Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge von Agostinelli, G., Delabie, A., Vitanov, P., Alexieva, Z., Dekkers, H.F.W., De Wolf, S., Beaucarne, G.

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Metal gate work function tuning by Al incorporation in TiN von Lima, L. P. B., Dekkers, H. F. W., Lisoni, J. G., Diniz, J. A., Van Elshocht, S., De Gendt, S.

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Properties of ALD TaxNy films as a barrier to aluminum in work function metal stacks von Dekkers, H. F. W., Ragnarsson, L.-Å., Schram, T., Horiguchi, N.

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Influence of defect type on hydrogen passivation efficacy in multicrystalline silicon solar cells von Bertoni, M.I., Hudelson, S., Newman, B.K., Fenning, D.P., Dekkers, H.F.W., Cornagliotti, E., Zuschlag, A., Micard, G., Hahn, G., Coletti, G., Lai, B., Buonassisi, T.

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Multi-crystalline Si solar cells with very fast deposited (180 nm/min) passivating hot-wire CVD silicon nitride as antireflection coating von Verlaan, V., van der Werf, C. H. M., Houweling, Z. S., Romijn, I. G., Weeber, A. W., Dekkers, H. F. W., Goldbach, H. D., Schropp, R. E. I.

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Infrared molar absorption coefficient of H2O stretching modes in SiO2 von Dekkers, H.F.W., Gallo, A., Van Elshocht, S.

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Optical properties and local bonding configurations of hydrogenated amorphous silicon nitride thin films von Mei, J. J., Chen, H., Shen, W. Z., Dekkers, H. F. W.

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Carrier trap passivation in multicrystalline Si solar cells by hydrogen from SiNx:H layers von Dekkers, H. F. W., Carnel, L., Beaucarne, G.

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Molecular hydrogen formation in hydrogenated silicon nitride von Dekkers, H. F. W., Beaucarne, G., Hiller, M., Charifi, H., Slaoui, A.

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The effect of composition on the bond structure and refractive index of silicon nitride deposited by HWCVD and PECVD von Verlaan, V., Verkerk, A.D., Arnoldbik, W.M., van der Werf, C.H.M., Bakker, R., Houweling, Z.S., Romijn, I.G., Borsa, D.M., Weeber, A.W., Luxembourg, S.L., Zeman, M., Dekkers, H.F.W., Schropp, R.E.I.

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Requirements of PECVD SiNx:H layers for bulk passivation of mc-Si von DEKKERS, H. F. W, DE WOLF, S, AGOSTINELLI, G, DUERINCKX, F, BEAUCARNE, G

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Influence of density on NH bond stretch vibration in plasma enhanced chemical vapor deposited SiNx:H von Dekkers, H. F. W., Srinivasan, Nagendra Babu, Pourtois, G.

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Study of the hydrogenation mechanism by rapid thermal anneal of SiN:H in thin-film polycrystalline-silicon solar cells von Carnel, L., Dekkers, H.F.W., Gordon, I., Van Gestel, D., Van Nieuwenhuysen, K., Beaucarne, G., Poortmans, J.

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Origin of visible luminescence in hydrogenated amorphous silicon nitride von Hao, H. L., Wu, L. K., Shen, W. Z., Dekkers, H. F. W.

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High temperature line electrode assembly for continuous substrate flow VHF PECVD von Schade, K., Stahr, F., Kuske, J., Röhlecke, S., Steinke, O., Stephan, U., Dekkers, H.F.W.

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Determination of effective diffusion length and saturation current density in silicon solar cells von Zhu, J.M., Shen, W.Z., Zhang, Y.H., Dekkers, H.F.W.

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Hydrogen diffusion in silicon from plasma-enhanced chemical vapor deposited silicon nitride film at high temperature von Sheoran, Manav, Kim, Dong Seop, Rohatgi, Ajeet, Dekkers, H. F. W., Beaucarne, G., Young, Matthew, Asher, Sally

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Impact of defect type on hydrogen passivation effectiveness in multicrystalline silicon solar cells von Bertoni, M I, Hudelson, S, Newman, B K, Bernardis, S, Fenning, D P, Dekkers, H F W, Cornagliotti, E, Zuschlag, A, Micard, G, Hahn, G, Coletti, G, Lai, B, Buonassisi, T

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Influence of density on N-H bond stretch vibration in plasma enhanced chemical vapor deposited SiN{sub x}:H von Dekkers, H. F. W., Pourtois, G., Srinivasan, Nagendra Babu

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Influence of density on N  H bond stretch vibration in plasma enhanced chemical vapor deposited SiN x : H von Dekkers, H. F. W., Srinivasan, Nagendra Babu, Pourtois, G.

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