Effect of the hydrogen bonding and content on the opto-electronic properties of radiofrequency magnetron sputtered hydrogenated amorphous silicon films von Daouahi, M, Ben Othmane, A, Zellama, K, Zeinert, A, Essamet, M, Bouchriha, H

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Effect of the hydrogen dilution on the short-range and intermediate-range-order in radiofrequency magnetron sputtered hydrogenated amorphous silicon films von Ben Othman, A., Daouahi, M., Henocque, J., Zellama, K., Bouchriha, H.

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Effect of light soaking and annealing on the stability of hydrogenated amorphous silicon films deposited using pure and highly helium diluted silane von Souffi, N, Daouahi, M, Chahed, L, Zellama, K, Roca i Cabarrocas, P

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Effect of the Nature of the Hydrogen Bonding on the Light-Induced Metastable Defects in Hydrogenated Amorphous Silicon Prepared by Radiofrequency Magnetron Sputtering von Daouahi, M., Ben Othman, A., Zellama, K., Chahed, L., Essamet, M., Bouchriha, H.

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Low-temperature deposition of weakly-stressed nanocrystalline silicon films by reactive magnetron sputtering von Ben Othman, A., Leconte, Y., Marie, P., Zellama, K., Goncalves, C., Portier, X., Daouahi, M., Bouchriha, H., Rizk, R.

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Effect of the hydrogen dilution on the local microstructure in hydrogenated amorphous silicon films deposited by radiofrequency magnetron sputtering von Daouahi, M., Zellama, K., Bouchriha, H., Elkaïm, P.

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Influence of the deposition conditions on the optoelectronic properties of R.F. magnetron sputtered a-Si:H films von Daouahi, M., Zellama, K., Elkaïm, P., Dixmier, J., Bouchriha, H.

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