Silicides and germanides for nano-CMOS applications von Kittl, J.A., Opsomer, K., Torregiani, C., Demeurisse, C., Mertens, S., Brunco, D.P., Van Dal, M.J.H., Lauwers, A.

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Work function of Ni silicide phases on HfSiON and SiO2 : NiSi, Ni2Si, Ni31Si12, and Ni3Si fully silicided gates von KITTL, J. A, PAWLAK, M. A, ABSIL, P, MAEX, K, BIESEMANS, S, LAUWERS, A, DEMEURISSE, C, OPSOMER, K, ANIL, K. G, VRANCKEN, C, VAN DAL, M. J. H, VELOSO, A, KUBICEK, S

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Silicides for the 100-nm node and beyond: Co-silicide, Co(Ni)-silicide and Ni-silicide von Lauwers, A, de Potter, M, Chamirian, O, Lindsay, R, Demeurisse, C, Vrancken, C, Maex, K

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Thermal stability of NiPt- and Pt-silicide contacts on SiGe source/drain von Demeurisse, C., Verheyen, P., Opsomer, K., Vrancken, C., Absil, P., Lauwers, A.

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Low-temperature diffusion of high-concentration phosphorus in silicon, a preferential movement toward the surface von Duffy, R., Venezia, V. C., Loo, J., Hopstaken, M. J. P., Verheijen, M. A., van Berkum, J. G. M., Maas, G. C. J., Tamminga, Y., Dao, T., Demeurisse, C.

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Linewidth effect and phase control in Ni fully silicided gates von Kittl, J.A., Lauwers, A., Hoffmann, T., Veloso, A., Kubicek, S., Niwa, M., van Dal, M.J.H., Pawlak, M.A., Demeurisse, C., Vrancken, C., Brijs, B., Absil, P., Biesemans, S.

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Transient and end silicide phase formation in thin film Ni/polycrystalline-Si reactions for fully silicided gate applications von Kittl, J. A., Pawlak, M. A., Torregiani, C., Lauwers, A., Demeurisse, C., Vrancken, C., Absil, P. P., Biesemans, S., Coia, C., Detavernier, C., Jordan-Sweet, J., Lavoie, C.

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Kinetics of Ni3Si2 formation in the Ni2Si–NiSi thin film reaction from in situ measurements von Kittl, J. A., Pawlak, M. A., Torregiani, C., Lauwers, A., Demeurisse, C., Vrancken, C., Absil, P. P., Biesemans, S., Detavernier, C., Jordan-Sweet, J., Lavoie, C.

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Modulation of the effective work function of fully-silicided (FUSI) gate stacks von Kittl, J.A., Lauwers, A., Pawlak, M.A., Veloso, A., Yu, H.Y., Chang, S.Z., Hoffmann, T., Pourtois, G., Brus, S., Demeurisse, C., Vrancken, C., Absil, P.P., Biesemans, S.

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CMOS Integration of Dual Work Function Phase-Controlled Ni Fully Silicided Gates (NMOS:NiSi, PMOS: \hbox\hbox, and \hbox\hbox) on HfSiON von Kittl, J.A., Lauwers, A., Veloso, A., Hoffmann, T., Kubicek, S., Niwa, M., van Dal, M.J.H., Pawlak, M.A., Brus, S., Demeurisse, C., Vrancken, C., Absil, P., Biesemans, S.

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Phase effects and short gate length device implementation of Ni fully silicided (FUSI) gates von Kittl, J.A., Pawlak, M.A., Lauwers, A., Demeurisse, C., Hoffmann, T., Veloso, A., Anil, K.G., Kubicek, S., Niwa, M., van Dal, M.J.H., Richard, O., Jurczak, M., Vrancken, C., Chiarella, T., Brus, S., Maex, K., Biesemans, S.

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Work function of Ni silicide phases on HfSiON and SiO/sub 2/: NiSi, Ni/sub 2/Si, Ni/sub 31/Si/sub 12/, and Ni/sub 3/Si fully silicided gates von Kittl, J.A., Pawlak, M.A., Lauwers, A., Demeurisse, C., Opsomer, K., Anil, K.G., Vrancken, C., van Dal, M.J.H., Veloso, A., Kubicek, S., Absil, P., Maex, K., Biesemans, S.

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Demonstration of short-channel self-aligned Pt2Si-FUSI pMOSFETs with low threshold voltage (-0.29 V) on SiON and HfSiON von VAN DAL, M. J. H, BOCCARDI, G, VELOSO, A, LOCOROTONDO, S, SHI, X, DEMEURISSE, C, VRANCKEN, C, VERBEECK, R, LAUWERS, A, KITTL, J. A

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Study of silicide contacts to SiGe source/drain von Lauwers, A., van Dal, M.J.H., Verheyen, P., Chamirian, O., Demeurisse, C., Mertens, S., Vrancken, C., Verheyden, K., Funk, K., Kittl, J.A.

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Electrical Properties of nMOSFETs Using the NiSi:Yb FUSI Electrode von Yu, H.Y., Lauwers, A., Demeurisse, C., Richard, O., Mertens, S., Opsomer, K., Singanamalla, R., Rosseel, E., Absil, P., Biesemans, S.

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Demonstration of short-channel self-aligned Pt/sub 2/Si-FUSI pMOSFETs with low threshold voltage (-0.29 V) on SiON and HfSiON von van Dal, M.J.H., Boccardi, G., Veloso, A., Locorotondo, S., Shi, X., Demeurisse, C., Vrancken, C., Verbeeck, R., Lauwers, A., Kittl, J.A.

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Low temperature spike anneal for Ni-silicide formation von Lauwers, A., Kittl, J.A., Van Dal, M., Chamirian, O., Lindsay, R., de Potter, M., Demeurisse, C., Vrancken, C., Maex, K., Pagès, X., Van der Jeugd, K., Kuznetsov, V., Granneman, E.

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Neutrophil Elastase and its Inhibitors in Human Gingival Crevicular Fluid during Experimental Gingivitis von Giannopoulou, C., Andersen, E., Demeurisse, C., Cimasoni, G.

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Defect Removal, Dopant Diffusion and Activation Issues in Ion-Implanted Shallow Junctions Fabricated in Crystalline Germanium Substrates von Benedetti, A., Meuris, Marc, Demeurisse, C., Hoflijk, I., Claeys, Cor, Satta, A., Janssens, Tom, Simoen, Eddy, Clarysse, T., Vandervorst, W., Brijs, B.

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Impact of bottom electrode and SrxTiyOz film formation on physical and electrical properties of metal-insulator-metal capacitors von Pawlak, M. A., Kaczer, B., Kim, M.-S., Popovici, M., Swerts, J., Wang, W.-C., Opsomer, K., Favia, P., Tomida, K., Belmonte, A., Govoreanu, B., Vrancken, C., Demeurisse, C., Bender, H., Afanas’ev, V. V., Debusschere, I., Altimime, L., Kittl, J. A.

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