Solid-state decomposition of silicon carbide for growing ultra-thin heteroepitaxial graphite films von Charrier, A., Coati, A., Argunova, T., Thibaudau, F., Garreau, Y., Pinchaux, R., Forbeaux, I., Debever, J.-M., Sauvage-Simkin, M., Themlin, J.-M.

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Solid-state graphitization mechanisms of silicon carbide 6H–SiC polar faces von Forbeaux, I, Themlin, J.-M, Charrier, A, Thibaudau, F, Debever, J.-M

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High-temperature graphitization of the 6H-SiC (0001) face von Forbeaux, I., Themlin, J.-M., Debever, J.-M.

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The 3D unoccupied band structure of graphite by very-low-energy electron diffraction von Strocov, V.N., Blaha, P., Starnberg, H.I., Claessen, R., Debever, J.-M., Themlin, J.-M.

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The use of high resolution electron-energy-loss spectroscopy for refining the infrared optical constants of GaS, GaSe, and InSe von Yu, Li-Ming, Thiry, P.A., Degiovanni, A., Conard, Th, Leclerc, G., Caudano, R., Lambin, Ph, Debever, J.-M.

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Three-dimensional unoccupied band structure of graphite: Very-low-energy electron diffraction and band calculations von Strocov, V. N., Blaha, P., Starnberg, H. I., Rohlfing, M., Claessen, R., Debever, J.-M., Themlin, J.-M.

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Observation of Total and Partial Photon-Stimulated Desorption Yields of Neutral Atoms from Solid Ne under Selective Excitation in the Excitonic Range von Kloiber, T, Laasch, W, Zimmerer, G, Coletti, F, Debever, J. M

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Inverse-photoemission spectroscopy of electron irradiated epitaxial CaF2 on Si(111) von BOUZIDI, S, ANGOT, T, LANGLAIS, V, DEBEVER, J.-M, SPORKEN, R, LONGUEVILLE, J. L, THIRY, P. A

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Many-body effects in the electronic structure of Sn/Si(111)-α-√3 von CHARRIER, A, PEREZ, R, THIBAUDAU, F, DEBEVER, J-M, ORTEGA, J, FLORES, F, THEMLIN, J-M

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C60 growth on Si(100), GaSe(0001) and GeS(001): Influence of the substrate on the film crystallinity von Gensterblum, G., Yu, L. -M., Pireaux, J. -J., Thiry, P. A., Caudano, R., Themlin, J. -M., Bouzidi, S., Coletti, F., Debever, J. -M.

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Time and spectrally resolved luminescence and relaxation processes in solid neon von COLETTI, F, DEBEVER, J. M, ZIMMERER, G

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Conduction-band dispersion in heteroepitaxial C60 von THEMLIN, J.-M, BOUZIDI, S, COLETTI, F, DEBEVER, J.-M, GENSTERBLUM, G, THIRY, P. A, PIREAUX, J.-J

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Effet laser dans le CdS par bombardement électronique von La Guillaume, C. Benoit à, Debever, J.-M.

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Inverse photoemission of GaSe von Coletti, F., Hafsi, R., Debever, J.M., Chevy, A.

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The formation of the epitaxial CaF2/Si(111) interface investigated by k-resolved inverse photoemission spectroscopy von BOUZIDI, S, COLETTI, F, DEBEVER, J. M, LONGUEVILLE, J. L, THIRY, P. A

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Conduction-bands asymmetry of Si(111) revealed by inverse photoemission von Bouzidi, S., Coletti, F., Debever, J.M., Thiry, P.A., Dumas, P., Chabal, Y.J.

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Surface or Bulk Location of Self-Trapped Excitons in Rare Gas Solids: Characterization via Luminescence von Coletti, F, Debever, J M, Hourmatallah, A

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Intrinsic valence and conduction bands of Si(111)-1×1 von He, Y., Bouzidi, S., Han, B. -Y., Yu, L. -M., Thiry, P. A., Caudano, R., Debever, J. -M.

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Unoccupied surface state on the (√3 × √3) R30° of 6H-SiC(0001) von Themlin, J.-M, Forbeaux, I, Langlais, V, Belkhir, H, Debever, J.-M

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Inverse-photoemission spectroscopy of the unreconstructed, ideally H-terminated Si(111) surface von BOUZIDI, S, COLETTI, F, DEBEVER, J. M, THIRY, P. A, DUMAS, P, CHABAL, Y. J

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