Topological and electrical properties of capped and annealed (0001) hydride vapor phase epitaxy GaN films on sapphire von Derenge, Michael A., Jones, Kenneth A.

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First formed dislocations in microcompressed c-oriented GaN micropillars and their subsequent interactions von Magagnosc, Daniel J., Derenge, Michael A., Jones, Kenneth A.

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The effect of carbon impurities on lightly doped MOCVD GaN Schottky diodes von Tompkins, Randy P., Walsh, Timothy A., Derenge, Michael A., Kirchner, Kevin W., Zhou, Shuai, Nguyen, Cuong B., Jones, Kenneth A., Suvarna, Puneet, Tungare, Mihir, Tripathi, Neeraj, Shahedipour-Sandvik, Fatemeh (Shadi)

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Annealing studies of AlN capped, MOCVD grown GaN films von Derenge, Michael A., Kirchner, Kevin W., Jones, Kenneth A., Suvarna, Puneet, Shahedipour-Sandvik, Shadi

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HVPE GaN for high power electronic Schottky diodes von Tompkins, Randy P., Walsh, Timothy A., Derenge, Michael A., Kirchner, Kevin W., Zhou, Shuai, Nguyen, Cuong B., Jones, Kenneth A., Mulholland, Gregory, Metzger, Robert, Leach, Jacob H., Suvarna, Puneet, Tungare, Mihir, Shahedipour-Sandvik, Fatemeh (Shadi)

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Topological and electrical properties of capped and annealed (0001) hydride vapor phase epitaxy GaN films on sapphire von Derenge, Michael A., Jones, Kenneth A.

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High-transparency Ni/Au bilayer contacts to n-type GaN von Motayed, Abhishek, Davydov, Albert V., Bendersky, Leonid A., Wood, Mark C., Derenge, Michael A., Wang, Dong Feng, Jones, Kenneth A., Mohammad, S. Noor

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Electrical, microstructural, and thermal stability characteristics of Ta/Ti/Ni/Au contacts to n-GaN von Motayed, Abhishek, Jones, Kenneth A., Derenge, Michael A., Wood, Mark C., Zakharov, D. N., Liliental-Weber, Z., Smith, David J., Davydov, Albert V., Anderson, Wallace T., Iliadis, Agis A., Noor Mohammad, S.

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Characteristics and Ionization Coefficient Extraction of 1kV 4H-SiC Implanted Anode PiN Rectifiers with Near Ideal Performance Fabricated Using AlN Capped Annealing von Scozzie, Charles, Chow, T. Paul, Zhu, Lin, Ervin, Matthew H., Derenge, Michael A., Venkatesan, T., Agarwal, Anant K., Vispute, R.D., Losee, Peter A., Jones, Kenneth A., Shah, Pankaj B.

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Mosaicity and Wafer Bending in SiC Wafers as Measured by Double and Triple Crystal X-Ray Rocking Curve and Peak Position Maps von Dudley, Michael, Powell, Adrian R., Derenge, Michael A., Jones, Kenneth A., Kirchner, K.W.

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Electrical characteristics of AlxGa1−xN Schottky diodes prepared by a two-step surface treatment von Motayed, Abhishek, Sharma, Ashok, Jones, Kenneth A., Derenge, Michael A., Iliadis, Agis A., Mohammad, S. Noor

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Achieving Low Doped (<10 16 ) GaN with Large Breakdown Voltages (~1000 V) von Tompkins, Randy P., Smith, J. R., Derenge, Michael A., Kirchner, Kevin W., Zhou, Shuai, Jones, Kenneth A., Metzger, R., Leach, Jacob, Suvana, Puneet, Tungare, Mihir, Shahedipou-Sandvik, Fatemeh

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GaN Power Schottky Diodes von Tompkins, Randy P., Smith, Joshua R., Zhou, Shuai, Kirchner, Kevin W., Derenge, Michael A., Jones, Kenneth A., Leach, Jacob H., Mulholland, Greg, Udwary, Kevin, Preble, Edward, Suvarna, Puneet, Tungare, Mihir, Shahedipour-Sandvik, F.

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Observation of Thermal-Annealing Evolution of Defects in Ion-Implanted 4H-SiC by Luminsescence von Freitas, Jaime A., Derenge, Michael A., Jones, Kenneth A., Hullavarad, Shiva S., Vispute, R.D.

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METHODOLOGY FOR ANNEALING GROUP III-NITRIDE SEMICONDUCTOR DEVICE STRUCTURES USING NOVEL WEIGHTED COVER SYSTEMS von DERENGE MICHAEL A

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P-Conductivity in Co-Implanted and Gyrotron Microwave-Annealed GaN: Optical and Electrical Studies von Meyers, Vincent, Rocco, Emma, Hogan, Kasey, McEwen, Benjamin, Derenge, Michael A., Jones, Kenneth A., Shevelev, Mike, Sklyar, Vlad, Shahedipour-Sandvik, F. Shadi

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Comparison of Graphite and BN/AlN Annealing Caps for Ion Implanted SiC von Derenge, Michael A., Hullavarad, Shiva S., Zheleva, T.S., Kirchner, K.W., Vispute, R.D., Dhar, S., Jones, Kenneth A., Sudarshan, Tangali S., Wood, M.C., Bolonikov, A.

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1kV 4H-SiC JBS Rectifiers Fabricated Using an AlN Capped Anneal von Chow, T. Paul, Zhu, Lin, Ervin, Matthew H., Derenge, Michael A., Venkatesan, T., Agarwal, Anant K., Shanbhag, Mayura, Vispute, R.D., Jones, Kenneth A., Shah, Pankaj B.

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Variations in the Effects of Implanting Al at Different Concentrations into SiC von Freitas, Jaime A., Derenge, Michael A., Hullavarad, Shiva S., Zheleva, T.S., Vispute, R.D., Dar, S., Jones, Kenneth A., Gerardi, G.J., Shah, Pankaj B.

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Structural Defects Formed in Al-Implanted and Annealed 4H-SiC von Ervin, Matthew H., Derenge, Michael A., Jones, Kenneth A., Zheleva, T.S., Vispute, R.D., Kulkarni, V.N.

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