Correlated Three-Dimensional Imaging of Dislocations: Insights into the Onset of Thermal Slip in Semiconductor Wafers von Hänschke, D, Danilewsky, A, Helfen, L, Hamann, E, Baumbach, T

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A dynamic method for the measurement of pyroelectric properties of materials von Ghane-Motlagh, R, Kroener, M, Goldschmidtboeing, F, Danilewsky, A N, Woias, P

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Nondestructive X‐ray diffraction measurement of warpage in silicon dies embedded in integrated circuit packages von Tanner, B. K., Danilewsky, A. N., Vijayaraghavan, R. K., Cowley, A., McNally, P. J.

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Effect of surfactants on the growth and characterization of triglycine sulfate crystals von Ghane-Motlagh, R., Fammels, J., Danilewsky, A.N., Pelz, U., Woias, P.

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Small-angle subgrain boundaries emanating from dislocation pile-ups in multicrystalline silicon studied with synchrotron white-beam X-ray topography von Oriwol, D., Carl, E.-R., Danilewsky, A.N., Sylla, L., Seifert, W., Kittler, M., Leipner, H.S.

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Threading dislocations in n- and p-type 4H–SiC material analyzed by etching and synchrotron X-ray topography von Kallinger, B., Polster, S., Berwian, P., Friedrich, J., Müller, G., Danilewsky, A.N., Wehrhahn, A., Weber, A.-D.

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The micro-imaging station of the TopoTomo beamline at the ANKA synchrotron light source von Rack, A., Weitkamp, T., Bauer Trabelsi, S., Modregger, P., Cecilia, A., dos Santos Rolo, T., Rack, T., Haas, D., Simon, R., Heldele, R., Schulz, M., Mayzel, B., Danilewsky, A.N., Waterstradt, T., Diete, W., Riesemeier, H., Müller, B.R., Baumbach, T.

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Three-dimensional imaging of dislocations by X-ray diffraction laminography von Haenschke, D, Helfen, L, Altapova, V, Danilewsky, A, Baumbach, T

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Czochralski growth of lead iodide single crystals: Investigations and comparison with the Bridgman method von Tonn, J., Danilewsky, A.N., Cröll, A., Matuchova, M., Maixner, J.

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The geometry of catastrophic fracture during high temperature processing of silicon von Tanner, B. K., Garagorri, J., Gorostegui-Colinas, E., Elizalde, M. R., Bytheway, R., McNally, P. J., Danilewsky, A. N.

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Dislocation dynamics and slip band formation in silicon: In-situ study by X-ray diffraction imaging von Danilewsky, A.N., Wittge, J., Croell, A., Allen, D., McNally, P., Vagovič, P., dos Santos Rolo, T., Li, Z., Baumbach, T., Gorostegui-Colinas, E., Garagorri, J., Elizalde, M.R., Fossati, M.C., Bowen, D.K., Tanner, B.K.

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Non-destructive laboratory-based X-ray diffraction mapping of warpage in Si die embedded in IC packages von Wong, C.S., Bennett, N.S., Manessis, D., Danilewsky, A., McNally, P.J.

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Local strain and defects in silicon wafers due to nanoindentation revealed by full-field X-ray microdiffraction imaging von Li, Z. J., Danilewsky, A. N., Helfen, L., Mikulik, P., Haenschke, D., Wittge, J., Allen, D., McNally, P., Baumbach, T.

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Influence of doping and non-stoichiometry on the quality of lead iodide for use in X-ray detection von Matuchova, M., Zdansky, K., Zavadil, J., Tonn, J., Abdul-Gader Jafar, Mousa M., Danilewsky, A.N., Cröll, A., Maixner, J.

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Dislocation sources and slip band nucleation from indents on silicon wafers von Wittge, J., Danilewsky, A. N., Allen, D., McNally, P., Li, Z., Baumbach, T., Gorostegui-Colinas, E., Garagorri, J., Elizalde, M. R., Jacques, D., Fossati, M. C., Bowen, D. K., Tanner, B. K.

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Phase equilibria, crystal growth and characterization of the novel ferroelectric tungsten bronzes CaxBa1-xNb2O6 (CBN) and CaxSryBa1-x-yNb2O6 (CSBN) von MUEHLBERG, M, BURIANEK, M, JOSCHKO, B, KLIMM, D, DANILEWSKY, A, GELISSEN, M, BAYARJARGAL, L, GÖRLER, G. P, HILDMANN, B. O

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Combined use of three-dimensional X-ray diffraction imaging and micro-Raman spectroscopy for the non-destructive evaluation of plasma arc induced damage on silicon wafers von Stopford, J., Allen, D., Aldrian, O., Morshed, M., Wittge, J., Danilewsky, A.N., McNally, P.J.

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B-Spline X-Ray Diffraction Imaging — Rapid non-destructive measurement of die warpage in ball grid array packages von Cowley, A., Ivankovic, A., Wong, C.S., Bennett, N.S., Danilewsky, A.N., Gonzalez, M., Cherman, V., Vandevelde, B., De Wolf, I., McNally, P.J.

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X-ray diffraction imaging for predictive metrology of crack propagation in 450-mm diameter silicon wafers von Tanner, B.K., Wittge, J., Vagovič, P., Baumbach, T., Allen, D., McNally, P.J., Bytheway, R., Jacques, D., Fossati, M.C., Bowen, D.K., Garagorri, J., Elizalde, M.R., Danilewsky, A.N.

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White beam topography of 300 mm Si wafers von Danilewsky, A. N., Wittge, J., Rack, A., Weitkamp, T., Simon, R., Baumbach, T., McNally, P.

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