V-shaped pits in HVPE-grown GaN associated with columnar inversion domains originating from foreign particles of α-Si3N4 and graphitic carbon von Matsubara, Tohoru, Denpo, Yusho, Okada, Narihito, Tadatomo, Kazuyuki

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Effect of superlattice on light output power of InGaN-based light-emitting diodes fabricated on underlying GaN substrates with different dislocation densities von Sugimoto, Kohei, Denpo, Yusho, Okada, Narihito, Tadatomo, Kazuyuki

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V-shaped pits in HVPE-grown GaN associated with columnar inversion domains originating from foreign particles of α-Si 3 N 4 and graphitic carbon von Matsubara, Tohoru, Denpo, Yusho, Okada, Narihito, Tadatomo, Kazuyuki

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Fe dope GaN growth hydride Vapor Phase Epitaxy von Denpo, Yusho, Nishihira, Takanori, Yamane, Keisuke, Okada, Narihito, Kuzuhara, Masaaki, Tadatomo, Kazuyuki

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Fabrication of InGaN based LED structure using freestanding {20-21}GaN substrate von Denpo, Yusho, Mitsui, Yusuke, Yamane, Keisuke, Okada, Narihito, Tadatomo, Kazuyuki

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ハイドライド気相成長法を用いたFe ドープGaNの成長 von 傳寶, 裕晶, 西平, 貴則, 山根, 啓輔, 岡田, 成仁, 葛原, 正明, 只友, 一行

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自立{20-21}GaN基板を用いたInGaN系LED構造の作製 von 傳寶, 裕晶, 光井, 勇祐, 山根, 啓輔, 岡田, 成仁, 只友, 一行

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