Band structure properties, phonons, and exciton fine structure in 4H-SiC measured by wavelength-modulated absorption and low-temperature photoluminescence von Klahold, W M, Choyke, W J, Devaty, R P

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Step formation on hydrogen-etched 6H-SiC{0 0 0 1} surfaces von Nie, S., Lee, C.D., Feenstra, R.M., Ke, Y., Devaty, R.P., Choyke, W.J., Inoki, C.K., Kuan, T.S., Gu, Gong

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Photoelectrochemical etching of n-type 4H silicon carbide von Shishkin, Y., Choyke, W. J., Devaty, R. P.

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Field effect in epitaxial graphene on a silicon carbide substrate von Gu, Gong, Nie, Shu, Feenstra, R. M., Devaty, R. P., Choyke, W. J., Chan, Winston K., Kane, Michael G.

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Comparative columnar porous etching studies on n-type 6H SiC crystalline faces von Ke, Y., Devaty, R. P., Choyke, W. J.

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Penetration depths in the ultraviolet for 4H, 6H and 3C silicon carbide at seven common laser pumping wavelengths von Sridhara, S.G, Eperjesi, T.J, Devaty, R.P, Choyke, W.J

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Fabrication and morphology of porous p -type SiC von Shishkin, Y., Ke, Y., Devaty, R. P., Choyke, W. J.

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Determination of the electric field in 4H/3C/4H-SiC quantum wells due to spontaneous polarization in the 4H SiC matrix von Bai, S., Devaty, R. P., Choyke, W. J., Kaiser, U., Wagner, G., MacMillan, M. F.

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Surface polishing by electrochemical etching of p-type 4H SiC von Ke, Y., Yan, F., Devaty, R. P., Choyke, W. J.

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Identification of the Carbon Dangling Bond Center at the 4H-SiC=SiO2 Interface by an EPR Study in Oxidized Porous SiC von Cantin, Jean-Louis, von Bardeleben, J., Shishkin, Y., Ke, Y., P. Devaty, R., J. Choyke, W.

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Optical Characterization of Silicon Carbide Polytypes von Devaty, R. P., Choyke, W. J.

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Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC von Yan, F., Devaty, R. P., Choyke, W. J., Gali, A., Kimoto, T., Ohshima, T., Pensl, G.

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Nanoporous SiC: a candidate semi-permeable material for biomedical applications von Rosenbloom, A J, Sipe, D M, Shishkin, Y, Ke, Y, Devaty, R P, Choyke, W J

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Photoluminescence and transport studies of boron in 4H SiC von Sridhara, S. G., Clemen, L. L., Devaty, R. P., Choyke, W. J., Larkin, D. J., Kong, H. S., Troffer, T., Pensl, G.

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Columnar Morphology of Porous Silicon Carbide as a Protein-Permeable Membrane for Biosensors and Other Applications von Ke, Yue, Choyke, Wolfgang J., Rosenbloom, A.J., Nie, S., Devaty, Robert P.

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Atomic structure of the m-plane AlN/SiC interface von Zhou, Lin, Ni, X., Özgür, Ü., Morkoç, H., Devaty, R.P., Choyke, W.J., Smith, David J.

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Ultra-Precision Machining of Stainless Steel and Nickel with Single Crystal 4H and 6H Boule SiC von Choyke, Wolfgang J., Yan, Fei, D'Urso, B., Devaty, Robert P.

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Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons von Ohshima, Takeshi, Reshanov, Sergey A., Beljakowa, Svetlana, Yan, Fei, Alfieri, Giovanni, Zippelius, Bernd, Choyke, Wolfgang J., Danno, Katsunori, Devaty, Robert P., Kimoto, Tsunenobu, Onoda, Shinobu, Pensl, Gerhard

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Elastic Waves in Nano-Columnar Porous 4H-SiC Measured by Brillouin Scattering von Choyke, Wolfgang J., Ke, Yue, Devaty, Robert P., Clouter, Maynard J.

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A Theoretical Study on Doping of Phosphorus in Chemical Vapor Deposited SiC Layers von Choyke, Wolfgang J., Gali, Adam, Devaty, Robert P., Hornos, T.

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