Dynamic Commercialization Strategies for Disruptive Technologies: Evidence from the Speech Recognition Industry von Marx, Matt, Gans, Joshua S., Hsu, David H.

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Stereotyping and Difference: Planned Parenthood v. Casey and the Future of Sex Discrimination Law von Gans, David H.

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Phonon scattering in strained transition layers for GaN heteroepitaxy von Cho, Jungwan, Li, Yiyang, Hoke, William E., Altman, David H., Asheghi, Mehdi, Goodson, Kenneth E.

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"We Do Not Want to Be Hunted" von David H. Gans

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On the accurate determination of absorption coefficient from reflectanceand transmittance measurements: Application to Fe-doped GaN von Look, David C., Leach, Jacob H.

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Thermal conductivity of GaN, GaN 71 , and SiC from 150 K to 850 K von Zheng, Qiye, Li, Chunhua, Rai, Akash, Leach, Jacob H., Broido, David A., Cahill, David G.

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The Impact of Uncertain Intellectual Property Rights on the Market for Ideas: Evidence from Patent Grant Delays von Gans, Joshua S, Hsu, David H, Stern, Scott

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Effectors of biotrophic fungi and oomycetes: pathogenicity factors and triggers of host resistance von Dodds, Peter N., Rafiqi, Maryam, Gan, Pamela H. P., Hardham, Adrienne R., Jones, David A., Ellis, Jeffrey G.

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Reproductive Originalism: Why the Fourteenth Amendment's Original Meaning Protects the Right to Abortion von Gans, David H.

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Religious Liberties for Corporations? Hobby Lobby, the Affordable Care Act, and the Constitution David H Gans and Ilya Shapiro Palgrave Macmillan, New York, 2014, vi + 80 pp (hardback £47) ISBN: 978-1-137-48467-3; (paperback £45) ISBN: 978-1-349-50353-7 von Copp, Stephen F

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Photo-Hall-effect study of excitation and recombination in Fe-doped GaN von Look, David C., Leach, Jacob H., Metzger, Robert

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High thermal conductivity and thermal boundary conductance of homoepitaxially grown gallium nitride (GaN) thin films von Koh, Yee Rui, Hoque, Md Shafkat Bin, Ahmad, Habib, Olson, David H., Liu, Zeyu, Shi, Jingjing, Wang, Yekan, Huynh, Kenny, Hoglund, Eric R., Aryana, Kiumars, Howe, James M., Goorsky, Mark S., Graham, Samuel, Luo, Tengfei, Hite, Jennifer K., Doolittle, W. Alan, Hopkins, Patrick E.

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In situ pendeoepitaxy of GaN using heteroepitaxial AlGaN∕GaN cracks von Moon, Y. T., Liu, C., Xie, J., Ni, X., Fu, Y., Morkoç, H., Zhou, Lin, Smith, David J.

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THE UNITARY FOURTEENTH AMENDMENT von Gans, David H

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Thermal conductivity of GaN, 71GaN, and SiC from 150 K to 850 K von Zheng, Qiye, Li, Chunhua, Rai, Akash, Leach, Jacob H., Broido, David A., Cahill, David G.

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Low Thermal Resistances at GaN-SiC Interfaces for HEMT Technology von Jungwan Cho, Bozorg-Grayeli, E., Altman, D. H., Asheghi, M., Goodson, K. E.

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High-Power Wire Bonded GaN Rectifier for Wireless Power Transmission von Joseph, Sumin David, Hsu, Shawn S. H., Alieldin, Ahmed, Song, Chaoyun, Liu, Yeke, Huang, Yi

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Growth and properties of m-plane GaN on m-plane sapphire by metalorganic chemical vapor deposition von Paduano, Qing S., Weyburne, David W., Tomich, David H.

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Properties of YMnO3 self-assembled nanocrystalline prisms on GaN von Keenan, Cameron, Chandril, Sandeep, Myers, Thomas H., Lederman, David, Ramos-Moore, E., Cabrera, A. L.

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Ti/Al/Ni/Au Ohmic contacts for AlInN/AlN/GaN-based heterojunction field-effect transistors von Zhou, Lin, Leach, Jacob H., Ni, Xianfeng, Morkoç, Hadis, Smith, David J.

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