Determining by Raman spectroscopy the average thickness and N-layer-specific surface coverages of MoS2 thin films with domains much smaller than the laser spot size von Wasem Klein, Felipe, Huntzinger, Jean-Roch, Astié, Vincent, Voiry, Damien, Parret, Romain, Makhlouf, Houssine, Juillaguet, Sandrine, Decams, Jean-Manuel, Contreras, Sylvie, Landois, Périne, Zahab, Ahmed-Azmi, Sauvajol, Jean-Louis, Paillet, Matthieu

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Ultralow‐k Amorphous Boron Nitride Based on Hexagonal Ring Stacking Framework for 300 mm Silicon Technology Platform von Lin, Cheng‐Ming, Hsu, Chuang‐Han, Huang, Wei‐Yu, Astié, Vincent, Cheng, Po‐Hsien, Lin, Yue‐Min, Hu, Wei‐Shan, Chen, Szu‐Hua, Lin, Han‐Yu, Li, Ming‐Yang, Magyari‐Kope, Blanka, Yang, Chi‐Ming, Decams, Jean‐Manuel, Lee, Tzu‐Lih, Gui, Dong, Wang, Han, Woon, Wei‐Yen, Lin, Pinyen, Wu, Jeff, Lee, Jang‐Jung, Liao, Szuya Sandy, Cao, Min

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Relationship Processing–Composition–Structure–Resistivity of LaNiO3 Thin Films Grown by Chemical Vapor Deposition Methods von Kuprenaite, Sabina, Astié, Vincent, Margueron, Samuel, Millon, Cyril, Decams, Jean-Manuel, Saltyte, Zita, Boulet, Pascal, Plausinaitiene, Valentina, Abrutis, Adulfas, Bartasyte, Ausrine

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Heteroleptic Tin(IV) Aminoalkoxides and Aminofluoroalkoxides as MOCVD Precursors for Undoped and F‑Doped SnO2 Thin Films von Verchère, Alexandre, Mishra, Shashank, Jeanneau, Erwann, Guillon, Hervé, Decams, Jean-Manuel, Daniele, Stéphane

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Integration of epitaxial LiNbO3 thin films with silicon technology von Bartasyte, Ausrine, Oliveri, Stefania, Boujnah, Sondes, Margueron, Samuel, Bachelet, Romain, Saint-Girons, Guillaume, Albertini, David, Gautier, Brice, Boulet, Pascal, Nuta, Ioana, Blanquet, Elisabeth, Astié, Vincent, Decams, Jean-Manuel

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Buffer layers inhomogeneity and coupling with epitaxial graphene unravelled by Raman scattering and graphene peeling von Wang, Tianlin, Huntzinger, Jean-Roch, Bayle, Maxime, Roblin, Christophe, Decams, Jean-Manuel, Zahab, Ahmed-Azmi, Contreras, Sylvie, Paillet, Matthieu, Landois, Périne

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Direct liquid injection pulsed-pressure MOCVD of large area MoS2 on Si/SiO2 von Astié, Vincent, Felipe Wasem Klein, Makhlouf, Houssin, Paillet, Matthieu, Jean-Roch Huntzinger, Jean-Louis Sauvajol, Ahmed-Azmi Zahab, Juillaguet, Sandrine, Contreras, Sylvie, Voiry, Damien, Landois, Périne, Jean-Manuel Decams

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Conductive TiN thin films grown by plasma-enhanced atomic layer deposition: Effects of N-sources and thermal treatments von Badie, Clémence, Tissot, Héloïse, Sciacca, Beniamino, Barr, Maïssa K., Bachmann, Julien, Vallée, Christophe, Gautier, Gaël, Defforge, Thomas, Astie, Vincent, Decams, Jean-Manuel, Bechelany, Mikhael, Santinacci, Lionel

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Growth of low doped monolayer graphene on SiC(0001) via sublimation at low argon pressure von Landois, Périne, Wang, Tianlin, Nachawaty, Abir, Bayle, Maxime, Decams, Jean-Manuel, Desrat, Wilfried, Zahab, Ahmed-Azmi, Jouault, Benoît, Paillet, Matthieu, Contreras, Sylvie

