Penetration depths in the ultraviolet for 4H, 6H and 3C silicon carbide at seven common laser pumping wavelengths von Sridhara, S.G, Eperjesi, T.J, Devaty, R.P, Choyke, W.J

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Nanoporous SiC: A Candidate Semi-Permeable Material for Biomedical Applications von Rosenbloom, A.J., Sipe, D.M., Shishkin, Y., Ke, Y., Devaty, R.P., Choyke, W.J.

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Step formation on hydrogen-etched 6H-SiC{0 0 0 1} surfaces von Nie, S., Lee, C.D., Feenstra, R.M., Ke, Y., Devaty, R.P., Choyke, W.J., Inoki, C.K., Kuan, T.S., Gu, Gong

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Near Bandedge Cathodoluminescence Studies of AlN Films: Dependence on MBE Growth Conditions von Shishkin, Y., Devaty, R.P., Choyke, W.J., Yun, F., King, T., Morkoç, H.

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Atomic structure of the m-plane AlN/SiC interface von Zhou, Lin, Ni, X., Özgür, Ü., Morkoç, H., Devaty, R.P., Choyke, W.J., Smith, David J.

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Impurity-controlled dopant activation: Hydrogen-determined site selection of boron in silicon carbide von Aradi, B., Deák, P., Son, N. T., Janzén, E., Choyke, W. J., Devaty, R. P.

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Electrical and optical properties of erbium-related centers in 6H silicon carbide von Klettke, O, Reshanov, S.A, Pensl, G, Shishkin, Y, Devaty, R.P, Choyke, W.J

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Progress in the study of optical and related properties of SiC since 1992 von Choyke, W.J., Devaty, R.P.

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Optical reflectivity of 3C and 4H-SiC polytypes : theory and experiment von LAMBRECHT, W. R. L, SEGALL, B, SUTTROP, W, YOGANATHAN, M, DEVATY, R. P, CHOYKE, W. J, EDMOND, J. A, POWELL, J. A, ALOUANI, M

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Neutral aluminum and gallium four particle complexes in silicon carbide polytypes von Devaty, R.P., Choyke, W.J., Sridhara, S.G., Clemen, L.L.

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Photoluminescence from carriers confined at an Al xGa 1− xAs/GaAs heterojunction interface von Bradshaw, J.L., Choyke, W.J., Devaty, R.P., Messham, R.L.

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Far infrared absorption by small bismuth particles von Sherriff, R.E., Devaty, R.P.

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Photoluminescence from carriers confined at an AlxGa1-xAs/GaAs heterojunction interface von BRADSHAW, J. L, CHOYKE, W. J, DEVATY, R. P, MESSHAM, R. L

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The influence of the Hall scattering factor on the determination of activation energies of the nitrogen donors in 4H-SiC epitaxial layers von Rutsch, G., Devaty, R.P., Chovke, W.J.

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Far Infrared Detection with a Si p-i Interface and Multilayer Structures von Perera, A.G.U., Choe, J.-W., Francombe, M.H., Sherriff, R.E., Devaty, R.P.

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Correlation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky Diodes von Dudley, Michael, Tabib-Azar, M., Raffaelle, R.P., Bailey, S.G., Schnabel, C.M., Neudeck, Philip G., Su, H.B.

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Pulsed Laser Deposition: A Novel Growth Technique for Wide-Bandgap Semiconductor Research von Scozzie, Charles, Lelis, Aivars J., Sharma, R.P., Venkatesan, T., Vispute, R.D., Zheleva, T.S., Ming, Bin, Patel, A., McLean, F. Barry, Jones, Kenneth A., Enck, R.

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