Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors von Vincent, B., Shimura, Y., Takeuchi, S., Nishimura, T., Eneman, G., Firrincieli, A., Demeulemeester, J., Vantomme, A., Clarysse, T., Nakatsuka, O., Zaima, S., Dekoster, J., Caymax, M., Loo, R.

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Electronic band structure of compressively strained Ge1−xSnx with x < 0.11 studied by contactless electroreflectance von Zelazna, K., Polak, M. P., Scharoch, P., Serafinczuk, J., Gladysiewicz, M., Misiewicz, J., Dekoster, J., Kudrawiec, R.

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Low interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate diele... von Chu, L. K., Merckling, C., Alian, A., Dekoster, J., Kwo, J., Hong, M., Caymax, M., Heyns, M.

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Temperature dependence of energy gap of Ge1−xSnx alloys with x  <  0.11 studied by photoreflectance von Zelazna, K, We na, M, Misiewicz, J, Dekoster, J, Kudrawiec, R

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Effective reduction of interfacial traps in Al2O3/GaAs (001) gate stacks using surface engineering and thermal annealing von Chang, Y. C., Merckling, C., Penaud, J., Lu, C. Y., Wang, W.-E., Dekoster, J., Meuris, M., Caymax, M., Heyns, M., Kwo, J., Hong, M.

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Selective area growth of high quality InP on Si (001) substrates von Wang, G., Leys, M. R., Loo, R., Richard, O., Bender, H., Waldron, N., Brammertz, G., Dekoster, J., Wang, W., Seefeldt, M., Caymax, M., Heyns, M. M.

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Molecular beam epitaxial growth of BaTiO3 single crystal on Ge-on-Si(001) substrates von Merckling, C., Saint-Girons, G., Botella, C., Hollinger, G., Heyns, M., Dekoster, J., Caymax, M.

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Growth of high quality InP layers in STI trenches on miscut Si (0 0 1) substrates von Wang, G., Leys, M.R., Nguyen, N.D., Loo, R., Brammertz, G., Richard, O., Bender, H., Dekoster, J., Meuris, M., Heyns, M.M., Caymax, M.

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Ge1―xSnx stressors for strained-Ge CMOS von TAKEUCHI, S, SHIMURA, Y, LOO, R, SAKAI, A, NAKATSUKA, O, ZAIMA, S, NISHIMURA, T, VINCENT, B, ENEMAN, G, CLARYSSE, T, DEMEULEMEESTER, J, VANTOMME, A, DEKOSTER, J, CAYMAX, M

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Attainment of low interfacial trap density absent of a large midgap peak in In0.2Ga0.8As by Ga2O3(Gd2O3) passivation von Lin, C. A., Chiu, H. C., Chiang, T. H., Lin, T. D., Chang, Y. H., Chang, W. H., Chang, Y. C., Wang, W.-E., Dekoster, J., Hoffmann, T. Y., Hong, M., Kwo, J.

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Si passivation for Ge pMOSFETs: Impact of Si cap growth conditions von Vincent, B., Loo, R., Vandervorst, W., Delmotte, J., Douhard, B., Valev, V.K., Vanbel, M., Verbiest, T., Rip, J., Brijs, B., Conard, T., Claypool, C., Takeuchi, S., Zaima, S., Mitard, J., De Jaeger, B., Dekoster, J., Caymax, M.

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Growth of high Ge content SiGe on (110) oriented Si wafers von Hikavyy, A., Vanherle, W., Vincent, B., Dekoster, J., Bender, H., Moussa, A., Witters, L., Hoffman, T., Loo, R.

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Single crystalline InxGa1−xN layers on germanium by molecular beam epitaxy von Lieten, R. R, Tseng, W.-J, Yu, K. M, van de Graaf, W, Locquet, J.-P, Dekoster, J, Borghs, G

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Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivation von MERCKLING, C, CHANG, Y. C, MEURIS, M, HEYNS, M, CAYMAX, M, LU, C. Y, PENAUD, J, BRAMMERTZ, G, SCARROZZA, M, POURTOIS, G, KWO, J, HONG, M, DEKOSTER, J

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Molecular beam epitaxy passivation studies of Ge and III–V semiconductors for advanced CMOS von Merckling, C., Penaud, J., Kohen, D., Bellenger, F., Alian, A., Brammertz, G., El-Kazzi, M., Houssa, M., Dekoster, J., Caymax, M., Meuris, M., Heyns, M.M.

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Low interfacial density of states around midgap in MBE-Ga2O3(Gd2O3)/In0.2Ga0.8As von Lin, C.A., Chiu, H.C., Chiang, T.H., Chang, Y.C., Lin, T.D., Kwo, J., Wang, W.-E., Dekoster, J., Heyns, M., Hong, M.

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H2S molecular beam passivation of Ge(0 0 1) von MERCKLING, C, CHANG, Y. C, DEKOSTER, J, HEYNS, M. M, CAYMAX, M, LU, C. Y, PENAUD, J, EL-KAZZI, M, BELLENGER, F, BRAMMERTZ, G, HONG, M, KWO, J, MEURIS, M

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Concentration-controlled phase selection of silicide formation during reactive deposition von Vantomme, A., Degroote, S., Dekoster, J., Langouche, G., Pretorius, R.

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Temperature dependence of energy gap of Ge 1− x Sn x alloys with x   <  0.11 studied by photoreflectance von Zelazna, K, Wełna, M, Misiewicz, J, Dekoster, J, Kudrawiec, R

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Temperature dependence of energy gap of Ge sub(1-x) von Zelazna, K, Welna, M, Misiewicz, J, Dekoster, J, Kudrawiec, R

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