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Ni(111) Substrate Engineering for the Epitaxial Chemical Vapor Deposition Growth of Wrinkle-Free Multilayer Rhombohedral Boron Nitride Films von Tailpied, Laure, Andrieux-Ledier, Amandine, Fossard, Frédéric, Mérot, Jean-Sébastien, Decams, Jean-Manuel, Loiseau, Annick

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Integration of epitaxial LiNbO 3 thin films with silicon technology von Bartasyte, Ausrine, Oliveri, Stefania, Boujnah, Sondes, Margueron, Samuel, Bachelet, Romain, Saint-Girons, Guillaume, Albertini, David, Gautier, Brice, Boulet, Pascal, Nuta, Ioana, Blanquet, Elisabeth, Astié, Vincent, Decams, Jean-Manuel

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Heteroleptic Tin(IV) Aminoalkoxides and Aminofluoroalkoxides as MOCVD Precursors for Undoped and F-Doped SnO 2 Thin Films von Verchère, Alexandre, Mishra, Shashank, Jeanneau, Erwann, Guillon, Hervé, Decams, Jean-Manuel, Daniele, Stéphane

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Direct liquid injection pulsed-pressure MOCVD of large area MoS on Si/SiO von Astié, Vincent, Wasem Klein, Felipe, Makhlouf, Houssin, Paillet, Matthieu, Huntzinger, Jean-Roch, Sauvajol, Jean-Louis, Zahab, Ahmed-Azmi, Juillaguet, Sandrine, Contreras, Sylvie, Voiry, Damien, Landois, Périne, Decams, Jean-Manuel

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Direct liquid injection pulsed-pressure MOCVD of large area MoS 2 on Si/SiO 2 von Astié, Vincent, Wasem Klein, Felipe, Makhlouf, Houssin, Paillet, Matthieu, Huntzinger, Jean-Roch, Sauvajol, Jean-Louis, Zahab, Ahmed-Azmi, Juillaguet, Sandrine, Contreras, Sylvie, Voiry, Damien, Landois, Périne, Decams, Jean-Manuel

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Toward the Reproducible Growth of Graphene on Wide SiC Steps: A Study of the Geometric Properties of 4H-SiC (0001) Substrates von Paillet, Matthieu, Decams, Jean Manuel, Moret, Matthieu, Landois, Périne, Hrich, Haitham, Contreras, Sylvie, Briot, Olivier

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Development of hydrogen-selective TiOxNy-Pd composite membrane materials by atomic layer deposition von Badie, Clémence, Drobek, Martin, Julbe, Anne, Charmette, Christophe, Cartier, Jim, Decams, Jean-Manuel, Astie, Vincent, Bechelany, Mikhael, Santinacci, Lionel

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Determining by Raman spectroscopy the average thickness and N -layer-specific surface coverages of MoS 2 thin films with domains much smaller than the laser spot size von Wasem Klein, Felipe, Huntzinger, Jean-Roch, Astié, Vincent, Voiry, Damien, Parret, Romain, Makhlouf, Houssine, Juillaguet, Sandrine, Decams, Jean-Manuel, Contreras, Sylvie, Landois, Périne, Zahab, Ahmed-Azmi, Sauvajol, Jean-Louis, Paillet, Matthieu

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Integration of epitaxial LiNbO3thin films with silicon technology von Bartasyte, Ausrine, Oliveri, Stefania, Boujnah, Sondes, Margueron, Samuel, Bachelet, Romain, Saint-Girons, Guillaume, Albertini, David, Gautier, Brice, Boulet, Pascal, Nuta, Ioana, Blanquet, Elisabeth, Astié, Vincent, Decams, Jean-Manuel

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Analysis of ZrxSiyOz as High-k Dielectric for 4H-SiC MOSFETs von Decams, Jean Manuel, Montserrat, Josep, Rebollo, José, Varghese, Aneesha, Godignon, Philippe, Cabello, Maria

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Rapid and Efficient Oxidation Process of SiC by In Situ Multiple RTP Steps von Camassel, Jean, Decams, Jean Manuel, Berthou, Maxime, Constant, Aurore, Godignon, Philippe, Camara, Nicolas

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