AlGaN/GaN high electron mobility transistors with InGaN back-barriers von Palacios, T., Chakraborty, A., Heikman, S., Keller, S., DenBaars, S.P., Mishra, U.K.

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High-power AlGaN/GaN HEMTs for Ka-band applications von Palacios, T., Chakraborty, A., Rajan, S., Poblenz, C., Keller, S., DenBaars, S.P., Speck, J.S., Mishra, U.K.

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Tamm plasmons in metal/nanoporous GaN distributed Bragg reflector cavities for active and passive optoelectronics von Lheureux, G., Monavarian, M., Anderson, R., Decrescent, R. A., Bellessa, J., Symonds, C., Schuller, J. A., Speck, J. S., Nakamura, S., DenBaars, S. P.

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Germicidal ultraviolet LEDs: a review of applications and semiconductor technologies von Zollner, Christian J, DenBaars, S P, Speck, J S, Nakamura, S

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Impact of crystal orientation on the modulation bandwidth of InGaN/GaN light-emitting diodes von Monavarian, M., Rashidi, A., Aragon, A. A., Oh, S. H., Rishinaramangalam, A. K., DenBaars, S. P., Feezell, D.

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High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates von Dora, Y., Chakraborty, A., McCarthy, L., Keller, S., DenBaars, S.P., Mishra, U.K.

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Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices von Farrell, R M, Young, E C, Wu, F, DenBaars, S P, Speck, J S

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Impact of doped barriers on the recombination coefficients of c-plane InGaN/GaN single quantum well light-emitting diodes von Chow, Y. C., Lynsky, C., Nakamura, S., DenBaars, S. P., Weisbuch, C., Speck, J. S.

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Reduction of efficiency droop in c-plane InGaN/GaN light-emitting diodes using a thick single quantum well with doped barriers von Chow, Y. C., Lynsky, C., Wu, F., Nakamura, S., DenBaars, S. P., Weisbuch, C., Speck, J. S.

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Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition von Fichtenbaum, N.A., Mates, T.E., Keller, S., DenBaars, S.P., Mishra, U.K.

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Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening von Fujii, T., Gao, Y., Sharma, R., Hu, E. L., DenBaars, S. P., Nakamura, S.

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Low-efficiency-droop c-plane InGaN/GaN light-emitting diodes through the use of thick single quantum wells and doped barriers von Chow, Y. C., Lynsky, C., Nakamura, S., DenBaars, S. P., Weisbuch, C., Speck, J. S.

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High-performance E-mode AlGaN/GaN HEMTs von Palacios, T., Suh, C.-S., Chakraborty, A., Keller, S., DenBaars, S.P., Mishra, U.K.

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Impact of carrier localization on radiative recombination times in semipolar (202¯1) plane InGaN/GaN quantum wells von Ivanov, R., Marcinkevičius, S., Zhao, Y., Becerra, D. L., Nakamura, S., DenBaars, S. P., Speck, J. S.

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Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (202¯1¯) GaN substrates von Pourhashemi, A., Farrell, R. M., Hardy, M. T., Hsu, P. S., Kelchner, K. M., Speck, J. S., DenBaars, S. P., Nakamura, S.

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High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells von Gelžinytė, K., Ivanov, R., Marcinkevičius, S., Zhao, Y., Becerra, D. L., Nakamura, S., DenBaars, S. P., Speck, J. S.

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Highly polarized photoluminescence and its dynamics in semipolar (202¯1¯) InGaN/GaN quantum well von Marcinkevičius, S., Ivanov, R., Zhao, Y., Nakamura, S., DenBaars, S. P., Speck, J. S.

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Growth modification via indium surfactant for InGaN/GaN green LED von Md Taib, M Ikram, Ahmad, M A, Alias, E A, Alhassan, A I, Ajia, I A, Muhammed, M M, Roqan, I S, DenBaars, S P, Speck, J S, Nakamura, S, Zainal, N

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AlGaN/AlN/GaN high-power microwave HEMT von Shen, L., Heikman, S., Moran, B., Coffie, R., Zhang, N.-Q., Buttari, D., Smorchkova, I.P., Keller, S., DenBaars, S.P., Mishra, U.K.

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Temperature dependence of exciton-surface plasmon polariton coupling in Ag, Au, and Al films on InxGa1−xN/GaN quantum wells studied with time-resolved cathodoluminescence von Estrin, Y., Rich, D. H., Keller, S., DenBaars, S. P.

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