Gas Immersion Laser Doping for superconducting nanodevices von Chiodi, F., Grockowiak, A., Duvauchelle, J.E., Fossard, F., Lefloch, F., Klein, T., Marcenat, C., Débarre, D.

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Absence of boron aggregates in superconducting silicon confirmed by atom probe tomography von Hoummada, K., Dahlem, F., Kociniewski, T., Boulmer, J., Dubois, C., Prudon, G., Bustarret, E., Courtois, H., Débarre, D., Mangelinck, D.

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Thickness dependence of the superconducting critical temperature in heavily doped Si:B epilayers von Grockowiak, A., Klein, T., Cercellier, H., Lévy-Bertrand, F., Blase, X., Kačmarčik, J., Kociniewski, T., Chiodi, F., Débarre, D., Prudon, G., Dubois, C., Marcenat, C.

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Simple characterisation of a deformable mirror inside a high numerical aperture microscope using phase diversity von DÉBARRE, D., VIEILLE, T., BEAUREPAIRE, E.

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Superconductivity in doped cubic silicon von Bustarret, E., Marcenat, C., Achatz, P., Kačmarčik, J., Lévy, F., Huxley, A., Ortéga, L., Bourgeois, E., Blase, X., Débarre, D., Boulmer, J.

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Kinetics of Ge growth at low temperature on Si(001) by ultrahigh vacuum chemical vapor deposition von Halbwax, M., Bouchier, D., Yam, V., Débarre, D., Nguyen, Lam H., Zheng, Y., Rosner, P., Benamara, M., Strunk, H. P., Clerc, C.

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Evolution of the liquid/solid interface roughness in Si1-xGex layers processed by nanosecond laser annealing von Demoulin, R., Daubriac, R., Kerdilès, S., Dagault, L., Adami, O., Ricciarelli, D., Hartmann, J.-M., Chiodi, F., Mio, A.M., Opprecht, M., Scheid, E., Alba, P.Acosta, Débarre, D., Magna, A.La, Cristiano, F.

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Nanoscale concentration and strain distribution in pseudomorphic films Si1−xGex/Si processed by pulsed laser induced epitaxy von Vincent, L., Fossard, F., Kociniewski, T., Largeau, L., Cherkashin, N., Hÿtch, M.J., Debarre, D., Sauvage, T., Claverie, A., Boulmer, J., Bouchier, D.

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Room temperature magneto-optic effect in silicon light-emitting diodes von Chiodi, F., Bayliss, S. L., Barast, L., Débarre, D., Bouchiat, H., Friend, R. H., Chepelianskii, A. D.

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Nanosecond laser annealing: Impact on superconducting silicon on insulator monocrystalline epilayers von Baron, Y., Lábár, J. L., Lequien, S., Pécz, B., Daubriac, R., Kerdilès, S., Acosta Alba, P., Marcenat, C., Débarre, D., Lefloch, F., Chiodi, F.

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Proximity-induced superconductivity in all-silicon superconductor /normal-metal junctions von Chiodi, F., Duvauchelle, J.-E., Marcenat, C., Débarre, D., Lefloch, F.

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Enhanced photoluminescence of heavily n -doped germanium von El Kurdi, M., Kociniewski, T., Ngo, T.-P., Boulmer, J., Débarre, D., Boucaud, P., Damlencourt, J. F., Kermarrec, O., Bensahel, D.

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Strongly Nonlinear Superconducting Silicon Resonators von Bonnet, P., Chiodi, F., Flanigan, D., Delagrange, R., Brochu, N., Débarre, D., le Sueur, H.

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Optical and electrical properties of laser doped Si:B in the alloy range von Bhaduri, A., Kociniewski, T., Fossard, F., Boulmer, J., Débarre, D.

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UHV-CVD growth and annealing of thin fully relaxed Ge films on (0 0 1)Si von Halbwax, M., Rouviere, M., Zheng, Y., Debarre, D., Nguyen, Lam H., Cercus, J-L., Clerc, C., Yam, V., Laval, S., Cassan, E., Bouchier, D.

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Viscous flow and ablation pressure phenomena in nanosecond UV laser irradiation of polymers von TOKAREV, V. N, LAZARE, S, BELIN, C, DEBARRE, D

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Silicon superconducting quantum interference device von Duvauchelle, J. E., Francheteau, A., Marcenat, C., Chiodi, F., Débarre, D., Hasselbach, K., Kirtley, J. R., Lefloch, F.

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Highly doped Si and Ge formed by GILD (gas immersion laser doping); from GILD to superconducting silicon von Cammilleri, D., Fossard, F., Débarre, D., Tran Manh, C., Dubois, C., Bustarret, E., Marcenat, C., Achatz, P., Bouchier, D., Boulmer, J.

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Localized laser thermal annealing of nanometric SiGe layers protected by a dielectric Bragg mirror von Cammilleri, D., Fossard, F., Halbwax, M., Manh, C. Tran, Yam, N., Débarre, D., Boulmer, J., Bouchier, D.

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Laser doping for ohmic contacts in n-type Ge von Chiodi, F., Chepelianskii, A. D., Gardès, C., Hallais, G., Bouchier, D., Débarre, D.

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