On the generation of charge-carrier recombination centers in the sapphire substrates of silicon-on-sapphire structures von Aleksandrov, P. A., Belova, N. E., Demakov, K. D., Shemardov, S. G.

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Recrystallization of silicon-on-sapphire structures at various amorphization-ion-beam energies von Alexandrov, P. A., Demakov, K. D., Shemardov, S. G., Kuznetsov, Yu. Yu

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Crystalline quality improvement in silicon films on sapphire using recrystallization from the silicon-sapphire interface von Alexandrov, P. A., Demakov, K. D., Shemardov, S. G., Kuznetsov, Yu. Yu

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Effect of Rapid Thermal Annealing Conditions on Parameters of Ni/21R-SiC Contacts von Litvinov, V.L., Svetlichnyi, Alexander M., Konakova, Raisa V., Lytvyn, Petr M., Demakov, K.D., Agueev, Oleg A., Milenin, Victor V.

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Influence of rapid thermal annealing modes on the parameters of Ni/21R-SiC contacts von Litvinov, V.L., Demakov, K.D., Agueev, O.A., Svetlichnyi, A.M., Konakova, R.V., Lytvyn, P.M., Milenin, V.V.

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MANUFACTURING PROCESS FOR LIGHT-EMITTING DIODE STRUCTURES von DEMAKOV K.D, RAMM M.G, MOKHOV E.N, ROENKOV A.D, LOMAKINA G.A

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SEMICONDUCTOR LIGHT SOURCE von FEDORENKO A.P, DEMAKOV K.D, MOKHOV E.N, SEMENOV V.V, ROENKOV A.D, LOMAKINA G.A

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CARBORUNDUM BASED LIGHT-EMITTING DIODE von Demakov K.D, Gusev V.M, Stoljarova V.G

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