An Enhanced Color Shift Keying Modulation Scheme for High-Speed Wireless Visible Light Communications von Singh, Ravinder, O'Farrell, Timothy, David, John P. R.

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Anomalous excess noise behavior in thick Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes von Lewis, Harry I. J., Jin, Xiao, Guo, Bingtian, Lee, Seunghyun, Jung, Hyemin, Kodati, Sri Harsha, Liang, Baolai, Krishna, Sanjay, Ong, Duu Sheng, Campbell, Joe C., David, John P. R.

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Bismuth incorporation and the role of ordering in GaAsBi/GaAs structures von Reyes, Daniel F, Bastiman, Faebian, Hunter, Chris J, Sales, David L, Sanchez, Ana M, David, John PR, González, David

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Sb-Based Low-Noise Avalanche Photodiodes von Campbell, Joe C., David, John P. R., Bank, Seth R.

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Valence band engineering of GaAsBi for low noise avalanche photodiodes von Liu, Yuchen, Yi, Xin, Bailey, Nicholas J., Zhou, Zhize, Rockett, Thomas B. O., Lim, Leh W., Tan, Chee H., Richards, Robert D., David, John P. R.

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Impact Ionization in InAs Electron Avalanche Photodiodes von Marshall, Andrew R J, David, John P R, Chee Hing Tan

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Avalanche Multiplication and Excess Noise in InAs Electron Avalanche Photodiodes at 77 K von Marshall, A R J, Vines, P, Ker, P J, David, J P R, Chee Hing Tan

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Impact Ionization Coefficients in 4H-SiC by Ultralow Excess Noise Measurement von Green, J. E., Wei Sun Loh, Marshall, A. R. J., Ng, B. K., Tozer, R. C., David, J. P. R., Soloviev, S. I., Sandvik, P. M.

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Relating the Experimental Ionization Coefficients in Semiconductors to the Nonlocal Ionization Coefficients von Jeng Shiuh Cheong, Hayat, Majeed M., Xinxin Zhou, David, John P. R.

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Low excess noise and high quantum efficiency avalanche photodiodes for beyond 2 µm wavelength detection von Jung, Hyemin, Lee, Seunghyun, Jin, Xiao, Liu, Yifan, Ronningen, Theodore. J., Grein, Christopher. H., David, John. P. R., Krishna, Sanjay

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High-Gain InAs Planar Avalanche Photodiodes von White, Benjamin S., Sandall, Ian C., Zhou, Xinxin, Krysa, Andrey, McEwan, Kenneth, David, John P. R., Chee Hing Tan

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Extremely low excess noise and high sensitivity AlAs0.56Sb0.44 avalanche photodiodes von Yi, Xin, Xie, Shiyu, Liang, Baolai, Lim, Leh W., Cheong, Jeng S., Debnath, Mukul C., Huffaker, Diana L., Tan, Chee H., David, John P. R.

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Temperature Dependence of Leakage Current in InAs Avalanche Photodiodes von Pin Jern Ker, Marshall, A. R. J., Krysa, A. B., David, J. P. R., Chee Hing Tan

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Formation of Tetragonal InBi Clusters in InAsBi/InAs(100) Heterostructures Grown by Molecular Beam Epitaxy von Dominguez, Lara, Reyes, Daniel F, Bastiman, Faebian, Sales, David L, Richards, R. D, Mendes, D, David, John P. R, Gonzalez, David

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Absorption Coefficient of Bulk III-V Semiconductor Materials: A Review on Methods, Properties and Future Prospects von Lee, Hui Jing, Gamel, Mansur Mohammed Ali, Ker, Pin Jern, Jamaludin, Md Zaini, Wong, Yew Hoong, David, John P. R.

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Weibull-Fréchet random path length model for avalanche gain and noise in photodiodes von Ong, Duu Sheng, Tan, Ai Hui, Choo, Kan Yeep, Yeoh, Keat Hoe, David, John P R

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Vector Coding Optical Wireless Links von Singh, Ravinder, O'Farrell, Timothy, Biagi, Mauro, Penty, Richard V., David, John P. R.

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Very low excess noise Al0.75Ga0.25As0.56Sb0.44 avalanche photodiode von Jin, Xiao, Lewis, Harry I J, Yi, Xin, Xie, Shiyu, Liang, Baolai, Tian, Qingyu, Huffaker, Diana L, Tan, Chee Hing, David, John P R

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Optimized Multi-Primary Modulation for Visible Light Communication von Bui, Thai-Chien, Singh, Ravinder, O'Farrell, Timothy, Scarano, Gaetano, David, John P. R., Biagi, Mauro

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An InGaAlAs-InGaAs Two-Color Photodetector for Ratio Thermometry von Xinxin Zhou, Hobbs, Matthew J., White, Benjamin S., David, John P. R., Willmott, Jon R., Chee Hing Tan

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