Excess noise in carbon nanotube devices von Soliveres, S, Delseny, C, Hoffmann, A, Pascal, F

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Sales bêtes ! Mauvaises herbes: Nuisible », une notion en débat von Luglia, Rémi

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Noise correlation measurements in bipolar transistors. I. Theoretical expressions and extracted current spectral densities von Jarrix, S., Delseny, C., Pascal, F., Lecoy, G.

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Parameter extraction of heterojunction bipolar transistor from low-frequency noise and S-parameter measurements von Penarier, A, G Jarrix, S, Perotin, M, Pascal, F, Delseny, C

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Impact of Technological Parameters on the Low Frequency Noise of Advanced Heterojunction Bipolar Transistors von Pascal, F, Raoult, J, Delseny, C, Benoit, P, Marin, M, Deen, M J

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1 ∕ f noise and percolation in carbon nanotube random networks von Soliveres, S., Gyani, J., Delseny, C., Hoffmann, A., Pascal, F.

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Analysis of 1/f noise current sources in InP/InGaAs heterojunction bipolar transistors von G.-Jarrix, S., Penarier, A., Pascal, F., Delseny, C., Chay, C., Blayac, S.

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Dc and low frequency noise analysis of hot-carrier induced degradation of low complexity 0.13 μm CMOS bipolar transistors von Benoit, P., Raoult, J., Delseny, C., Pascal, F., Snadny, L., Vildeuil, J.-C., Marin, M., Martinet, B., Cottin, D., Noblanc, O.

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Impact of carbon concentration on 1 ∕ f noise and random telegraph signal noise in SiGe:C heterojunction bipolar transistors von Raoult, J., Pascal, F., Delseny, C., Marin, M., Deen, M. J.

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Excess noise in AlGaAs/GaAs heterojunction bipolar transistors and associated TLM test structures von Delseny, C., Pascal, F., Jarrix, S., Lecoy, G., Dangla, J., Dubon-Chevallier, C.

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Low Frequency Noise in Contacted Single-Wall Carbon Nanotube von Soliverès, S., Hoffmann, A., Pascal, F., Delseny, C., Kabir, M.S., Nur, O., Salesse, A., Willander, M., Deen, M.J.

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Characterization of polysilicon bipolar transistors by low-frequency noise and correlation noise measurements von Mourier, Y, G-Jarrix, S, Delseny, C, Pascal, F, Pénarier, A, Gasquet, D

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Comparison of low frequency noise and high frequency performances of double and simple polysilicon Bi-CMOS BJT von Delseny, C, Pénarier, A, Pascal, F, Jarrix, S.G, Llinares, P

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Influence of geometry and passivation on noise in GaInP/GaAs heterojunction bipolar transistors von Delseny, C., Mourier, Y., Pascal, F., Jarrix, S., Lecoy, G.

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Low Frequency Noise of InP/InGaAs Heterojunction Bipolar Transistors von Penarier, A., Pascal, F., G-Jarrix, S., Delseny, C., Riet, M., Blayac, S.

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Generation-recombination noise analysis in heavily doped p -type GaAs transmission line models von Pascal, F., Jarrix, S., Delseny, C., Lecoy, G., Kleinpenning, T.

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Influence of a base epitaxial regrowth on first order and low frequency noise measurements on GaInP/GaAs HBTs von Mourier, Y, Pascal, F, G-Jarrix, S, Delseny, C, Lecoy, G

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Dc and Low Frequency Noise analysis of hot-carrier induced degradation of low complexity 0.13 µm CMOS bipolar transistors, Microelectronics Reliability von Benoit, Pascal, Raoult, Jérémy, Delseny, C., Pascal, F., Snadny, L., Vildeuil, J.C., Marin, M., Martinet, B., Cottin, D., Noblanc, O.

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Noise correlation measurements in bipolar transistors. II. Correlation between base and collector currents von Delseny, C., Pascal, F., Jarrix, S., Lecoy, G.

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Effective electric field in the n-type moderately doped region of silicon devices at 300 K von Van Cong, H., Brunet, S., Charar, S., Benet, S., Delseny, C., Martin, J. C.

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