Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys von Elbaz, Anas, Buca, Dan, von den Driesch, Nils, Pantzas, Konstantinos, Patriarche, Gilles, Zerounian, Nicolas, Herth, Etienne, Checoury, Xavier, Sauvage, Sébastien, Sagnes, Isabelle, Foti, Antonino, Ossikovski, Razvigor, Hartmann, Jean-Michel, Boeuf, Frédéric, Ikonic, Zoran, Boucaud, Philippe, Grützmacher, Detlev, El Kurdi, Moustafa

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Impact of tensile strain on low Sn content GeSn lasing von Rainko, Denis, Ikonic, Zoran, Elbaz, Anas, von den Driesch, Nils, Stange, Daniela, Herth, Etienne, Boucaud, Philippe, El Kurdi, Moustafa, Grützmacher, Detlev, Buca, Dan

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Tailoring Mechanically Tunable Strain Fields in Graphene von Goldsche, Matthias, Sonntag, Jens, Khodkov, Tymofiy, Verbiest, Gerard Jan, Reichardt, Sven, Neumann, Christoph, Ouaj, Taoufiq, von den Driesch, Nils, Buca, Dan, Stampfer, Christoph

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Investigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures von Rainko, Denis, Ikonic, Zoran, Vukmirović, Nenad, Stange, Daniela, von den Driesch, Nils, Grützmacher, Detlev, Buca, Dan

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Compositional dependence of the band-gap of Ge1−x−ySixSny alloys von Wendav Torsten, Fischer, Inga A, Montanari, Michele, Zoellner, Marvin Hartwig, Klesse, Wolfgang, von den Driesch Nils, Oehme, Michael, Buca Dan, Schulze Jörg

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Optically Pumped GeSn Microdisk Lasers on Si von Stange, Daniela, Wirths, Stephan, Geiger, Richard, Schulte-Braucks, Christian, Marzban, Bahareh, von den Driesch, Nils, Mussler, Gregor, Zabel, Thomas, Stoica, Toma, Hartmann, Jean-Michel, Mantl, Siegfried, Ikonic, Zoran, Grützmacher, Detlev, Sigg, Hans, Witzens, Jeremy, Buca, Dan

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Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductors von Seidel, Lukas, Liu, Teren, Concepción, Omar, Marzban, Bahareh, Kiyek, Vivien, Spirito, Davide, Schwarz, Daniel, Benkhelifa, Aimen, Schulze, Jörg, Ikonic, Zoran, Hartmann, Jean-Michel, Chelnokov, Alexei, Witzens, Jeremy, Capellini, Giovanni, Oehme, Michael, Grützmacher, Detlev, Buca, Dan

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Schottky barrier tuning via dopant segregation in NiGeSn-GeSn contacts von Schulte-Braucks, Christian, Hofmann, Emily, Glass, Stefan, von den Driesch, Nils, Mussler, Gregor, Breuer, Uwe, Hartmann, Jean-Michel, Zaumseil, Peter, Schröder, Thomas, Zhao, Qing-Tai, Mantl, Siegfried, Buca, Dan

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Short-wave infrared LEDs from GeSn/SiGeSn multiple quantum wells von Stange, Daniela, von den Driesch, Nils, Rainko, Denis, Roesgaard, Søren, Povstugar, Ivan, Hartmann, Jean-Michel, Stoica, T., Ikonic, Zoran, Mantl, Siegfried, Grützmacher, Detlev, Buca, Dan

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SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters von von den Driesch, Nils, Stange, Daniela, Wirths, Stephan, Rainko, Denis, Povstugar, Ivan, Savenko, Aleksei, Breuer, Uwe, Geiger, Richard, Sigg, Hans, Ikonic, Zoran, Hartmann, Jean‐Michel, Grützmacher, Detlev, Mantl, Siegfried, Buca, Dan

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GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers von Stange, Daniela, von den Driesch, Nils, Zabel, Thomas, Armand-Pilon, Francesco, Rainko, Denis, Marzban, Bahareh, Zaumseil, Peter, Hartmann, Jean-Michel, Ikonic, Zoran, Capellini, Giovanni, Mantl, Siegfried, Sigg, Hans, Witzens, Jeremy, Grützmacher, Detlev, Buca, Dan

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In situ TEM heating experiments on thin epitaxial GeSn layers: Modes of phase separation von Martínez, Karí, Minenkov, Alexey, Aberl, Johannes, Buca, Dan, Brehm, Moritz, Groiss, Heiko

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Epitaxial GeSn: impact of process conditions on material quality von Loo, Roger, Shimura, Yosuke, Ike, Shinichi, Vohra, Anurag, Stoica, Toma, Stange, Daniela, Buca, Dan, Kohen, David, Margetis, Joe, Tolle, John

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Advanced GeSn/SiGeSn Group IV Heterostructure Lasers von von den Driesch, Nils, Stange, Daniela, Rainko, Denis, Povstugar, Ivan, Zaumseil, Peter, Capellini, Giovanni, Schröder, Thomas, Denneulin, Thibaud, Ikonic, Zoran, Hartmann, Jean‐Michel, Sigg, Hans, Mantl, Siegfried, Grützmacher, Detlev, Buca, Dan

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Extreme IR absorption in group IV-SiGeSn core-shell nanowires von Attiaoui, Anis, Wirth, Stephan, Blanchard-Dionne, André-Pierre, Meunier, Michel, Hartmann, J. M., Buca, Dan, Moutanabbir, Oussama

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Fabrication, Characterization, and Analysis of Ge/GeSn Heterojunction p-Type Tunnel Transistors von Schulte-Braucks, Christian, Pandey, Rahul, Sajjad, Redwan Noor, Barth, Mike, Ghosh, Ram Krishna, Grisafe, Ben, Sharma, Pankaj, von den Driesch, Nils, Vohra, Anurag, Rayner, Gilbert Bruce, Loo, Roger, Mantl, Siegfried, Buca, Dan, Chih-Chieh Yeh, Cheng-Hsien Wu, Tsai, Wilman, Antoniadis, Dimitri A., Datta, Suman

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Enhanced Device Performance with Vertical SiC Gate-All-Around Nanowire Power MOSFETs von Wirths, Stephan, Han, Yi, Yang, Dong, Buca, Dan Mihai, Zhao, Qing Tai, Knoll, Lars

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Thermoelectric Efficiency of Epitaxial GeSn Alloys for Integrated Si-Based Applications: Assessing the Lattice Thermal Conductivity by Raman Thermometry von Spirito, Davide, von den Driesch, Nils, Manganelli, Costanza Lucia, Zoellner, Marvin Hartwig, Corley-Wiciak, Agnieszka Anna, Ikonic, Zoran, Stoica, Toma, Grützmacher, Detlev, Buca, Dan, Capellini, Giovanni

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Formation and optoelectronic property of strain-relaxed Ge1−x−y Si x Sn y /Ge1−x Sn x /Ge1−x−y Si x Sn y double heterostructures on a boron-ion-implanted Ge(001) substrate... von Fukuda, Masahiro, Rainko, Denis, Sakashita, Mitsuo, Kurosawa, Masashi, Buca, Dan, Nakatsuka, Osamu, Zaima, Shigeaki

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High‑k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors von Wirths, Stephan, Stange, Daniela, Pampillón, Maria-Angela, Tiedemann, Andreas T, Mussler, Gregor, Fox, Alfred, Breuer, Uwe, Baert, Bruno, San Andrés, Enrique, Nguyen, Ngoc D, Hartmann, Jean-Michel, Ikonic, Zoran, Mantl, Siegfried, Buca, Dan

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