Thermoelectric properties of vapor-grown polycrystalline cubic SiC von Ivanova, L. M., Aleksandrov, P. A., Demakov, K. D.

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Application of ion implantation for the modification of silicon-on-sapphire epitaxial systems, their structure, and properties von Aleksandrov, P. A., Demakov, K. D., Shemardov, S. G., Belova, N. E.

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Effect of vapor phase composition on the properties of CVD 3C-SiC von Ivanova, L. M., Demakov, K. D., Shakhov, M. N.

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Deposition of cubic silicon carbide thin films via thermal decomposition of methyltrichlorosilane in hydrogen von Ivanova, L. M., Aleksandrov, P. A., Demakov, K. D., Starostin, V. A., Shemardov, S. G.

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On the generation of charge-carrier recombination centers in the sapphire substrates of silicon-on-sapphire structures von Aleksandrov, P. A., Belova, N. E., Demakov, K. D., Shemardov, S. G.

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Recrystallization of silicon-on-sapphire structures at various amorphization-ion-beam energies von Alexandrov, P. A., Demakov, K. D., Shemardov, S. G., Kuznetsov, Yu. Yu

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CVD silicon carbide electric heaters von Ivanova, L. M., Demakov, K. D., Shakhov, M. N., Prokhorov, Yu. N.

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Crystalline quality improvement in silicon films on sapphire using recrystallization from the silicon-sapphire interface von Alexandrov, P. A., Demakov, K. D., Shemardov, S. G., Kuznetsov, Yu. Yu

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Effect of Rapid Thermal Annealing Conditions on Parameters of Ni/21R-SiC Contacts von Litvinov, V.L., Svetlichnyi, Alexander M., Konakova, Raisa V., Lytvyn, Petr M., Demakov, K.D., Agueev, Oleg A., Milenin, Victor V.

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Diffusion of As ions and self-diffusion in silicon during implantation von Demakov, K. D., Starostin, V. A., Shemardov, S. G.

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Specific features of solid-phase recrystallization of silicon-on-sapphire structures amorphized by oxygen ions von Aleksandrov, P. A., Demakov, K. D., Shemardov, S. G., Kuznetsov, Yu. Yu

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Special features of formation and characteristics of Ni/21R-SiC Schottky diodes von Litvinov, V. L., Demakov, K. D., Ageev, O. A., Svetlichny, A. M., Konakova, R. V., Lytvyn, P. M., Lytvyn, O. S., Milenin, V. V.

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Anomalous behavior of arsenic ions implanted into silicon at 850°C von Demakov, K. D., Starostin, V. A.

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High-temperature implantation of boron ions into silicon von ALEKSANDROV, P. A, BARANOVA, E. K, DEMAKOV, K. D, SUPRUN-BELEVICH, Y. P, KRICHKEVICH, A. G

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Effect of rapid thermal annealing conditions on parameters of Ni /21R-SiC contacts von Litvinov, V L, Demakov, K D, Agueev, O A, Svetlichnyi, A M, Konakova, R V, Lytvyn, P M, Milenin, V V

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Radiative recombination of Al+-implanted alpha-sic p-n structures von Gusev, V. M., Demakov, K. D., Stolyarova, V. G.

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High-temperature implantation of boron ions into silcon von Aleksandrov, P. A., Baranova, E. K., Demakov, K. D., Suprun-Belevich, Yu. P., Krichkevich, A. G.

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Influence of rapid thermal annealing modes on the parameters of Ni/21R-SiC contacts von Litvinov, V.L., Demakov, K.D., Agueev, O.A., Svetlichnyi, A.M., Konakova, R.V., Lytvyn, P.M., Milenin, V.V.

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Effect of anomalous drift during ion implantation von ALEKSANDROV, P. A, BARANOVA, E. K, BELOSHITSKII, V. V, DEMAKOV, K. D, STAROSTIN, V. A

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Effect of anomalous drift during ion implantation von Aleksandrov, P. A., Baranova, E. K., Beloshitskii, V. V., Demakov, K. D., Starostin, V. A.

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