Nondestructive X‐ray diffraction measurement of warpage in silicon dies embedded in integrated circuit packages von Tanner, B. K., Danilewsky, A. N., Vijayaraghavan, R. K., Cowley, A., McNally, P. J.

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Threading dislocations in n- and p-type 4H–SiC material analyzed by etching and synchrotron X-ray topography von Kallinger, B., Polster, S., Berwian, P., Friedrich, J., Müller, G., Danilewsky, A.N., Wehrhahn, A., Weber, A.-D.

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The geometry of catastrophic fracture during high temperature processing of silicon von Tanner, B. K., Garagorri, J., Gorostegui-Colinas, E., Elizalde, M. R., Bytheway, R., McNally, P. J., Danilewsky, A. N.

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Dislocation sources and slip band nucleation from indents on silicon wafers von Wittge, J., Danilewsky, A. N., Allen, D., McNally, P., Li, Z., Baumbach, T., Gorostegui-Colinas, E., Garagorri, J., Elizalde, M. R., Jacques, D., Fossati, M. C., Bowen, D. K., Tanner, B. K.

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Effect of surfactants on the growth and characterization of triglycine sulfate crystals von Ghane-Motlagh, R., Fammels, J., Danilewsky, A.N., Pelz, U., Woias, P.

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Dislocation dynamics and slip band formation in silicon: In-situ study by X-ray diffraction imaging von Danilewsky, A.N., Wittge, J., Croell, A., Allen, D., McNally, P., Vagovič, P., dos Santos Rolo, T., Li, Z., Baumbach, T., Gorostegui-Colinas, E., Garagorri, J., Elizalde, M.R., Fossati, M.C., Bowen, D.K., Tanner, B.K.

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A dynamic method for the measurement of pyroelectric properties of materials von Ghane-Motlagh, R, Kroener, M, Goldschmidtboeing, F, Danilewsky, A N, Woias, P

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Influence of doping and non-stoichiometry on the quality of lead iodide for use in X-ray detection von Matuchova, M., Zdansky, K., Zavadil, J., Tonn, J., Abdul-Gader Jafar, Mousa M., Danilewsky, A.N., Cröll, A., Maixner, J.

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Small-angle subgrain boundaries emanating from dislocation pile-ups in multicrystalline silicon studied with synchrotron white-beam X-ray topography von Oriwol, D., Carl, E.-R., Danilewsky, A.N., Sylla, L., Seifert, W., Kittler, M., Leipner, H.S.

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White beam topography of 300 mm Si wafers von Danilewsky, A. N., Wittge, J., Rack, A., Weitkamp, T., Simon, R., Baumbach, T., McNally, P.

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Combined use of three-dimensional X-ray diffraction imaging and micro-Raman spectroscopy for the non-destructive evaluation of plasma arc induced damage on silicon wafers von Stopford, J., Allen, D., Aldrian, O., Morshed, M., Wittge, J., Danilewsky, A.N., McNally, P.J.

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The micro-imaging station of the TopoTomo beamline at the ANKA synchrotron light source von Rack, A., Weitkamp, T., Bauer Trabelsi, S., Modregger, P., Cecilia, A., dos Santos Rolo, T., Rack, T., Haas, D., Simon, R., Heldele, R., Schulz, M., Mayzel, B., Danilewsky, A.N., Waterstradt, T., Diete, W., Riesemeier, H., Müller, B.R., Baumbach, T.

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X-ray diffraction imaging for predictive metrology of crack propagation in 450-mm diameter silicon wafers von Tanner, B.K., Wittge, J., Vagovič, P., Baumbach, T., Allen, D., McNally, P.J., Bytheway, R., Jacques, D., Fossati, M.C., Bowen, D.K., Garagorri, J., Elizalde, M.R., Danilewsky, A.N.

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Czochralski growth of lead iodide single crystals: Investigations and comparison with the Bridgman method von Tonn, J., Danilewsky, A.N., Cröll, A., Matuchova, M., Maixner, J.

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Local strain and defects in silicon wafers due to nanoindentation revealed by full-field X-ray microdiffraction imaging von Li, Z. J., Danilewsky, A. N., Helfen, L., Mikulik, P., Haenschke, D., Wittge, J., Allen, D., McNally, P., Baumbach, T.

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Femtosecond versus nanosecond laser micro-machining of InP: a nondestructive three-dimensional analysis of strain von Xu, Lu, Lowney, Donnacha, McNally, Patrick J, Borowiec, A, Lankinen, A, Tuomi, T O, Danilewsky, A N

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Dislocation analysis for heat-exchanger method grown sapphire with white beam synchrotron X-ray topography von Chen, W.M., McNally, P.J., Shvyd’ko, Yu.V., Tuomi, T., Danilewsky, A.N., Lerche, M.

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Floating-zone and floating-solution-zone growth of GaSb under microgravity von Cröll, A, Kaiser, Th, Schweizer, M, Danilewsky, A.N, Lauer, S, Tegetmeier, A, Benz, K.W

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Synchrotron White-Beam X-Ray Topography Analysis of the Defect Structure of HVPE-GaN Substrates von Kirste, L., Danilewsky, A. N., Sochacki, T., Köhler, K., Zajac, M., Kucharski, R., Boćkowski, M., McNally, P. J.

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Macrosegregation in the growth of doped III-V-semiconductors from the solution von Danilewsky, A. N., Meinhardt, J.

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