Photovoltaic characterisation of GaAsBi/GaAs multiple quantum well devices von Richards, R.D., Mellor, A., Harun, F., Cheong, J.S., Hylton, N.P., Wilson, T., Thomas, T., Roberts, J.S., Ekins-Daukes, N.J., David, J.P.R.

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Localization effects and band gap of GaAsBi alloys von Mohmad, A. R., Bastiman, F., Hunter, C. J., Richards, R. D., Sweeney, S. J., Ng, J. S., David, J. P. R., Majlis, B. Y.

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Influence of growth conditions on the structural and opto-electronic quality of GaAsBi von Rockett, T.B.O., Richards, R.D., Gu, Y., Harun, F., Liu, Y., Zhou, Z., David, J.P.R.

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Improved performance of 1.3μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer von Liu, H. Y., Sellers, I. R., Badcock, T. J., Mowbray, D. J., Skolnick, M. S., Groom, K. M., Gutiérrez, M., Hopkinson, M., Ng, J. S., David, J. P. R., Beanland, R.

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Absorption coefficients in AlGaInP lattice-matched to GaAs von Cheong, J.S., Baharuddin, A.N.A.P., Ng, J.S., Krysa, A.B., David, J.P.R.

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Photovoltaic characterisation of GaAsBi/GaAs multiple quantum well devices von Richards, RD, Mellor, A, Harun, F, Cheong, JS, Hylton, NP, Wilson, T, Thomas, T, Roberts, JS, Ekins-Daukes, NJ, David, JPR

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Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth von Bastiman, F., Mohmad, A.R.B., Ng, J.S., David, J.P.R, Sweeney, S.J.

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Bi incorporation in GaAs(100)-21 and 43 reconstructions investigated by RHEED and STM von Bastiman, F, Cullis, A G, David, JPR, Sweeney, S J

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Avalanche Noise Characteristics in Submicron InP Diodes von Tan, L.J.J., Ng, J.S., Tan, C.H., David, J.P.R.

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Extremely Low Excess Noise in InAs Electron Avalanche Photodiodes von Marshall, A.R.J., Chee Hing Tan, Steer, M.J., David, J.P.R.

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Temperature dependence of AlGaAs soft X-ray detectors von Barnett, A.M., Bassford, D.J., Lees, J.E., Ng, J.S., Tan, C.H., David, J.P.R.

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Temperature Dependence of Impact Ionization in Submicrometer Silicon Devices von Massey, D.J., David, J.P.R., Rees, G.J.

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Impact Ionization Coefficients in 4H-SiC von Loh, W.S., Ng, B.K., Ng, J.S., Soloviev, S.I., Ho-Young Cha, Sandvik, P.M., Johnson, C.M., David, J.P.R.

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Room-temperature 1.6μm light emission from InAs∕GaAs quantum dots with a thin GaAsSb cap layer von Liu, H. Y., Steer, M. J., Badcock, T. J., Mowbray, D. J., Skolnick, M. S., Suarez, F., Ng, J. S., Hopkinson, M., David, J. P. R.

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Design and performance of an InGaAs-InP single-photon avalanche diode detector von Pellegrini, S., Warburton, R.E., Tan, L.J.J., Jo Shien Ng, Krysa, A.B., Groom, K., David, J.P.R., Cova, S., Robertson, M.J., Buller, G.S.

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Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots von Fry, P W, Itskevich, I E, Mowbray, D J, Skolnick, M S, Finley, J J, Barker, J A, O'Reilly, E P, Wilson, L R, Larkin, I A, Maksym, P A, Hopkinson, M, Al-Khafaji, M, David, J P, Cullis, A G, Hill, G, Clark, J C

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Requirements for a GaAsBi 1 eV sub-cell in a GaAs-based multi-junction solar cell von Thomas, T, Mellor, A, Hylton, NP, Fuehrer, M, Alonso-Alvarez, D, Braun, A, Ekins-Daukes, NJ, David, JPR, Sweeney, SJ

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Material Considerations for Avalanche Photodiodes von David, J.P.R., Tan, C.H.

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A transimpedance amplifier for excess noise measurements of high junction capacitance avalanche photodiodes von Green, James E, David, John P R, Tozer, Richard C

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Avalanche Multiplication in InAlAs von Goh, Y. L., Jones, S. K., Massey, D. J., Marshall, A. R. J., Ng, J. S., Tan, C. H., Ng, W. K., Rees, G. J., Hopkinson, M., David, J. P. R.

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