Nuclear envelope rupture and repair during cancer cell migration von Denais, Celine M., Gilbert, Rachel M., Isermann, Philipp, McGregor, Alexandra L., te Lindert, Mariska, Weigelin, Bettina, Davidson, Patricia M., Friedl, Peter, Wolf, Katarina, Lammerding, Jan

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NBTI degradation: From physical mechanisms to modelling von Huard, V., Denais, M., Parthasarathy, C.

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A thorough investigation of MOSFETs NBTI degradation von Huard, V., Denais, M., Perrier, F., Revil, N., Parthasarathy, C., Bravaix, A., Vincent, E.

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Designing in reliability in advanced CMOS technologies von Parthasarathy, C.R., Denais, M., Huard, V., Ribes, G., Roy, D., Guerin, C., Perrier, F., Vincent, E., Bravaix, A.

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New Insights into Recovery Characteristics Post NBTI Stress von Parthasarathy, Cr, Denais, M, Huard, V., Ribes, G., Vincent, E., Bravaix, A.

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Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs von Bravaix, A., Goguenheim, D., Denais, M., Huard, V., Parthasarathy, C., Perrier, F., Revil, N., Vincent, E.

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Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown von Ribes, G., Bruyère, S., Denais, M., Roy, D., Ghibaudo, G.

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Multi-vibrational hydrogen release: Physical origin of Tbd,Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides von Ribes, G., Bruyère, S., Denais, M., Monsieur, F., Huard, V., Roy, D., Ghibaudo, G.

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Single-hole detrapping events in pMOSFETs NBTI degradation von Huard, V., Parthasarathy, C.R., Denais, M.

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Les poésies de Germain Colin-Bucher, Angevin, secrétaire du grand-maître de Malte : un émule de Clément Marot / publiées pour la première fois, avec notice, notes, tables et glossa... von Colin-Bucher, Germain (15..-1545?). Auteur du texte

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New perspectives on NBTI in advanced technologies: modelling & characterization von Denais, M., Huard, V., Parthasarathy, C., Ribes, G., Perrier, F., Roy, D., Bravaix, A.

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On-the-fly characterization of NBTI in ultra-thin gate oxide PMOSFET's von Denais, M., Parthasarathy, C., Ribes, G., Rey-Tauriac, Y., Revil, N., Bravaix, A., Huard, V., Perrier, F.

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Breakdown mechanisms in ultra-thin oxides: impact of carrier energy and current through substrate hot carrier stress study von Ribes, G, Bruyère, S, Denais, M, Monsieur, F, Huard, V, Roy, D, Ghibaudo, G

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65 nm LP/GP mix low cost platform for multi-media wireless and consumer applications von Tavel, B., Duriez, B., Gwoziecki, R., Basso, M.T., Julien, C., Ortolland, C., Laplanche, Y., Fox, R., Sabouret, E., Detcheverry, C., Boeuf, F., Morin, P., Barge, D., Bidaud, M., Biénacel, J., Garnier, P., Cooper, K., Chapon, J.D., Trouiller, Y., Belledent, J., Broekaart, M., Gouraud, P., Denais, M., Huard, V., Rochereau, K., Difrenza, R., Planes, N., Marin, M., Boret, S., Gloria, D., Vanbergue, S., Abramowitz, P., Vishnubhotla, L., Reber, D., Stolk, P., Woo, M., Arnaud, F.

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Modelling charge to breakdown using hydrogen multivibrational excitation (thin SiO/sub 2/ and high-k dielectrics) [MOS devices] von Ribes, G., Bruyere, S., Denais, M., Roy, D., Ghibaudo, G.

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Characterization and modeling NBTI for design-in reliability von Parthasarathy, C.R., Denais, M., Huard, V., Ribes, G., Vincent, E., Bravaix, A.

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Hydrogen release and defect generation rate in ultra-thin oxides [MOSFET devices] von Huard, V., Denais, M., Monsieur, F.

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MVHR (multi-vibrational hydrogen release): consistency with bias temperature instability and dielectrics breakdown [MOS devices] von Ribes, G., Bruyere, S., Denais, M., Roy, D., Ghibaudo, G.

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High-k dielectrics breakdown accurate lifetime assessment methodology von Ribes, G., Bruyere, S., Denais, M., Monsieur, F., Roy, D., Vincent, E., Ghibaudo

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Combined effect of NBTI and channel hot carrier effects in pMOSFETs von Guerin, C., Huard, V., Bravaix, A., Denais, M., Roux, J.M., Perrier, F., Baks, W.

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