The growth rate evolution versus substrate temperature and V/III ratio during GaN MBE using ammonia von Alexeev, A N, Borisov, B A, Chaly, V P, Demidov, D M, Dudin, A L, Krasovitsky, D M, Pogorelsky, Yu V, Shkurko, A P, Sokolov, I A, Stepanov, M V, Ter-Martirosyan, A L

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Use of molecular beam epitaxy for high-power AlGaAs laser production von Chaly, V.P., Demidov, D.M., Fokin, G.A., Karpov, S.Yu, Myachin, V.E., Pogorelsky, Yu.V., Rusanovich, I.Yu, Shkurko, A.P., Ter-Martirosyan, A.L.

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INJECTION SEMICONDUCTOR LASER von SHKURKO A.P, CHALYJ V.P, DEMIDOV D.M, TER-MARTIROSJAN A.L

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METHOD OF PREPARING EPITAXIAL STRUCTURES OF NITRIDES OF A GROUP ELEMENTS von SOKOLOV I.A, KARPOV S.JU, CHALYJ V.P, DEMIDOV D.M, TER-MARTIROSJAN A.L, POGOREL'SKIJ JU.V

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Rainfall-runoff modelling of the Ouse basin, North Yorkshire: an application of a physically based distributed model von Kuchment, L.S., Demidov, V.N., Naden, P.S., Cooper, D.M., Broadhurst, P.

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