Gate-self-aligned p-channel germanium MISFETs von Jackson, T.N., Ransom, C.M., DeGelormo, J.F.

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Gate-self-aligned n-channel and p-channel germanium MOSFETs von Ransom, C.M., Jackson, T.N., DeGelormo, J.F.

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High-transconductance InGaAs/InAlAs SISFETs von Jackson, T.N., Solomon, P.M., Tischler, M.A., Pettit, G.D., Canora, F.J., DeGelormo, J.F., Bucchignano, J.J., Wind, S.J.

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Gate-Self-Aligned N-Channel and P-Channel Germanium Mosfets von Ransom, C.M., Jackson, T.N., DeGelormo, J.F.

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A new low-voltage Si-compatible electroluminescent device von Robbins, D.J., Falcony, C., DiMaria, D.J., Dong, D.W., DeGelormo, J.F., Chang, I.F., Dove, D.B.

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High-speed, low-voltage complementary heterostructure FET circuit technology von Kiehl, R.A., Yates, J., Palmateer, L.F., Wright, S.L., Frank, D.J., Jackson, T.N., Degelormo, J.F., Fleischman, A.J.

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High-Transconductance Ingaas/Inaias Sisfets von Jackson, T.N., Solomon, P.M., Tischler, M.A., Pettit, G.D., Canora, F.J., DeGelormo, J.F., Bucchignano, J.J., Wind, S.J.

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