Optimizing online selling through an online-to-offline platform: strategic ramifications for local n stores von Taleizadeh, Ata Allah, Darabi, Ebrahim Salehi, Thaichon, Park

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Data-dependent half-select free GSRAM cell with word line write-assist and built-in read buffer schemes for use in PUFs-based IoT devices von Darabi, Abdolreza, Abiri, Ebrahim, Salehi, Mohammad Reza

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Single-sided gate-wrap-around CNTFET SRAM cell for utilization in reliable IoT-based platforms von Darabi, Abdolreza, Salehi, Mohammad Reza, Abiri, Ebrahim

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One‐sided 10T static‐random access memory cell for energy‐efficient and noise‐immune internet of things applications von Darabi, Abdolreza, Salehi, Mohammad Reza, Abiri, Ebrahim

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Single-End Half-Select Free Static RAM Cell Based on BWG CNFET Tri-value Buffer Gate Applicable in Highly Efficient IoT Platforms von Darabi, Abdolreza, Salehi, Mohammad Reza, Abiri, Ebrahim

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Optimized Gate Diffusion Input Method-Based Reversible Magnitude Arithmetic Unit Using Non-dominated Sorting Genetic Algorithm II von Abiri, Ebrahim, Darabi, Abdolreza, Salehi, Mohammad Reza, Sadeghi, Ayoub

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Wrap-Gate CNT-MOSFET Based SRAM Bit-Cell with Asymmetrical Ground Gating and Built-In Read-Assist Schemes for Application in Limited-Energy Environments von Darabi, Abdolreza, Salehi, Mohammad Reza, Abiri, Ebrahim

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A write bit-line free sub-threshold SRAM cell with fully half-select free feature and high reliability for ultra-low power applications von Karamimanesh, Mehrzad, Abiri, Ebrahim, Hassanli, Kourosh, Salehi, Mohammad Reza, Darabi, Abdolreza

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Newly energy-efficient SRAM bit-cell using GAA CNT-GDI method with asymmetrical write and built-in read-assist schemes for QR code-based multimedia applications von Darabi, Abdolreza, Salehi, Mohammad Reza, Abiri, Ebrahim

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A robust and write bit-line free sub-threshold 12T-SRAM for ultra low power applications in 14 nm FinFET technology von Karamimanesh, Mehrzad, Abiri, Ebrahim, Hassanli, Kourosh, Salehi, Mohammad Reza, Darabi, Abdolreza

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