Threading dislocations in n- and p-type 4H–SiC material analyzed by etching and synchrotron X-ray topography von Kallinger, B., Polster, S., Berwian, P., Friedrich, J., Müller, G., Danilewsky, A.N., Wehrhahn, A., Weber, A.-D.

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Dislocation dynamics and slip band formation in silicon: In-situ study by X-ray diffraction imaging von Danilewsky, A.N., Wittge, J., Croell, A., Allen, D., McNally, P., Vagovič, P., dos Santos Rolo, T., Li, Z., Baumbach, T., Gorostegui-Colinas, E., Garagorri, J., Elizalde, M.R., Fossati, M.C., Bowen, D.K., Tanner, B.K.

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White beam synchrotron topography using a high resolution digital X-ray imaging detector von Danilewsky, A.N., Rack, A., Wittge, J., Weitkamp, T., Simon, R., Riesemeier, H., Baumbach, T.

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Effect of surfactants on the growth and characterization of triglycine sulfate crystals von Ghane-Motlagh, R., Fammels, J., Danilewsky, A.N., Pelz, U., Woias, P.

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Anisotropic and temperature-dependent thermal conductivity of PbI 2 von Cröll, A., Tonn, J., Post, E., Böttner, H., Danilewsky, A.N.

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Anisotropic and temperature-dependent thermal conductivity of PbI2 von Cröll, A., Tonn, J., Post, E., Böttner, H., Danilewsky, A.N.

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The experimental station for white beam X-ray topography at the synchrotron light source ANKA, Karlsruhe von Simon, R., Danilewsky, A.N.

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Floating-zone and floating-solution-zone growth of GaSb under microgravity von Cröll, A, Kaiser, Th, Schweizer, M, Danilewsky, A.N, Lauer, S, Tegetmeier, A, Benz, K.W

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Removal of oxidic impurities for the growth of high purity lead iodide single crystals von Tonn, J., Matuchova, M., Danilewsky, A.N., Cröll, A.

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In-Operando X-ray diffraction imaging of thermal strains in fully packaged silicon devices von Tanner, B.K., Vijayaraghavan, R.K., Roarty, B., Danilewsky, A.N., McNally, P.J.

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Small-angle subgrain boundaries emanating from dislocation pile-ups in multicrystalline silicon studied with synchrotron white-beam X-ray topography von Oriwol, D., Carl, E.-R., Danilewsky, A.N., Sylla, L., Seifert, W., Kittler, M., Leipner, H.S.

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Synchrotron X-ray diffraction topography study of bonding-induced strain in silicon-on-insulator wafers von Lankinen, A., Tuomi, T.O., Kostamo, P., Jussila, H., Sintonen, S., Lipsanen, H., Tilli, M., Mäkinen, J., Danilewsky, A.N.

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The micro-imaging station of the TopoTomo beamline at the ANKA synchrotron light source von Rack, A., Weitkamp, T., Bauer Trabelsi, S., Modregger, P., Cecilia, A., dos Santos Rolo, T., Rack, T., Haas, D., Simon, R., Heldele, R., Schulz, M., Mayzel, B., Danilewsky, A.N., Waterstradt, T., Diete, W., Riesemeier, H., Müller, B.R., Baumbach, T.

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Czochralski growth of lead iodide single crystals: Investigations and comparison with the Bridgman method von Tonn, J., Danilewsky, A.N., Cröll, A., Matuchova, M., Maixner, J.

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B-Spline X-Ray Diffraction Imaging — Rapid non-destructive measurement of die warpage in ball grid array packages von Cowley, A., Ivankovic, A., Wong, C.S., Bennett, N.S., Danilewsky, A.N., Gonzalez, M., Cherman, V., Vandevelde, B., De Wolf, I., McNally, P.J.

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B-spline X-ray diffraction imaging - Rapid non-destructive measurement of die warpage in ball grid array packages von Cowley, A, Ivankovic, A, Wong, C.S, Bennett, N.S, Danilewsky, A.N, Gonzalez, M, Cherman, V, Vandevelde, B, De Wolf, Ingrid, McNally, P.J

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Influence of doping and non-stoichiometry on the quality of lead iodide for use in X-ray detection von Matuchova, M., Zdansky, K., Zavadil, J., Tonn, J., Abdul-Gader Jafar, Mousa M., Danilewsky, A.N., Cröll, A., Maixner, J.

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Observation of nano-indent induced strain fields and dislocation generation in silicon wafers using micro-Raman spectroscopy and white beam X-ray topography von Allen, D., Wittge, J., Zlotos, A., Gorostegui-Colinas, E., Garagorri, J., McNally, P.J., Danilewsky, A.N., Elizalde, M.R.

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Combined use of three-dimensional X-ray diffraction imaging and micro-Raman spectroscopy for the non-destructive evaluation of plasma arc induced damage on silicon wafers von Stopford, J., Allen, D., Aldrian, O., Morshed, M., Wittge, J., Danilewsky, A.N., McNally, P.J.

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Influence of mechanical defects on the crystal lattice of silicon von Jauß, T., Danilewsky, A.N., Wittge, J., Cröll, A., Garagorri, J., Elizalde, R. M., Allen, D., McNally, P.

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