Nanometre-scale electronics with III–V compound semiconductors von del Alamo, Jesús A.

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A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors von Jungwoo Joh, del Alamo, J A

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III–V compound semiconductor transistors—from planar to nanowire structures von Riel, Heike, Wernersson, Lars-Erik, Hong, Minghwei, del Alamo, Jesús A.

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On the Imprint Mechanism of Thin-Film Hf₀.₅Zr₀.₅O₂ Ferroelectrics von Kim, Taekyong, Alamo, Jesus A. del, Antoniadis, Dimitri

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Refractory W Ohmic Contacts to H-Terminated Diamond von Vardi, Alon, Tordjman, Moshe, Kalish, Rafi, del Alamo, Jesus A.

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Changes to the Editorial Board von Del Alamo, Jesus A. Del

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A Test Structure to Characterize Nano-Scale Ohmic Contacts in III-V MOSFETs von Wenjie Lu, Guo, Alex, Vardi, Alon, del Alamo, Jesus A.

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Scalability of Sub-100 nm InAs HEMTs on InP Substrate for Future Logic Applications von Dae-Hyun Kim, del Alamo, Jesús A

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Unified Mechanism for Positive- and Negative-Bias Temperature Instability in GaN MOSFETs von Guo, Alex, del Alamo, Jesus A.

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A model for the critical voltage for electrical degradation of GaN high electron mobility transistors von Joh, Jungwoo, Gao, Feng, Palacios, Tomás, del Alamo, Jesús A.

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Change of Editor-in-Chief of EDL von Alamo, Jesus A. Del

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Sub-10-nm Fin-Width Self-Aligned InGaAs FinFETs von Vardi, Alon, del Alamo, Jesus A.

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Changes to the Editorial Board von Alamo, Jesus A. Del

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Changes to the Editorial Board von Alamo, Jesus A. Del

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Nanometer-Scale Vertical-Sidewall Reactive Ion Etching of InGaAs for 3-D III-V MOSFETs von Xin Zhao, del Alamo, Jesus A.

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Sub-Thermal Subthreshold Characteristics in Top-Down InGaAs/InAs Heterojunction Vertical Nanowire Tunnel FETs von Xin Zhao, Vardi, Alon, del Alamo, Jesus A.

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Impact of high-power stress on dynamic ON-resistance of high-voltage GaN HEMTs von Jin, Donghyun, del Alamo, Jesús A.

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WO3 Passivation of Access Regions in Diamond MOSFETs von Vardi, Alon, Tordjman, Moshe, Kalish, Rafi, Alamo, Jesus A. del

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Activation energy of drain-current degradation in GaN HEMTs under high-power DC stress von Wu, Yufei, Chen, Chia-Yu, del Alamo, Jesús A.

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Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors von Jungwoo Joh, del Alamo, J.A.

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