High-temperature ultrafast polariton parametric amplification in semiconductor microcavities von Saba, M., Ciuti, C., Bloch, J., Thierry-Mieg, V., André, R., Dang, Le Si, Kundermann, S., Mura, A., Bongiovanni, G., Staehli, J. L., Deveaud, B.

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Experimental evidence for nonequilibrium Bose condensation of exciton polaritons von RICHARD, M, KASPRZAK, J, ANDRE, R, ROMESTAIN, R, LE SI DANG, MALPUECH, G, KAVOKIN, A

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Spontaneous coherent phase transition of polaritons in CdTe microcavities von RICHARD, Maxime, KASPRZAK, Jacek, ROMESTAIN, Robert, ANDRE, Régis, LE SI DANG

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Stimulation of Polariton Photoluminescence in Semiconductor Microcavity von Dang, Le Si, Heger, D., André, R., Bœuf, F., Romestain, R.

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Direct comparison of recombination dynamics in cubic and hexagonal GaN/AlN quantum dots von Simon, J., Pelekanos, N. T., Adelmann, C., Martinez-Guerrero, E., André, R., Daudin, B., Dang, Le Si, Mariette, H.

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Surfactant effect of In for AlGaN growth by plasma-assisted molecular beam epitaxy von Monroy, E., Daudin, B., Bellet-Amalric, E., Gogneau, N., Jalabert, D., Enjalbert, F., Brault, J., Barjon, J., Dang, Le Si

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Molecular-beam epitaxial growth and characterization of quaternary III–nitride compounds von Monroy, E., Gogneau, N., Enjalbert, F., Fossard, F., Jalabert, D., Bellet-Amalric, E., Dang, Le Si, Daudin, B.

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GaN quantum dots doped with Eu von Hori, Y., Biquard, X., Monroy, E., Jalabert, D., Enjalbert, F., Dang, Le Si, Tanaka, M., Oda, O., Daudin, B.

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Consequences of strong coupling between excitons and microcavity leaky modes von Richard, Maxime, Romestain, Robert, André, Régis, Dang, Le Si

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GaN quantum dots doped with Tb von Hori, Y., Andreev, T., Jalabert, D., Monroy, E., Dang, Le Si, Daudin, B., Tanaka, M., Oda, O.

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Polariton parametric amplifier pump dynamics in the coherent regime von Huynh, A, Tignon, J, Larsson, O, Roussignol, Ph, Delalande, C, André, R, Romestain, R, Le Si Dang

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Optical and morphological properties of GaN quantum dots doped with Tm von ANDREEV, T, HORI, Y, BIQUARD, X, MONROY, E, JALABERT, D, FARCHI, A, TANAKA, M, ODA, O, DANG, Le Si, DAUDIN, B

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In incorporation during the growth of quaternary III-nitride compounds by plasma-assisted molecular beam epitaxy von Monroy, E., Gogneau, N., Jalabert, D., Bellet-Amalric, E., Hori, Y., Enjalbert, F., Dang, Le Si, Daudin, B.

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Study of isolated cubic GaN quantum dots by low-temperature cathodoluminescence von Garayt, J.P., Gérard, J.M., Enjalbert, F., Ferlazzo, L., Founta, S., Martinez-Guerrero, E., Rol, F., Araujo, D., Cox, R., Daudin, B., Gayral, B., Si Dang, Le, Mariette, H.

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High-reflectivity GaN/GaAlN Bragg mirrors at blue/green wavelengths grown by molecular beam epitaxy von Langer, R., Barski, A., Simon, J., Pelekanos, N. T., Konovalov, O., André, R., Dang, Le Si

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Control of the two-dimensional–three-dimensional transition of self-organized CdSe/ZnSe quantum dots von Robin, I C, André, R, Mariette, H, Tatarenko, S, Dang, Le Si, Bleuse, J, Bellet-Amalric, E, Gérard, J M

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Optical characteristics of hexagonal GaN self-assembled quantum dots: Strong influence of built-in electric field and carrier localization von Cho, Yong-Hoon, Kwon, B. J., Barjon, J., Brault, J., Daudin, B., Mariette, H., Dang, Le Si

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Low-temperature refractive indices of Cd1−xMnxTe and Cd1−yMgyTe von André, R., Dang, Le Si

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Collision broadening in II-VI semiconductor microcavities von Huynh, A., Tignon, J., Keller, G., Roussignol, Ph, Delalande, C., André, R., Romestain, R., Dang, Le Si

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Stimulated scattering and its dynamics in semiconductor microcavities at 80 K under nonresonant excitation conditions von Alexandrou, A., Bianchi, G., Péronne, E., Hallé, B., Boeuf, F., André, R., Romestain, R., Si Dang, Le

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