Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In-Ga-Zn-O system von Iwasaki, Tatsuya, Itagaki, Naho, Den, Tohru, Kumomi, Hideya, Nomura, Kenji, Kamiya, Toshio, Hosono, Hideo

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Multiwalled carbon nanotubes growth in anodic alumina nanoholes von Iwasaki, Tatsuya, Motoi, Taiko, Den, Tohru

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Nanowire array fabricated by Al–Ge phase separation von Fukutani, Kazuhiko, Ishida, Youhei, Tanji, Koichi, Den, Tohru

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Phase-separated Al-Si thin films von Fukutani, Kazuhiko, Tanji, Koichi, Saito, Tatsuya, Den, Tohru

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High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering von Yabuta, Hisato, Sano, Masafumi, Abe, Katsumi, Aiba, Toshiaki, Den, Tohru, Kumomi, Hideya, Nomura, Kenji, Kamiya, Toshio, Hosono, Hideo

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Development of Phase-Separated Scintillators with Light-Guiding Properties von Yasui, Nobuhiro, Ohashi, Yoshihiro, Kobayashi, Tamaki, Den, Tohru

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Characterization of high-density patterned media fabricated by a new anodizing process von Yasui, Nobuhiro, Ichihara, Sigeru, Nakamura, Takashi, Imada, Aya, Saito, Tatsuya, Ohashi, Yoshihiro, Den, Tohru, Miura, Kenji, Muraoka, Hiroaki

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Characterization of nanoporous Si thin films obtained by Al–Si phase separation von Fukutani, Kazuhiko, Ishida, Youhei, Aiba, Toshiaki, Miyata, Hirokatsu, Den, Tohru

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Preparation and properties of YSr2Cu3− xMxOy ( M = Li, Al, Ti, V, Cr, Fe, Co, Ga, Ge, Mo, WandRe) von Den, Tohru, Kobayashi, Tamaki

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Ultrahigh pore density nanoporous films produced by the phase separation of eutectic al-si for template-assisted growth of nanowire arrays von Fukutani, Kazuhiko, Tanji, Koichi, Motoi, Taiko, Den, Tohru

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Fabrication of Bi Nanowire Array into Nanoporous Film Made from Phase-Separated Al–Si Film von Fukutani, Kazuhiko, Den, Tohru

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Substrate bias effect on Al–Si and Al–Ge thin film structure von Horie, Ryoko, Yasui, Nobuhiro, Ohashi, Yoshihiro, Den, Tohru

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Well-Aligned Nanocylinder Formation in Phase-Separated Metal-Silicide-Silicon and Metal-Germanide-Germanium Systems von Yasui, N., Horie, R., Ohashi, Y., Tanji, K., Den, T.

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Superconductivity in the Bi2Sr3-xLnxCu2Oy system and the excess of hole concentration in Bi2Sr2CanCu1+nOy (n=0 and 1) von DEN, T, AKIMITSU, J

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Characterization of nanoporous Si thin films obtained by Al-Siphase separation von Fukutani, Kazuhiko, Ishida, Youhei, Aiba, Toshiaki, Miyata, Hirokatsu, Den, Tohru

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Fabrication of Well-Aligned Al Nanowire Array Embedded in Si Matrix Using Limited Spinodal Decompositon von Fukutani, Kazuhiko, Tanji, Koichi, Saito, Tatsuya, Den, Tohru

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Characterization of high-density patterned media fabricatedby a new anodizing process von Yasui, Nobuhiro, Ichihara, Sigeru, Nakamura, Takashi, Imada, Aya, Saito, Tatsuya, Ohashi, Yoshihiro, Den, Tohru, Miura, Kenji, Muraoka, Hiroaki

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A New Superconductor with T c =47 K in the Bi-Sr-Cu-O System (Nominal Composition=Bi 4 Sr 8+x Cu 5-x O y ) von Tohru Den, Tohru Den, Toshiaki Aiba, Toshiaki Aiba

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Electrodeposition of FePt magnetic material and embedding into alumina-nanoholes von Ichihara, S., Ueda, M., Den, T.

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The superconductivity in the Bi-Sr-Ln-Cu-O system (Ln=Pr, Nd and La) von DEN, T, YAMAZAKI, A, AKIMITSU, J

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