Carbon defects as sources of the green and yellow luminescence bands in undoped GaN von Reshchikov, M. A., Demchenko, D. O., Usikov, A., Helava, H., Makarov, Yu

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Native Point Defects in GaN: A Hybrid-Functional Study von Diallo, I. C., Demchenko, D. O.

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Magnesium acceptor in gallium nitride. I. Photoluminescence from Mg-doped GaN von Reshchikov, M. A., Ghimire, P., Demchenko, D. O.

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Yellow luminescence of gallium nitride generated by carbon defect complexes von Demchenko, D O, Diallo, I C, Reshchikov, M A

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Koopmans’ tuning of HSE hybrid density functional for calculations of defects in semiconductors: A case study of carbon acceptor in GaN von Demchenko, D. O., Reshchikov, M. A.

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Hydrogen-carbon complexes and the blue luminescence band in GaN von Demchenko, D. O., Diallo, I. C., Reshchikov, M. A.

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Shallow and Deep States of Beryllium Acceptor in GaN: Why Photoluminescence Experiments Do Not Reveal Small Polarons for Defects in Semiconductors von Demchenko, D O, Vorobiov, M, Andrieiev, O, Myers, T H, Reshchikov, M A

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Green luminescence in Mg-doped GaN von Reshchikov, M. A., Demchenko, D. O., McNamara, J. D., Fernández-Garrido, S., Calarco, R.

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Blue luminescence and Zn acceptor in GaN von Demchenko, D. O., Reshchikov, M. A.

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Passivation of acceptors in GaN by hydrogen and their activation von Reshchikov, M A, Andrieiev, O, Vorobiov, M, Ye, D, Demchenko, D O, McEwen, B, Shahedipour-Sandvik, F

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Photoluminescence from CdGa and HgGa acceptors in GaN von Reshchikov, M. A., Andrieiev, O., Vorobiov, M., Demchenko, D. O., McEwen, B., Shahedipour-Sandvik, F.

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Magnesium acceptor in gallium nitride. I. Photoluminescence from Mg-doped GaN von Reshchikov, M A, Ghimire, P, Demchenko, D O

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The effect of annealing on photoluminescence from defects in ammonothermal GaN von Reshchikov, M. A., Demchenko, D. O., Ye, D., Andrieiev, O., Vorobiov, M., Grabianska, K., Zajac, M., Nita, P., Iwinska, M., Bockowski, M., McEwen, B., Shahedipour-Sandvik, F.

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Deterministic modeling of hybrid nonlinear effects in epsilon-near-zero thin films von Secondo, R., Ball, A., Diroll, B., Fomra, D., Ding, K., Avrutin, V., Özgür, Ü., Demchenko, D. O., Khurgin, J. B., Kinsey, N.

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Thermal annealing of GaN implanted with Be von Reshchikov, M. A., Andrieiev, O., Vorobiov, M., Ye, D., Demchenko, D. O., Sierakowski, K., Bockowski, M., McEwen, B., Meyers, V., Shahedipour-Sandvik, F.

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Comment on "Determination of the Nitrogen Vacancy as a Shallow Compensating Center in GaN Doped with Divalent Metals" von Demchenko, D O, Reshchikov, M A

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Lattice parameters and electronic structure of BeMgZnO quaternary solid solutions: Experiment and theory von Toporkov, M., Demchenko, D. O., Zolnai, Z., Volk, J., Avrutin, V., Morkoç, H., Özgür, Ü.

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Lattice thermal conductivity in bulk and nanosheet NaxCoO2 von Demchenko, D.O., Ameen, D.B.

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Magnesium acceptor in gallium nitride. II. Koopmans-tuned Heyd-Scuseria-Ernzerhof hybrid functional calculations of its dual nature and optical properties von Demchenko, D. O., Diallo, I. C., Reshchikov, M. A.

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Effect of oxygen-to-metal flux ratio on incorporation of metal species into quaternary BeMgZnO grown by plasma-assisted molecular beam epitaxy von Toporkov, M., Ullah, M.B., Demchenko, D.O., Avrutin, V., Morkoç, H., Özgür, Ü.

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