An improved carrier rate model to evaluate internal quantum efficiency and analyze efficiency droop origin of InGaN based light-emitting diodes von Wang, Jiaxing, Wang, Lai, Wang, Lei, Hao, Zhibiao, Luo, Yi, Dempewolf, Anja, Müller, Mathias, Bertram, Frank, Christen, Jürgen

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Growth and stacking fault reduction in semi-polar GaN films on planar Si(112) and Si(113) von Ravash, Roghaiyeh, Veit, Peter, Müller, Mathias, Schmidt, Gordon, Dempewolf, Anja, Hempel, Thomas, Bläsing, Jürgen, Bertram, Frank, Dadgar, Armin, Christen, Jürgen, Krost, Alois

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Highly reflective and conductive AlInN/GaN distributed Bragg reflectors realized by Ge-doping von Seneza, Cleophace, Berger, Christoph, Sana, Prabha, Witte, Harmut, Bläsing, Jürgen, Dempewolf, Anja, Dadgar, Armin, Christen, Jürgen, Strittmatter, André

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MOVPE growth of semi-polar GaN light-emitting diode structures on planar Si(112) and Si(113) substrates von Ravash, Roghaiyeh, Dadgar, Armin, Bertram, Frank, Dempewolf, Anja, Metzner, Sebastian, Hempel, Thomas, Christen, Jürgen, Krost, Alois

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Anti-phase domains in cubic GaN von Maria Kemper, Ricarda, Schupp, Thorsten, Häberlen, Maik, Niendorf, Thomas, Maier, Hans-Jürgen, Dempewolf, Anja, Bertram, Frank, Christen, Jürgen, Kirste, Ronny, Hoffmann, Axel, Lindner, Jörg, Josef As, Donat

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