Characterization of n-Ge/i-Ge/p-Si PIN photo-diode von Deok Yang, Hyeon, Kil, Yeon-Ho, Yang, Jong-Han, Kang, Sukill, Soo Jeong, Tae, Choi, Chel-Jong, Sung Kim, Taek, Shim, Kyu-Hwan

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Fabrication of PIN photo-diode from p-Ge/i-Ge/n-Si hetero junction structure von Deok Yang, Hyeon, Kil, Yeon-Ho, Yang, Jong-Han, Kang, Sukill, Soo Jeong, Tae, Choi, Chel-Jong, Sung Kim, Taek, Shim, Kyu-Hwan

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Characterization of reduced pressure chemical vapor deposited Si0.8Ge0.2/Si multi-layers von Shim, Kyu-Hwan, Deok Yang, Hyeon, Kil, Yeon-Ho, Yang, Jong-Han, Hong, Woong-Ki, Kim, Jeong-Jin, Kang, Sukill, Soo Jeong, Tae, Sung Kim, Taek

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Characterization of n-type Ge layers on Si (100) substrates grown by rapid thermal chemical vapor deposition von Kil, Yeon-Ho, Yang, Hyeon Deok, Yang, Jong-Han, Park, Ah Hyun, Kang, Sukill, Jeong, Tae Soo, Kim, Taek Sung, Shim, Kyu-Hwan

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Optical properties of hybrid Si1−xGex/Si quantum dot/quantum well structures grown on Si by RPCVD von Kil, Yeon-Ho, Yang, Hyeon Deok, Yang, Jong-Han, Kang, Sukill, Jeong, Tae Soo, Choi, Chel-Jong, Kim, Taek Sung, Shim, Kyu-Hwan

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Nanoscale dry etching of germanium by using inductively coupled CF4 plasma von Shim, Kyu-Hwan, Yang, Ha Yong, Kil, Yeon-Ho, Yang, Hyeon Deok, Yang, Jong-Han, Hong, Woong-Ki, Kang, Sukill, Jeong, Tae Soo, Kim, Taek Sung

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Growth and Characterization of Si1-xGex QDs on Si/Si0.8Ge0.2 Layer von 김택성, 길연호, Hyeon Deok Yang, Jong-Han Yang, Woong-Ki Hong, Sukill Kang, Tae Soo Jeong, Kyu-Hwan Shim

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Optical properties of hybrid Si1−Ge /Si quantum dot/quantum well structures grown on Si by RPCVD von Kil, Yeon-Ho, Yang, Hyeon Deok, Yang, Jong-Han, Kang, Sukill, Jeong, Tae Soo, Choi, Chel-Jong, Kim, Taek Sung, Shim, Kyu-Hwan

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Electroluminescence of n-Ge/i-Ge/p-Si Hetero Junction PIN LEDs von Kim, Taek Sung, Kil, Yeon-Ho, Yang, Hyeon Deok, Yang, Jong-Han, Kim, Joung Hee, Jeong, Joo Yong, Kang, Sukill, Jeong, Tae Soo, Choi, Chel-Jong, Shim, Kyu-Hwan

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Optical Characterization of Ge-on-Si Grown by using RTCVD von Kim, Taek Sung, Kil, Yeon-Ho, Hong, Woong-Ki, Yang, Hyeon Deok, Kang, Sukill, Jeong, Tae Soo, Shim, Kyu-Hwan

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Effect of phosphorus doping concentration on n-type Ge layer growth von Kil, Yeon-Ho, Yang, Hyeon Deok, Yang, Jong-Han, Kang, Sukill, Jeong, Tae Soo, Choi, Chel-Jong, Kim, Taek Sung, Shim, Kyu-Hwan, Kim, Dae-Jung

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Doping-concentration dependence of a boron-doped p-type Ge layer grown on a Si (100) substrates by using RTCVD von Kil, Yeon-Ho, Yang, Hyeon Deok, Yang, Jong-Han, Kang, Sukill, Jeong, Tae Soo, Choi, Chel-Jong, Kim, Taek Sung, Shim, Kyu-Hwan, Kim, Dae-Jung

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Optical characterization of tensile-strained a p-type Ge layer on a Si (100) substrate von Kil, Yeon-Ho, Yang, Hyeon Deok, Yang, Jong-Han, Kim, Joung Hee, Jung, Joo Young, Kang, Sukill, Jeong, Tae Soo, Kim, Taek Sung, Shim, Kyu-Hwan

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Growth and characterization of Si1−x Getx QDs on Si/Si0.8Ge0.2 layer von Kim, Taek Sung, Kil, Yeon-Ho, Yang, Hyeon Deok, Yang, Jong-Han, Hong, Woong-Ki, Kang, Sukill, Jeong, Tae Soo, Shim, Kyu-Hwan

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Growth and characterization of Si1−xGetx QDs on Si/Si0.8Ge0.2 layer von Kim, Taek Sung, Kil, Yeon-Ho, Yang, Hyeon Deok, Yang, Jong-Han, Hong, Woong-Ki, Kang, Sukill, Jeong, Tae Soo, Shim, Kyu-Hwan

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Optical Characterization of Ge-on-Si Grown by using RTCVD von Kim, Taek Sung, Kil, Yeon-Ho, Hong, Woong-Ki, Yang, Hyeon Deok, Kang, Sukill, Jeong, Tae Soo, Shim, Kyu-Hwan

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Electroluminescence of n-Ge/i-Ge/p-Si Hetero Junction PIN LEDs von Kim, Taek Sung, Kil, Yeon-Ho, Yang, Hyeon Deok, Yang, Jong-Han, Kim, Joung Hee, Jeong, Joo Yong, Kang, Sukill, Jeong, Tae Soo, Choi, Chel-Jong, Shim, Kyu-Hwan

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Optical Property of Si 0.8 Ge 0.2 /Si Multilayer Grown by Using RPCVD von Kim, Taek Sung, Shin, Mi Im, Kil, Yeon-Ho, Lee, Hun Ki, Yang, Hyeon Deok, Jeong, Tae Soo, Kang, Sukil, Choi, Chel-Jong, Shim, Kyu-Hwan

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RFID CLOUD COMPUTING PLATFORM SYSTEM BASED ON TABLET PC von YANG, HYEON DEOK, EYM, SANG SU

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