Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal von Visalli, Domenica, Van Hove, Marleen, Srivastava, Puneet, Derluyn, Joff, Das, Johan, Leys, Maarten, Degroote, Stefan, Cheng, Kai, Germain, Marianne, Borghs, Gustaaf

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Silicon Substrate Removal of GaN DHFETs for Enhanced (<1100 V) Breakdown Voltage von Srivastava, Puneet, Das, Jo, Visalli, Domenica, Derluyn, Joff, Van Hove, Marleen, Malinowski, Pawel E, Marcon, Denis, Geens, Karen, Kai Cheng, Degroote, Stefan, Leys, Maarten, Germain, Marianne, Decoutere, Stefaan, Mertens, Robert P, Borghs, Gustaaf

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Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment von Tajalli, Alaleh, Borga, Matteo, Meneghini, Matteo, De Santi, Carlo, Benazzi, Davide, Besendoerfer, Sven, Pusche, Roland, Derluyn, Joff, Degroote, Stefan, Germain, Marianne, Kabouche, Riad, Abid, Idriss, Meissner, Elke, Zanoni, Enrico, Medjdoub, Farid, Meneghesso, Gaudenzio

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Limitations of Field Plate Effect Due to the Silicon Substrate in AlGaN/GaN/AlGaN DHFETs von Visalli, D, Van Hove, M, Derluyn, J, Srivastava, P, Marcon, D, Das, J, Leys, M R, Degroote, S, Kai Cheng, Vandenplas, E, Germain, M, Borghs, G

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Growth of GaN/AlGaN on 200 mm diameter silicon (111) wafers by MOCVD von Boyd, Adam R., Degroote, Stefan, Leys, Maarten, Schulte, Frank, Rockenfeller, Olaf, Luenenbuerger, Markus, Germain, Marianne, Kaeppeler, Johannes, Heuken, Michael

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Solid phase epitaxy of amorphous Ge films deposited by PECVD von Ma, Quan-Bao, Lieten, Ruben, Leys, Maarten, Degroote, Stefan, Germain, Marianne, Borghs, Gustaaf

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Influence of thermal anneal steps on the current collapse of fluorine treated enhancement mode SiN/AlGaN/GaN HEMTs von Lorenz, Anne, Derluyn, Joff, Das, Jo, Cheng, Kai, Degroote, Stefan, Medjdoub, Farid, Germain, Marianne, Borghs, Gustaaf

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Investigation of Light-Induced Deep-Level Defect Activation at the AlN/Si Interface von Visalli, Domenica, Hove, Marleen Van, Leys, Maarten, Derluyn, Joff, Simoen, Eddy, Srivastava, Puneet, Geens, Karen, Degroote, Stefan, Germain, Marianne, Nguyen, Anh Phuc Duc, Stesmans, André, Borghs, Gustaaf

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A micro-electro-mechanical accelerometer based on gallium nitride on silicon von Morelle, C., Théron, D., Roch-Jeune, I., Tilmant, P., Okada, E., Vaurette, F., Grimbert, B., Derluyn, J., Degroote, S., Germain, M., Faucher, M.

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High breakdown voltage in AlGaN/GaN/AlGaN double heterostructures grown on 4 inch Si substrates von Visalli, Domenica, Van Hove, Marleen, Derluyn, Joff, Cheng, Kai, Degroote, Stefan, Leys, Maarten, Germain, Marianne, Borghs, Gustaaf

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Surface recombination velocity in GaAs and In0.15Ga0.85As thin films von Brammertz, Guy, Heyns, Marc, Meuris, Marc, Caymax, Matty, Jiang, Dehuai, Mols, Yves, Degroote, Stefan, Leys, Maarten, Borghs, Gustaaf

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Extended wavelength InGaAs on GaAs using InAlAs buffer for back-side-illuminated short-wave infrared detectors von Zimmermann, Lars, John, Joachim, Degroote, Stefan, Borghs, Gustaaf, Van Hoof, Chris, Nemeth, Stefan

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AlGaN Channel High Electron Mobility Transistors with Regrown Ohmic Contacts von Abid, Idriss, Mehta, Jash, Cordier, Yvon, Derluyn, Joff, Degroote, Stefan, Miyake, Hideto, Medjdoub, Farid

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Effect of Surface Passivation on Two-Dimensional Electron Gas Carrier Density in AlGaN/GaN Structures von Wang, Wenfei, Derluyn, Joff, Germain, Marianne, Leys, Maarten, Degroote, Stefan, Schreurs, Dominique, Borghs, Gustaaf

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Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures von Kabouche, Riad, Abid, Idriss, Püsche, Roland, Derluyn, Joff, Degroote, Stefan, Germain, Marianne, Tajalli, Alaleh, Meneghini, Matteo, Meneghesso, Gaudenzio, Medjdoub, Farid

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GaN-on-Si HEMT stress under high electric field condition von Marcon, Denis, Lorenz, Anne, Derluyn, Joff, Das, Jo, Medjdoub, Farid, Cheng, Kai, Degroote, Stefan, Leys, Maarten, Mertens, Robert, Germain, Marianne, Borghs, Gustaaf

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Low On‐Resistance and Low Trapping Effects in 1200V Superlattice GaN‐on‐Silicon Heterostructures von Kabouche, Riad, Idriss Abid, Püsche, Roland, Derluyn, Joff, Degroote, Stefan, Germain, Marianne, Tajalli, Alaleh, Meneghini, Matteo, Meneghesso, Gaudenzio, Medjdoub, Farid

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High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications von Tajalli, Alaleh, Meneghini, Matteo, Besendoerfer, Sven, Kabouche, Riad, Abid, Idriss, Puesche, Roland, Derluyn, Joff, Degroote, Stefan, Germain, Marianne, Meissner, Elke, Zanoni, Enrico, Medjdoub, Farid, Meneghesso, Gaudenzio

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(Invited) Selective Epitaxial Growth of III-V Semiconductor Heterostructures on Si Substrates for Logic Applications von Nguyen, Ngoc Duy, Wang, Gang, Brammertz, Guy, Leys, Maarten, Waldron, Niamh, Winderickx, Gillis, Lismont, Kevin, Dekoster, J., Loo, Roger, Meuris, Marc, Degroote, Stefan, Buttitta, Francesco, O'Neil, Barry, Féron, Olivier, Lindner, Johannes, Schulte, Frank, Schineller, Bernd, Heuken, Michael, Caymax, Matty

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Low-temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates von Brammertz, Guy, Mols, Yves, Degroote, Stefan, Motsnyi, Vasyl, Leys, Maarten, Borghs, Gustaaf, Caymax, Matty

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