Further Studies on the Effect of SiNx Refractive Index and Emitter Sheet Resistance on Potential-Induced Degradation von Jaewon Oh, Dauksher, Bill, Bowden, Stuart, Tamizhmani, Govindasamy, Hacke, Peter, D'Amico, John

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Characterization and comparison of silicon nitride films deposited using two novel processes von Sharma, Vivek, Bailey, Adam, Dauksher, Bill, Tracy, Clarence, Bowden, Stuart, O’Brien, Barry

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A novel low-temperature method to fabricate MEMS resonators using PMGI as a sacrificial layer von Young, Steven, Weston, Don, Dauksher, Bill, Mancini, David, Pacheco, Sergio, Zurcher, Peter, Miller, Mel

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Characterization and comparison of silicon nitride films deposited using two novel processes von Sharma, V., Bailey, A., Dauksher, B., Tracy, C., Bowden, S., O'Brien, B.

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Determination of charged state density at the interface between amorphous silicon and crystalline silicon by lateral conductance von Ghosh, Kunal, Tracy, Clarence J, Dauksher, Bill, Herasimenka, Stanislau, Honsberg, Christiana, Bowden, Stuart

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