Step formation on hydrogen-etched 6H-SiC{0 0 0 1} surfaces von Nie, S., Lee, C.D., Feenstra, R.M., Ke, Y., Devaty, R.P., Choyke, W.J., Inoki, C.K., Kuan, T.S., Gu, Gong

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Photoelectrochemical etching of n-type 4H silicon carbide von Shishkin, Y., Choyke, W. J., Devaty, R. P.

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Comparative columnar porous etching studies on n-type 6H SiC crystalline faces von Ke, Y., Devaty, R. P., Choyke, W. J.

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Field effect in epitaxial graphene on a silicon carbide substrate von Gu, Gong, Nie, Shu, Feenstra, R. M., Devaty, R. P., Choyke, W. J., Chan, Winston K., Kane, Michael G.

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Band structure properties, phonons, and exciton fine structure in 4H-SiC measured by wavelength-modulated absorption and low-temperature photoluminescence von Klahold, W M, Choyke, W J, Devaty, R P

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Fabrication and morphology of porous p -type SiC von Shishkin, Y., Ke, Y., Devaty, R. P., Choyke, W. J.

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Determination of the electric field in 4H/3C/4H-SiC quantum wells due to spontaneous polarization in the 4H SiC matrix von Bai, S., Devaty, R. P., Choyke, W. J., Kaiser, U., Wagner, G., MacMillan, M. F.

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Penetration depths in the ultraviolet for 4H, 6H and 3C silicon carbide at seven common laser pumping wavelengths von Sridhara, S.G, Eperjesi, T.J, Devaty, R.P, Choyke, W.J

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Optical Characterization of Silicon Carbide Polytypes von Devaty, R. P., Choyke, W. J.

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Surface polishing by electrochemical etching of p-type 4H SiC von Ke, Y., Yan, F., Devaty, R. P., Choyke, W. J.

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Photoluminescence and transport studies of boron in 4H SiC von Sridhara, S. G., Clemen, L. L., Devaty, R. P., Choyke, W. J., Larkin, D. J., Kong, H. S., Troffer, T., Pensl, G.

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Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy von LEE, C. D, RAMACHANDRAN, V, DEVATY, R. P, SAGAR, A, FEENSTRA, R. M, GREVE, D. W, SARNEY, W. L, SALAMANCA-RIBA, L, LOOK, D. C, BAI, Song, CHOYKE, W. J

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Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC von Yan, F., Devaty, R. P., Choyke, W. J., Gali, A., Kimoto, T., Ohshima, T., Pensl, G.

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Porous Silicon Carbide as a Membrane for Implantable Biosensors von Ke, Yue, Choyke, Wolfgang J., Shishkin, Y., Rosenbloom, A.J., Devaty, Robert P., Sipe, D.M.

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Nitrogen donors and deep levels in high-quality 4H–SiC epilayers grown by chemical vapor deposition von Kimoto, T., Itoh, A., Matsunami, H., Sridhara, S., Clemen, L. L., Devaty, R. P., Choyke, W. J., Dalibor, T., Peppermüller, C., Pensl, G.

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Identification of the Carbon Dangling Bond Center at the 4H-SiC=SiO2 Interface by an EPR Study in Oxidized Porous SiC von Cantin, Jean-Louis, von Bardeleben, J., Shishkin, Y., Ke, Y., P. Devaty, R., J. Choyke, W.

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Absorption coefficient of 4H silicon carbide from 3900 to 3250 Å von Sridhara, S. G., Devaty, R. P., Choyke, W. J.

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Nanoporous SiC: a candidate semi-permeable material for biomedical applications von Rosenbloom, A J, Sipe, D M, Shishkin, Y, Ke, Y, Devaty, R P, Choyke, W J

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Effect of the Schottky barrier height on the detection of midgap levels in 4H-SiC by deep level transient spectroscopy von Reshanov, S. A., Pensl, G., Danno, K., Kimoto, T., Hishiki, S., Ohshima, T., Itoh, H., Yan, Fei, Devaty, R. P., Choyke, W. J.

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Anisotropy of the electron Hall mobility in 4H, 6H, and 15R silicon carbide von Schadt, M., Pensl, G., Devaty, R. P., Choyke, W. J., Stein, R., Stephani, D.

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