Electroluminescence of SnO2∕p-Si heterojunction von Yuan, Zhizhong, Li, Dongsheng, Wang, Minghua, Chen, Peiliang, Gong, Daoren, Cheng, Peihong, Yang, Deren

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Electron Confinement and Hole Injection Improvement in InGaN/GaN Light-Emitting Diodes With Graded-Composition Last Quantum Barrier and Without Electron Blocking Layer von Cheng, Liwen, Wu, Shudong, Chen, Haitao, Gong, Daoren, Wei, Yuefeng

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Research on Potential Induced Degradation (PID) of PV Modules in Different Typical Climate Regions von Daoren, Gong, Yingnan, Chen, Gang, Sun, Wenjing, Wang, Zhenshuang, Ji

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Preparation of Monodispersed Copper Nanoparticles by an Environmentally Friendly Chemical Reduction von Li, Meijuan, Xiang, Kun, Luo, Guoqiang, Gong, Daoren, Shen, Qiang, Zhang, Lianmeng

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Optical properties of single-phase β-FeSi2 films fabricated by electron beam evaporation von Gong, Daoren, Li, Dongsheng, Yuan, Zhizhong, Wang, Minghua, Yang, Deren

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Influence of In2O3:SnO2 films at different sputtering power on efficiency and stability of heterojunction solar cells von Wang, Mengxiao, Wang, Guanghong, Gong, Wenbo, Cheng, Shangzhi, Zhao, Lei, Xu, Xiaohua, Gong, Daoren, Ye, Fei, Mo, Libin, Diao, Hongwei, Wang, Wenjing

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Influence of unintentional H2O introduction in sputtering chamber on ITO films and HJT solar cells von Wang, Mengxiao, Wang, Guanghong, Hu, Mengqi, Zhao, Lei, Xu, Xiaohua, Xiao, Jihong, Gong, Daoren, Yu, Changyue, Mo, Libin, Diao, Hongwei, Wang, Wenjing

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The effect of the curing process on illuminated annealing of silicon heterojunction solar cells von Cheng, Shangzhi, Jia, Xiaojie, Yang, Jinli, Zhou, Chunlan, Xin, Ke, Xiao, Jihong, Gong, Daoren, Zhou, Su, Wang, Wenjing

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Effects of defect, carrier concentration and annealing process on the photoluminescence of silicon pn diodes von Yuan, Zhizhong, Li, Dongsheng, Gong, Daoren, Wang, Minghua, Fan, Ruixin, Yang, Deren

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Densification of Mo alloys at 1473 K by adding Ni-Cu solid solution von Gong, D, Yang, Z, Shen, Q, Zhang, L

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Photoluminescence of Tb3+ doped SiNx films grown by plasma-enhanced chemical vapor deposition von Yuan, Zhizhong, Li, Dongsheng, Wang, Minghua, Chen, Peiliang, Gong, Daoren, Wang, Lei, Yang, Deren

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Optical properties of single-phase β-FeSi 2 films fabricated by electron beam evaporation von Gong, Daoren, Li, Dongsheng, Yuan, Zhizhong, Wang, Minghua, Yang, Deren

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Electroluminescence of Sn O 2 ∕ p - Si heterojunction von Yuan, Zhizhong, Li, Dongsheng, Wang, Minghua, Chen, Peiliang, Gong, Daoren, Cheng, Peihong, Yang, Deren

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Photoluminescence of Tb-doped SiNx films with different Si concentrations von Yuan, Zhizhong, Li, Dongsheng, Wang, Minghua, Gong, Daoren, Cheng, Peihong, Chen, Peiliang, Yang, Deren

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SOLDER STRIP AND PREPARATION METHOD THEREFOR, AND PHOTOVOLTAIC MODULE von GUO, Qi, GONG, Daoren, LUO, Ruizhi

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SOLDER STRIP AND PREPARATION METHOD THEREFOR, AND PHOTOVOLTAIC MODULE von GUO, Qi, GONG, Daoren, LUO, Ruizhi

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Photoluminescence of Tb3+-doped SiNx films with different Si concentrations von Yuan, Zhizhong, Li, Dongsheng, Wang, Minghua, Gong, Daoren, Cheng, Peihong, Chen, Peiliang, Yang, Deren

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Electron-beam-induced current evidence for room-temperature photoluminescence of silicon pn diode von Yuan, Zhizhong, Li, Dongsheng, Wang, Minghua, Gong, Daoren, Fan, Ruixin, Yang, Deren

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Photoluminescence of Tb 3 + doped Si N x films grown by plasma-enhanced chemical vapor deposition von Yuan, Zhizhong, Li, Dongsheng, Wang, Minghua, Chen, Peiliang, Gong, Daoren, Wang, Lei, Yang, Deren

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Photoluminescence of Tb{sup 3+} doped SiN{sub x} films grown by plasma-enhanced chemical vapor deposition von Yuan Zhizhong, Li Dongsheng, Wang Minghua, Chen Peiliang, Gong Daoren, Wang Lei, Yang Deren

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