Reliability of high voltage/high power L/S-band Hbt technology von Lambert, B., Jonsson, G., Bataille, J., Ollivier, C., Mezenge, P., Derewonko, H., Thomas, H., Floriot, D., Blanck, H., Moreau, C.

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Evaluation of GaAs low noise and power MMIC technologies to neutron, ionizing dose and dose rate effects von Derewonko, H., Bosella, A., Pataut, G., Perie, D., Pinsard, J.L., Sentubery, C., Verbeck, C., Bressy, P., Augier, P.

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Design of TEGFET devices for optimum low-noise high-frequency operation von Jay, P.R., Derewonko, H., Adam, D., Briere, P., Delagebeaudeuf, D., Delescluse, P., Rochette, J.

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Evaluation of GaAs low noise and power MMIC technologies to neutron, ionizing dose and dose rate effects von Derewonko, H., Bosella, A., Pataut, G., Perie, D., Pinsard, J.L., Sentuberry, C., Verbeck, C., Bressy, P., Augier, P.

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