Enhanced ferroelectricity in ultrathin films grown directly on silicon von Cheema, Suraj S., Kwon, Daewoong, Shanker, Nirmaan, dos Reis, Roberto, Hsu, Shang-Lin, Xiao, Jun, Zhang, Haigang, Wagner, Ryan, Datar, Adhiraj, McCarter, Margaret R., Serrao, Claudy R., Yadav, Ajay K., Karbasian, Golnaz, Hsu, Cheng-Hsiang, Tan, Ava J., Wang, Li-Chen, Thakare, Vishal, Zhang, Xiang, Mehta, Apurva, Karapetrova, Evguenia, Chopdekar, Rajesh V, Shafer, Padraic, Arenholz, Elke, Hu, Chenming, Proksch, Roger, Ramesh, Ramamoorthy, Ciston, Jim, Salahuddin, Sayeef

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One Nanometer HfO2‐Based Ferroelectric Tunnel Junctions on Silicon von Cheema, Suraj S., Shanker, Nirmaan, Hsu, Cheng‐Hsiang, Datar, Adhiraj, Bae, Jongho, Kwon, Daewoong, Salahuddin, Sayeef

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One Nanometer HfO2‐Based Ferroelectric Tunnel Junctions on Silicon (Adv. Electron. Mater. 6/2022) von Cheema, Suraj S., Shanker, Nirmaan, Hsu, Cheng‐Hsiang, Datar, Adhiraj, Bae, Jongho, Kwon, Daewoong, Salahuddin, Sayeef

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One Nanometer HfO 2 ‐Based Ferroelectric Tunnel Junctions on Silicon von Cheema, Suraj S., Shanker, Nirmaan, Hsu, Cheng‐Hsiang, Datar, Adhiraj, Bae, Jongho, Kwon, Daewoong, Salahuddin, Sayeef

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One Nanometer HfO 2 ‐Based Ferroelectric Tunnel Junctions on Silicon (Adv. Electron. Mater. 6/2022) von Cheema, Suraj S., Shanker, Nirmaan, Hsu, Cheng‐Hsiang, Datar, Adhiraj, Bae, Jongho, Kwon, Daewoong, Salahuddin, Sayeef

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One Nanometer HfO2-Based Ferroelectric Tunnel Junctions on Silicon von Cheema, Suraj S., Shanker, Nirmaan, Hsu, Cheng‐Hsiang, Datar, Adhiraj, Bae, Jongho, Kwon, Daewoong, Salahuddin, Sayeef

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One Nanometer HfO 2 ‐Based Ferroelectric Tunnel Junctions on Silicon von Cheema, Suraj S., Shanker, Nirmaan, Hsu, Cheng‐Hsiang, Datar, Adhiraj, Bae, Jongho, Kwon, Daewoong, Salahuddin, Sayeef

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Enhanced ferroelectricity in ultrathin films grown directly on silicon (Expression of Concern of Vol 532, Pg 210, 2016) von Cheema, Suraj S., Kwon, Daewoong, Shanker, Nirmaan, dos Reis, Roberto, Hsu, Shang-Lin, Xiao, Jun, Zhang, Haigang, Wagner, Ryan, Datar, Adhiraj, McCarter, Margaret R., Serrao, Claudy R., Yadav, Ajay K., Karbasian, Golnaz, Hsu, Cheng-Hsiang, Tan, Ava J., Wang, Li-Chen, Thakare, Vishal, Zhang, Xiang, Mehta, Apurva, Karapetrova, Evguenia, Chopdekar, Rajesh, Shafer, Padraic, Arenholz, Elke, Hu, Chenming, Proksch, Roger, Ramesh, Ramamoorthy, Ciston, Jim, Salahuddin, Sayeef

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Publisher Correction: Enhanced ferroelectricity in ultrathin films grown directly on silicon von Cheema, Suraj S., Kwon, Daewoong, Shanker, Nirmaan, dos Reis, Roberto, Hsu, Shang-Lin, Xiao, Jun, Zhang, Haigang, Wagner, Ryan, Datar, Adhiraj, McCarter, Margaret R., Serrao, Claudy R., Yadav, Ajay K., Karbasian, Golnaz, Hsu, Cheng-Hsiang, Tan, Ava J., Wang, Li-Chen, Thakare, Vishal, Zhang, Xiang, Mehta, Apurva, Karapetrova, Evguenia, Chopdekar, Rajesh V, Shafer, Padraic, Arenholz, Elke, Hu, Chenming, Proksch, Roger, Ramesh, Ramamoorthy, Ciston, Jim, Salahuddin, Sayeef

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PASS: An Asynchronous Probabilistic Processor for Next Generation Intelligence von Patel, Saavan, Canoza, Philip, Datar, Adhiraj, Lu, Steven, Garg, Chirag, Salahuddin, Sayeef

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PASS: An Asynchronous Probabilistic Processor for Next Generation Intelligence von Patel, Saavan, Canoza, Philip, Datar, Adhiraj, Lu, Steven, Garg, Chirag, Salahuddin, Sayeef

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One nanometer HfO$_2$-based ferroelectric tunnel junctions on silicon von Cheema, Suraj S, Shanker, Nirmaan, Hsu, Cheng-Hsiang, Datar, Adhiraj, Bae, Jongho, Kwon, Daewoong, Salahuddin, Sayeef

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One nanometer HfO\(_2\)-based ferroelectric tunnel junctions on silicon von Cheema, Suraj S, Shanker, Nirmaan, Cheng-Hsiang Hsu, Datar, Adhiraj, Bae, Jongho, Kwon, Daewoong, Salahuddin, Sayeef

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