Influence of defect type on hydrogen passivation efficacy in multicrystalline silicon solar cells von Bertoni, M.I., Hudelson, S., Newman, B.K., Fenning, D.P., Dekkers, H.F.W., Cornagliotti, E., Zuschlag, A., Micard, G., Hahn, G., Coletti, G., Lai, B., Buonassisi, T.

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The effect of composition on the bond structure and refractive index of silicon nitride deposited by HWCVD and PECVD von Verlaan, V., Verkerk, A.D., Arnoldbik, W.M., van der Werf, C.H.M., Bakker, R., Houweling, Z.S., Romijn, I.G., Borsa, D.M., Weeber, A.W., Luxembourg, S.L., Zeman, M., Dekkers, H.F.W., Schropp, R.E.I.

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Study of the hydrogenation mechanism by rapid thermal anneal of SiN:H in thin-film polycrystalline-silicon solar cells von Carnel, L., Dekkers, H.F.W., Gordon, I., Van Gestel, D., Van Nieuwenhuysen, K., Beaucarne, G., Poortmans, J.

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Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge von Agostinelli, G., Delabie, A., Vitanov, P., Alexieva, Z., Dekkers, H.F.W., De Wolf, S., Beaucarne, G.

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Determination of effective diffusion length and saturation current density in silicon solar cells von Zhu, J.M., Shen, W.Z., Zhang, Y.H., Dekkers, H.F.W.

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Systematic Study on the Amorphous, C-Axis-Aligned Crystalline, and Protocrystalline Phases in In-Ga-Zn Oxide Thin-Film Transistors von Glushkova, A.V, Dekkers, H.F.W, Nag, M, del Agua Borniquel, J.I, Ramalingam, J, Genoe, J, Heremans, P, Rolin, C

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Infrared molar absorption coefficient of H2O stretching modes in SiO2 von Dekkers, H.F.W., Gallo, A., Van Elshocht, S.

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Molecular hydrogen formation in hydrogenated silicon nitride von Dekkers, H. F. W., Beaucarne, G., Hiller, M., Charifi, H., Slaoui, A.

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Advanced dry processes for crystalline silicon solar cells von Agostinelli, G., Choulat, P., Dekkers, H.F.W., De Wolf, S., Beaucarne, G.

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Requirements of PECVD SiNx:H layers for bulk passivation of mc-Si von DEKKERS, H. F. W, DE WOLF, S, AGOSTINELLI, G, DUERINCKX, F, BEAUCARNE, G

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Multi-crystalline Si solar cells with very fast deposited (180 nm/min) passivating hot-wire CVD silicon nitride as antireflection coating von Verlaan, V., van der Werf, C. H. M., Houweling, Z. S., Romijn, I. G., Weeber, A. W., Dekkers, H. F. W., Goldbach, H. D., Schropp, R. E. I.

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The effect of composition on the bond structure and refractive index of silicon nitride deposited by HWCVD and PECVD von Dekkers, H.F.W, Zeman, M, Verlaan, V, Verkerk, A.D, Arnoldbik, W.M, van der Werf, C.H.M, Bakker, R, Houweling, Z.S, Romijn, I.G, Borsa, D.M, Luxembourg, S.L, Schropp, R.E.I

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Requirements of PECVD SiN x :H layers for bulk passivation of mc-Si von Dekkers, H.F.W., De Wolf, S., Agostinelli, G., Duerinckx, F., Beaucarne, G.

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High temperature line electrode assembly for continuous substrate flow VHF PECVD von Schade, K., Stahr, F., Kuske, J., Röhlecke, S., Steinke, O., Stephan, U., Dekkers, H.F.W.

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Hydrogen diffusion in silicon from PECVD silicon nitride von Sheoran, Manav, Kim, Dong Seop, Rohatgi, Ajeet, Dekkers, H.F.W., Beaucarne, G., Young, Matthew, Asher, Sally

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Rear Surface Passivation for Industrial Solar Cells on Thin Substrates von Agostinelli, G., Choulat, P., Dekkers, H.F.W., Vermarien, E., Beaucarne, G.

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Novel concept for thin multi-crystalline silicon solar cell process von De Wolf, S., Dekkers, H.F.W., Agostinelli, G., Szlufcik, J.

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The influence of surface preparation on rear surface passivation of mc-Si by thermally treated direct PECVD silicon nitride von Dekkers, H.F.W., Duerinckx, F., De Wolf, S., Agostinelli, G., Szlufcik, J.

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Investigation on mc-Si bulk passivation using deuterated silicon-nitride von Dekkers, H.F.W., De Wolf, S., Agostinelli, G., Szlufcik, J., Pernau, T., Arnoldbik, W.M., Goldbach, H.D., Schropp, R.E.I.

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