Reconfigurable Complementary and Combinational Logic Based on Monolithic and Single‐Crystalline Al‐Si Heterostructures von Böckle, Raphael, Sistani, Masiar, Bažíková, Martina, Wind, Lukas, Sadre‐Momtaz, Zahra, den Hertog, Martien I., Murphey, Corban G. E., Cahoon, James F., Weber, Walter M.

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Highly uniform zinc blende GaAs nanowires on Si(111) using a controlled chemical oxide template von Tan, Siew Li, Genuist, Yann, den Hertog, Martien I, Bellet-Amalric, Edith, Mariette, Henri, Pelekanos, Nikos T

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Control of Gold Surface Diffusion on Si Nanowires von den Hertog, Martien I, Rouviere, Jean-Luc, Dhalluin, Florian, Desré, Pierre J, Gentile, Pascal, Ferret, Pierre, Oehler, Fabrice, Baron, Thiery

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Mapping Active Dopants in Single Silicon Nanowires Using Off-Axis Electron Holography von den Hertog, Martien I, Schmid, Heinz, Cooper, David, Rouviere, Jean-Luc, Björk, Mikael T, Riel, Heike, Rivallin, Pierrette, Karg, Siegfried, Riess, Walter

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Nanometer-Scale Ge-Based Adaptable Transistors Providing Programmable Negative Differential Resistance Enabling Multivalued Logic von Sistani, Masiar, Böckle, Raphael, Falkensteiner, David, Luong, Minh Anh, den Hertog, Martien I, Lugstein, Alois, Weber, Walter M

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Near-Infrared Intersubband Photodetection in GaN/AlN Nanowires von Lähnemann, Jonas, Ajay, Akhil, Den Hertog, Martien I, Monroy, Eva

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Correlated Electro-Optical and Structural Study of Electrically Tunable Nanowire Quantum Dot Emitters von Spies, Maria, Ajay, Akhil, Monroy, Eva, Gayral, Bruno, den Hertog, Martien I

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The influence of illumination conditions in the measurement of built-in electric field at p–n junctions by 4D-STEM von da Silva, Bruno C., Momtaz, Zahra S., Bruas, Lucas, Rouviére, Jean-Luc, Okuno, Hanako, Cooper, David, den-Hertog, Martien I.

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Bias-Controlled Spectral Response in GaN/AlN Single-Nanowire Ultraviolet Photodetectors von Spies, Maria, den Hertog, Martien I, Hille, Pascal, Schörmann, Jörg, Polaczyński, Jakub, Gayral, Bruno, Eickhoff, Martin, Monroy, Eva, Lähnemann, Jonas

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Understanding the Electronic Transport of Al–Si and Al–Ge Nanojunctions by Exploiting Temperature-Dependent Bias Spectroscopy von Behrle, Raphael, Murphey, Corban G. E., Cahoon, James F., Barth, Sven, den Hertog, Martien I., Weber, Walter M., Sistani, Masiar

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Thermally propagated Al contacts on SiGe nanowires characterized by electron beam induced current in a scanning transmission electron microscope von Conlan, Aidan P, Luong, Minh Anh, Gentile, Pascal, Moldovan, Grigore, Den Hertog, Martien I, Monroy, Eva, Cooper, David

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Al–Ge–Al Nanowire Heterostructure: From Single‐Hole Quantum Dot to Josephson Effect von Delaforce, Jovian, Sistani, Masiar, Kramer, Roman B. G., Luong, Minh A., Roch, Nicolas, Weber, Walter M., den Hertog, Martien I., Robin, Eric, Naud, Cecile, Lugstein, Alois, Buisson, Olivier

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Effect of the nanowire diameter on the linearity of the response of GaN-based heterostructured nanowire photodetectors von Spies, Maria, Polaczy ski, Jakub, Ajay, Akhil, Kalita, Dipankar, Luong, Minh Anh, Lähnemann, Jonas, Gayral, Bruno, den Hertog, Martien I, Monroy, Eva

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Highly Transparent Contacts to the 1D Hole Gas in Ultrascaled Ge/Si Core/Shell Nanowires von Sistani, Masiar, Delaforce, Jovian, Kramer, Roman B. G, Roch, Nicolas, Luong, Minh Anh, den Hertog, Martien I, Robin, Eric, Smoliner, Jürgen, Yao, Jun, Lieber, Charles M, Naud, Cecile, Lugstein, Alois, Buisson, Olivier

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Stimulated Raman Scattering in Ge Nanowires von Sistani, Masiar, Bartmann, Maximilian G, Güsken, Nicholas A, Oulton, Rupert F, Keshmiri, Hamid, Luong, Minh Anh, Robin, Eric, den Hertog, Martien I, Lugstein, Alois

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Design of AlGaN/AlN Dot‐in‐a‐Wire Heterostructures for Electron‐Pumped UV Emitters von Dimkou, Ioanna, Harikumar, Anjali, Ajay, Akhil, Donatini, Fabrice, Bellet-Amalric, Edith, Grenier, Adeline, den Hertog, Martien I., Purcell, Stephen T., Monroy, Eva

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Plasmon-Driven Hot Electron Transfer at Atomically Sharp Metal–Semiconductor Nanojunctions von Sistani, Masiar, Bartmann, Maximilian G, Güsken, Nicholas A, Oulton, Rupert F, Keshmiri, Hamid, Luong, Minh Anh, Momtaz, Zahra Sadre, Den Hertog, Martien I, Lugstein, Alois

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Intersubband absorption in Si‐ and Ge‐doped GaN/AlN heterostructures in self‐assembled nanowire and 2D layers von Ajay, Akhil, Lim, Caroline B., Browne, David A., Polaczynski, Jakub, Bellet‐Amalric, Edith, den Hertog, Martien I., Monroy, Eva

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Nanoscale Reconfigurable Si Transistors: From Wires to Sheets and Unto Multi‐Wire Channels von Wind, Lukas, Behrle, Raphael, den Hertog, Martien I., Murphey, Corban G. E., Cahoon, James F., Sistani, Masiar, Weber, Walter M.

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Towards Quantitative analysis of electrostatic potential of monolayer WSe2 using electron ptychography von Lu, Yiran, Wartelle, Alexis, Dosenovic, Djodje, Bryan, Matthew, Okuno, Hanako, da Silva, Julio-Cesar, Rouvière, Jean-Luc, den Hertog, Martien I.

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