A Comparison of the Performance and Stability of ZnO-TFTs With Silicon Dioxide and Nitride as Gate Insulators von Cross, R. B. M., De Souza, Maria Merlyne, Deane, Steve C., Young, Nigel D.

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Stability of plasma deposited thin film transistors — comparison of amorphous and microcrystalline silicon von Wehrspohn, R.B., Deane, S.C., French, I.D., Powell, M.J.

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Effect of amorphous silicon material properties on the stability of thin film transistors: evidence for a local defect creation model von Wehrspohn, R.B., Deane, S.C., French, I.D., Powell, M.J.

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Instability mechanisms in amorphous silicon thin film transistors and the role of the defect pool von Powell, M.J., Van Berkel, C, Deane, S.C.

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Nature of metastable and stable dangling bond defects in hydrogenated amorphous silicon von Powell, M.J, Wehrspohn, R.B, Deane, S.C

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Defect creation kinetics in amorphous silicon thin film transistors von Wehrspohn, R.B., Deane, S.C., Powell, M.J.

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Active matrix device von S.C. DEANE

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Method for manufacturing active substrate von S.C. DEANE

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Method for manufacturing active plate von S.C. DEANE

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Local hydrogen reactions of H2 in a-Si:H von Robertson, J, Chen, C.W, Powell, M.J, Deane, S.C

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The relationship between hydrogen and electronic defects in amorphous silicon von Deane, S.C., Powell, M.J.

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Active plate von S.C. DEANE

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Active matrix display substrate von S.C. DEANE

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Active matrix device von S.C. DEANE

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Liquid crystal displays von S.C. DEANE

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Physics of a-Si:H switching diodes von van Berkel, C., Powell, M.J., Deane, S.C.

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Defect-pool model parameters for amorphous silicon derived from field-effect measurements von Deane, S.C., Powell, M.J.

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AKTIVMATRIX-ANZEIGEVORRICHTUNGEN von DEANE, S.C, HECTOR, JASON R

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ACTIVE MATRIX DISPLAY DEVICES von DEANE, S.C, HECTOR, JASON R

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Thin film transistors and method of manufacture von C.J. CURLING, S.C. DEANE

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