Advanced thin-film silicon-on-sapphire technology: microwave circuit applications von Johnson, R.A., de la Houssaye, P.R., Chang, C.E., Pin-Fan Chen, Wood, M.E., Garcia, G.A., Lagnado, I., Asbeck, P.M.

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Integration of Si and SiGe with Al2O3 (sapphire) von LAGNADO, I, DE LA HOUSSAYE, P. R

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Microwave performance of optically fabricated T-gate thin film silicon-on-sapphire based MOSFET's von de la Houssaye, P.R., Chang, C.E., Offord, B., Imthurn, G., Johnson, R., Asbeck, P.M., Garcia, G.A., Lagnado, I.

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Comparative Hall mobilities of ion implanted boron and implanted carbon plus boron in insulating diamond von HEWETT, C. A, DE LA HOUSSAYE, P. R, ROSER, M, ZEIDLER, J. R, WILSON, R. G

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SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHz f sub(max) von Koester, S J, Hammond, R, Chu, JO, Mooney, P M, Ott, JA, Perraud, L, Jenkins, KA, Webster, C S, Lagnado, I, de la Houssaye, PR

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SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHz fmax von Koester, S.J., Hammond, R., Chu, J.O., Mooney, P.M., Ott, J.A., Perraud, L., Jenkins, K.A., Webster, C.S., Lagnado, I., de la Houssaye, P.R.

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Integration of Si and SiGe with Al sub(2)O sub(3) (sapphire) von Lagnado, I, De la Houssaye, P R

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A 2.4-GHz silicon-on-sapphire CMOS low-noise amplifier von Johnson, R.A., Chang, C.E., de la Houssaye, P.R., Wood, M.E., Garcia, G.A., Asbeck, P.M., Lagnado, I.

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Demonstration of Y1Ba2Cu3O7-δ and complementary metal-oxide-semiconductor device fabrication on the same sapphire substrate von BURNS, M. J, DE LA HOUSSAYE, P. R, RUSSELL, S. D, GARCIA, G. A, CLAYTON, S. R, RUBY, W. S, LEE, L. P

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Demonstration of Y1Ba2Cu3O(7-delta) and complementary metal-oxide-semiconductor device fabrication on the same sapphire substrate von Burns, M. J., De La Houssaye, P. R., Russell, S. D., Garcia, G. A., Clayton, S. R., Ruby, W. S., Lee, L. P.

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A 26.5 GHz silicon MOSFET 2:1 dynamic frequency divider von Wetzel, M., Shi, L., Jenkins, K.A., de la Houssaye, P.R., Taur, Y., Asbeck, P.M., Lagnado, I.

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SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHzf(max) von Koester, S J, Hammond, R, Chu, J O, Mooney, P M, Ott, J A, Perraud, L, Jenkins, K A, Webster, C S, Lagnado, I, de la Houssaye, P R

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Electron saturation velocity variation in InGaAs and GaAs channel MODFET's for gate lengths to 550 Å von DE LA HOUSSAYE, P. R, ALLEE, D. R, PAO, Y. C, SCHLOM, D. G, HARRIS, J. S. JR, PEASE, R. F. W

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Silicon-on-sapphire for RF Si systems 2000 von Lagnado, I., de la Houssaye, P.R., Dubbelday, W.B., Koester, S.J., Hammond, R., Chu, J.O., Ott, J.A., Mooney, P.M., Perraud, L., Jenkins, K.A.

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The effects of microcrystalline structure on the photoluminescence of porous silicon-on-sapphire von Russell, S. D., Dubbelday, W. B., Georgief, P., Shimabukuro, R. L., de la Houssaye, P. R.

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High-mobility fully depleted thin-film SOS MOSFET's von Roser, M., Clayton, S.R., de la Houssaye, P.R., Garcia, G.A.

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Demonstration of monolithic co-fabrication of Y(1)Ba(2 )Cu(3)O(7-delta) and CMOS devices on the same sapphire substrate von de la Houssaye, P R, Burns, M J, Ruby, W J, Russell, S D, Clayaton, S R, Garcia, G A, Lee, L P

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Microwave characterization of sub-micron n- and p-channel MOSFETs fabricated with thin film Silicon-on-Sapphire von Chang, C.E., Asbeck, P.M., de la Houssaye, P.R., Imthurn, G., Garcia, G.A., Lagnado, I.

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Silicon...Beyond Silicon: Beginning of the Ed or End of the Beginning von Lagnado, J, de la Houssaye, P R

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Electron saturation velocity variation in InGaAs and GaAs channelMODFETs for gate length to 550 A von de la Houssaye, P R, Allee, D R, Pao, Y, Schlom, D G, Harris, J S, Pease, R F W

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