Chemical states of nitrogen in ZnO studied by near-edge X-ray absorption fine structure and core-level photoemission spectroscopies von Petravic, M., Deenapanray, P.N.K., Coleman, V.A., Jagadish, C., Kim, K.-J., Kim, B., Koike, K., Sasa, S., Inoue, M., Yano, M.

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Broadening of vibrational levels in X-ray absorption spectroscopy of molecular nitrogen in compound semiconductors von Petravic, M., Gao, Q., Llewellyn, D., Deenapanray, P.N.K., Macdonald, D., Crotti, C.

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Electronically-coupled up-conversion: an alternative approach to impurity photovoltaics in crystalline silicon von Macdonald, D, McLean, K, Deenapanray, P N K, De Wolf, S, Schmidt, J

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Modeling of static concentrator modules incorporating lambertian or v-groove rear reflectors von Weber, K.J., Everett, V., Deenapanray, P.N.K., Franklin, E., Blakers, A.W.

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DLTS of low-energy hydrogen ion implanted n-Si von Deenapanray, Prakash N.K.

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Electrical properties and diffusion behavior of hafnium in single crystal silicon von SACHDEVA, R, ISTRATOV, A. A, DEENAPANRAY, P. N. K, WEBER, E. R

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Deep level transient spectroscopy of defects introduced in Si and SiGe by low energy particles von Deenapanray, Prakash N K, Auret, F Danie

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Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS von Nyamhere, Cloud, Deenapanray, P.N.K., Auret, F.D., Farlow, F.C.

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Optical, electrical, and diffusion properties of hafnium and zirconium in single-crystal silicon von Sachdeva, R., Istratov, A.A., Radetic, T., Xu, X., Deenapanray, P.N.K., Weber, E.R.

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Nitrogen defect levels in InN: XANES study von Soldatov, Alexander V., Guda, Alexander, Kravtsova, Antonina, Petravic, M., Deenapanray, P.N.K., Fraser, M.D., Yang, Y.-W., Anderson, P.A., Durbin, S.M.

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Electrical characterization of impurity-free disordering-induced defects in n-GaAs using native oxide layers von Deenapanray, P.N.K., Tan, H.H., Jagadish, C.

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The effect of potassium on the rate of solid phase epitaxy in silicon von Liu, A.C.Y., McCallum, J.C., Deenapanray, P.N.K.

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Sliver/spl reg/ solar cells von Weber, K.J., Blakers, A.W., Deenapanray, P.N.K., Everett, V., Franklin, E.

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Electron emission properties of a defect at ∼(Ec−0.23 eV) in impurity-free disordered n-GaAs von Deenapanray, P.N.K., Meyer, W.E., Auret, F.D., Krispin, M., Jagadish, C.

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Deep-level transient spectroscopy study of electron traps in rapid thermally annealed SiO 2-capped n-type GaAs layers grown by metalorganic chemical vapour deposition von Deenapanray, P.N.K., Lay, M., Åberg, D., Tan, H.H., Svensson, B.G., Auret, F.D., Jagadish, C.

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Electrical characterization and annealing properties of electrically active defects introduced in n-Si during sputter etching in an Ar-plasma von Deenapanray, P.N.K, Auret, F.D, Myburg, G

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A DLTS and RBS analysis of the angular dependence of defects introduced in Si during ion beam channelling using 435 keV alphaparticles von Deenapanray, P.N.K., Ridgway, M.C., Auret, F.D., Friedland, E.

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Deep-level transient spectroscopy study of electron traps in rapid thermally annealed SiO2-capped n-type GaAs layers grown by metalorganic chemical vapour deposition von Deenapanray, P.N.K., Lay, M., Åberg, D., Tan, H.H., Svensson, B.G., Auret, F.D., Jagadish, C.

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The role of Fe on the crystallisation of α-Si 3N 4 from amorphous Si–N formed by ion implantation von Li, Z.L, Wong-Leung, J, Deenapanray, P.N.K, Conway, M, Chivers, D.J, Fitz Gerald, J.D, Williams, J.S

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The role of Fe on the crystallisation of α-Si3N4 from amorphous Si–N formed by ion implantation von Li, Z.L, Wong-Leung, J, Deenapanray, P.N.K, Conway, M, Chivers, D.J, Fitz Gerald, J.D, Williams, J.S

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