Polarization‐Resolved p‐Se/n‐WS2 Heterojunctions toward Application in Microcomputer System as Multivalued Signal Trigger von Li, Ling, Gao, Ge, Liu, Xueting, Sun, Yiming, Lei, Jianpeng, Chen, Zecheng, Dan, Zhiying, Gao, Wei, Zheng, Tao, Wang, Xiaozhou, Huo, Nengjie, Li, Jingbo

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Vertically stacked Bi2Se3/MoTe2 heterostructure with large band offsets for nanoelectronics von Tao, Lin, Yao, Bin, Yue, Qian, Dan, Zhiying, Wen, Peiting, Yang, Mengmeng, Zheng, Zhaoqiang, Luo, Dongxiang, Fan, Weijun, Wang, Xiaozhou, Gao, Wei

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Improved performance of Cd-free CZTS thin-film solar cells by using CZTS0.4Se0.6 BSF layer von Zhang, Wenchao, You, Chengwu, Dan, Zhiying, Wang, Weizhe, Dong, Ruibing

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Polarity‐Switchable and Self‐Driven Photo‐Response Based on Vertically Stacked Type‐III GeSe/SnS2 Heterojunction von Wu, Liangwei, Gao, Wei, Sun, Yiming, Yang, MengMeng, Zheng, Zhaoqiang, Fan, Weijun, Shu, Kaixiang, Dan, Zhiying, Zhang, Nan, Huo, Nengjie, Li, Jingbo

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Thermally Oxidized Memristor and 1T1R Integration for Selector Function and Low‐Power Memory von Pan, Zhidong, Zhang, Jielian, Liu, Xueting, Zhao, Lei, Ma, Jingyi, Luo, Chunlai, Sun, Yiming, Dan, Zhiying, Gao, Wei, Lu, Xubing, Li, Jingbo, Huo, Nengjie

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Improved photodetection performance enabled by gradient alloyed quantum dots von Dan, Zhiying, Wang, Chuanglei, Gao, Wei, Shu, Kaixiang, Wu, Liangwei, Wang, Weizhe, Zhao, Qixiao, Liu, Xiaojing, Liu, Xiao, Huo, Nengjie, Li, Jingbo

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Multifunctional GeAs/WS2 Heterojunctions for Highly Polarization-Sensitive Photodetectors in the Short-Wave Infrared Range von Xiong, Jingxian, Dan, Zhiying, Li, Hengyi, Li, Sina, Sun, Yiming, Gao, Wei, Huo, Nengjie, Li, Jingbo

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Type-II Bi2O2Se/MoTe2 van der Waals Heterostructure Photodetectors with High Gate-Modulation Photovoltaic Performance von Dan, Zhiying, Yang, Baoxiang, Song, Qiqi, Chen, Jianru, Li, Hengyi, Gao, Wei, Huang, Le, Zhang, Menglong, Yang, Mengmeng, Zheng, Zhaoqiang, Huo, Nengjie, Han, Lixiang, Li, Jingbo

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Improved performance of Cd-free CZTS thin-film solar cells by using CZTS 0.4 Se 0.6 BSF layer von Zhang, Wenchao, You, Chengwu, Dan, Zhiying, Wang, Weizhe, Dong, Ruibing

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Dual-Junction Photovoltaic Detectors for Performance Improvement von Meng, Xuefeng, Yue, Wenbo, Xiong, Jingxian, Wang, Hanyu, Zhang, Yuhang, Dan, Zhiying, Yang, Yujue, Li, Jingbo, Huo, Nengjie

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Multifunctional GeAs/WS 2 Heterojunctions for Highly Polarization-Sensitive Photodetectors in the Short-Wave Infrared Range von Xiong, Jingxian, Dan, Zhiying, Li, Hengyi, Li, Sina, Sun, Yiming, Gao, Wei, Huo, Nengjie, Li, Jingbo

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Type-II Bi 2 O 2 Se/MoTe 2 van der Waals Heterostructure Photodetectors with High Gate-Modulation Photovoltaic Performance von Dan, Zhiying, Yang, Baoxiang, Song, Qiqi, Chen, Jianru, Li, Hengyi, Gao, Wei, Huang, Le, Zhang, Menglong, Yang, Mengmeng, Zheng, Zhaoqiang, Huo, Nengjie, Han, Lixiang, Li, Jingbo

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Polarization‐Resolved p‐Se/n‐WS 2 Heterojunctions toward Application in Microcomputer System as Multivalued Signal Trigger von Li, Ling, Gao, Ge, Liu, Xueting, Sun, Yiming, Lei, Jianpeng, Chen, Zecheng, Dan, Zhiying, Gao, Wei, Zheng, Tao, Wang, Xiaozhou, Huo, Nengjie, Li, Jingbo

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Vertically stacked Bi 2 Se 3 /MoTe 2 heterostructure with large band offsets for nanoelectronics von Tao, Lin, Yao, Bin, Yue, Qian, Dan, Zhiying, Wen, Peiting, Yang, Mengmeng, Zheng, Zhaoqiang, Luo, Dongxiang, Fan, Weijun, Wang, Xiaozhou, Gao, Wei

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Vertically stacked BiSe/MoTe heterostructure with large band offsets for nanoelectronics von Tao, Lin, Yao, Bin, Yue, Qian, Dan, Zhiying, Wen, Peiting, Yang, Mengmeng, Zheng, Zhaoqiang, Luo, Dongxiang, Fan, Weijun, Wang, Xiaozhou, Gao, Wei

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Type II Homo-Type Bi2O2Se Nanosheet/InSe Nanoflake Heterostructures for Self-Driven Broadband Visible–Near-Infrared Photodetectors von Zhang, Zhiyang, Han, Lixiang, Dan, Zhiying, Li, Hengyi, Yang, Mengmeng, Sun, Yiming, Zheng, Zhaoqiang, Huo, Nengjie, Luo, Dongxiang, Gao, Wei, Li, Jingbo

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High-Performance Broadband Photodetectors Based on n‑MoS2/p-Ge0.9Sn0.1 Heterojunctions von Shu, Kaixiang, Gao, Wei, Wan, Fengshuo, Yang, Shuhui, Dan, Zhiying, Wu, Liangwei, Zhao, Qixiao, Xue, Chunlai, Huo, Nengjie, Li, Jingbo

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Polarity‐Switchable and Self‐Driven Photo‐Response Based on Vertically Stacked Type‐III GeSe/SnS 2 Heterojunction von Wu, Liangwei, Gao, Wei, Sun, Yiming, Yang, MengMeng, Zheng, Zhaoqiang, Fan, Weijun, Shu, Kaixiang, Dan, Zhiying, Zhang, Nan, Huo, Nengjie, Li, Jingbo

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Type II Homo-Type Bi 2 O 2 Se Nanosheet/InSe Nanoflake Heterostructures for Self-Driven Broadband Visible–Near-Infrared Photodetectors von Zhang, Zhiyang, Han, Lixiang, Dan, Zhiying, Li, Hengyi, Yang, Mengmeng, Sun, Yiming, Zheng, Zhaoqiang, Huo, Nengjie, Luo, Dongxiang, Gao, Wei, Li, Jingbo

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High-Performance Broadband Photodetectors Based on n -MoS 2 /p-Ge 0.9 Sn 0.1 Heterojunctions von Shu, Kaixiang, Gao, Wei, Wan, Fengshuo, Yang, Shuhui, Dan, Zhiying, Wu, Liangwei, Zhao, Qixiao, Xue, Chunlai, Huo, Nengjie, Li, Jingbo

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