Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN o... von Li, Z., Waldron, J., Detchprohm, T., Wetzel, C., Karlicek, R. F., Chow, T. P.

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Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire von Li, Yufeng, You, Shi, Zhu, Mingwei, Zhao, Liang, Hou, Wenting, Detchprohm, T., Taniguchi, Y., Tamura, N., Tanaka, S., Wetzel, C.

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Thermal characterization of gallium nitride p-i-n diodes von Dallas, J., Pavlidis, G., Chatterjee, B., Lundh, J. S., Ji, M., Kim, J., Kao, T., Detchprohm, T., Dupuis, R. D., Shen, S., Graham, S., Choi, S.

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High temperature characteristics of monolithically integrated LED and MOS-channel HEMT in GaN using selective epi removal von Li, Z., Waldron, J., Chowdhury, S., Zhao, L., Detchprohm, T., Wetzel, C., Karlicek Jr, R. F., Chow, T. P.

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Carrier localization and nonradiative recombination in yellow emitting InGaN quantum wells von Li, T., Fischer, A. M., Wei, Q. Y., Ponce, F. A., Detchprohm, T., Wetzel, C.

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Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition von Lee, S. C., Youngblood, N., Jiang, Y. B., Peterson, E. J., Stark, C. J. M., Detchprohm, T., Wetzel, C., Brueck, S. R. J.

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Atomic-Scale Phase Transition of Epitaxial GaN on Nanostructured Si(001): Activation and Beyond von Lee, S. C, Jiang, Y.-B, Durniak, M. T, Detchprohm, T, Wetzel, C, Brueck, S. R. J

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Junction temperature, spectral shift, and efficiency in GaInN-based blue and green light emitting diodes von Senawiratne, J., Chatterjee, A., Detchprohm, T., Zhao, W., Li, Y., Zhu, M., Xia, Y., Li, X., Plawsky, J., Wetzel, C.

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Junction Temperature Measurements and Thermal Modeling of GaInN/GaN Quantum Well Light-Emitting Diodes von Senawiratne, J., Li, Y., Zhu, M., Xia, Y., Zhao, W., Detchprohm, T., Chatterjee, A., Plawsky, J.L., Wetzel, C.

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Growth and characterization of green GaInN-based light emitting diodes on free-standing non-polar GaN templates von Detchprohm, T., Zhu, M., Li, Y., Xia, Y., Liu, L., Hanser, D., Wetzel, C.

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Schottky barrier on n-type GaN grown by hydride vapor phase epitaxy von HACKE, P, DETCHPROHM, T, HIRAMATSU, K, SAWAKI, N

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Analysis of deep levels in n -type GaN by transient capacitance methods von Hacke, P., Detchprohm, T., Hiramatsu, K., Sawaki, N., Tadatomo, K., Miyake, K.

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Optical and structural properties of InGaN/GaN multiple quantum well structure grown by metalorganic chemical vapor deposition von Chen, Jeng-Hung, Feng, Zhe-Chuan, Tsai, Hung-Ling, Yang, Jer-Ren, Li, P., Wetzel, C., Detchprohm, T., Nelson, J.

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Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer von DETCHPROHM, T, HIRAMATSU, K, AMANO, H, AKASAKI, I

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Deep levels in the upper band-gap region of lightly Mg-doped GaN von Hacke, P., Nakayama, H., Detchprohm, T., Hiramatsu, K., Sawaki, N.

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Determination of the conduction band electron effective mass in hexagonal GaN von DRECHSLER, M, HOFMANN, D. M, MEYER, B. K, DETCHPROHM, T, AMANO, H, AKASAKI, I

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Dislocation analysis in homoepitaxial GaInN/GaN light emitting diode growth von Detchprohm, T., Xia, Y., Xi, Y., Zhu, M., Zhao, W., Li, Y., Schubert, E.F., Liu, L., Tsvetkov, D., Hanser, D., Wetzel, C.

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Light-emitting diode development on polar and non-polar GaN substrates von Wetzel, C., Zhu, M., Senawiratne, J., Detchprohm, T., Persans, P.D., Liu, L., Preble, E.A., Hanser, D.

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Characterization of GaInN/GaN layers for green emitting laser diodes von Wetzel, C., Li, Yufeng, Senawiratne, J., Zhu, Mingwei, Xia, Yong, Tomasulo, S., Persans, P.D., Liu, Lianghong, Hanser, D., Detchprohm, T.

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Improved performance of GaInN based deep green light emitting diodes through V-defect reduction von Detchprohm, T., Zhu, M., Xia, Y., Li, Y., Zhao, W., Senawiratne, J., Wetzel, C.

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