Communication in healthcare: a narrative review of the literature and practical recommendations von Vermeir, P., Vandijck, D., Degroote, S., Peleman, R., Verhaeghe, R., Mortier, E., Hallaert, G., Van Daele, S., Buylaert, W., Vogelaers, D.

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Communication satisfaction and job satisfaction among critical care nurses and their impact on burnout and intention to leave: A questionnaire study von Vermeir, P., Blot, S., Degroote, S., Vandijck, D., Mariman, A., Vanacker, T., Peleman, R., Verhaeghe, R., Vogelaers, D.

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A micro-electro-mechanical accelerometer based on gallium nitride on silicon von Morelle, C., Théron, D., Roch-Jeune, I., Tilmant, P., Okada, E., Vaurette, F., Grimbert, B., Derluyn, J., Degroote, S., Germain, M., Faucher, M.

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Ohmic contact formation on n -type Ge von Lieten, R. R., Degroote, S., Kuijk, M., Borghs, G.

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Low On-Resistance High-Breakdown Normally Off AlN/GaN/AlGaN DHFET on Si Substrate von Medjdoub, F., Derluyn, J., Cheng, K., Leys, M., Degroote, S., Marcon, D., Visalli, D., Van Hove, M., Germain, M., Borghs, G.

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Improvement of AlGaN∕GaN high electron mobility transistor structures by in situ deposition of a Si3N4 surface layer von Derluyn, J., Boeykens, S., Cheng, K., Vandersmissen, R., Das, J., Ruythooren, W., Degroote, S., Leys, M. R., Germain, M., Borghs, G.

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High quality GaN grown on silicon(111) using a SixNy interlayer by metal-organic vapor phase epitaxy von Cheng, Kai, Leys, M., Degroote, S., Germain, M., Borghs, G.

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Formation of V-grooves on the (Al,Ga)N surface as means of tensile stress relaxation von Cheng, Kai, Leys, M., Degroote, S., Bender, H., Favia, P., Borghs, G., Germain, M.

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Gangliosides in breast cancer: New perspectives von Groux-Degroote, S., Guérardel, Y., Julien, S., Delannoy, P.

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Strain effects in GaN epilayers grown on different substrates by metal organic vapor phase epitaxy von Zhang, L., Cheng, K., Degroote, S., Leys, M., Germain, M., Borghs, G.

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Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers von Cheng, Kai, Leys, M., Degroote, S., Van Daele, B., Boeykens, S., Derluyn, J., Germain, M., Van Tendeloo, G., Engelen, J., Borghs, G.

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Mechanisms of Schottky Barrier Control on n-Type Germanium Using Ge3N4 Interlayers von Lieten, R. R., Afanas’ev, V. V., Thoan, N. H., Degroote, S., Walukiewicz, W., Borghs, G.

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Mg doping of GaN by molecular beam epitaxy von Lieten, R R, Motsnyi, V, Zhang, L, Cheng, K, Leys, M, Degroote, S, Buchowicz, G, Dubon, O, Borghs, G

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Effect of V/III ratio in AlN and AlGaN MOVPE von Lobanova, A.V., Mazaev, K.M., Talalaev, R.A, Leys, M., Boeykens, S., Cheng, K., Degroote, S.

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GaAs on Ge for CMOS von Brammertz, G., Caymax, M., Meuris, M., Heyns, M., Mols, Y., Degroote, S., Leys, M.

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Solid phase epitaxy of amorphous Ge on Si in N2 atmosphere von Lieten, R. R., Degroote, S., Leys, M., Posthuma, N. E., Borghs, G.

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Hydrogen and inert species in solid phase epitaxy von Lieten, R. R., Degroote, S., Clemente, F., Leys, M., Borghs, G.

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AlN/GaN heterostructures grown by metal organic vapor phase epitaxy with in situ Si3N4 passivation von KAI CHENG, DEGROOTE, S, LEYS, M, MEDJDOUB, F, DERLUYN, J, SIJMUS, B, GERMAIN, M, BORGHS, G

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AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si3N4 von KAI CHENG, LEYS, M, DERLUYN, J, DEGROOTE, S, XIAO, D. P, LORENZ, A, BOEYKENS, S, GERMAIN, M, BORGHS, G

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Growth and characterization of unintentionally doped GaN grown on silicon(1 1 1) substrates von Leys, M., Cheng, Kai, Derluyn, J., Degroote, S., Germain, M., Borghs, G., Taylor, C.A., Dawson, P.

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