VISIBLE PHOTOLUMINESCENCE FROM ANNEALED POROUS SiOx FILMS von Indutnyy, I Z, Maidanchuk, I Yu, Min'ko, V I, Shepeliavyi, P E, Dan'ko, V A

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Photoinduced etching of thin films of chalcogenide glassy semiconductors von Dan’ko, V. A., Indutnyi, I. Z., Min’ko, V. I., Shepelyavyi, P. E., Bereznyova, O. V., Lytvyn, O. S.

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Mechanism of Tin-Induced Crystallization in Amorphous Silicon von Neimash, V.B., Goushcha, A.O., Shepeliavyi, P.E., Yukhymchuk, V.O., Dan’ko, V.A., Melnyk, V.V., Kuzmich, A.G.

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Fabrication of submicrometer periodic structures using Interference lithography and two-layer chalcogenide photoresist von Indutnyi, I Z, Popescu, M, Lorinczi, A, Sava, F, Mn'ko, V I, Shepeliavyi, P E, Dan'ko, V A

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Control of plasmons excitation by P- and S-polarized light in gold nanowire gratings by azimuthal angle variation von Dan'ko, V. A.

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Effect of chemical treatment on photoluminescence spectra of SiO x layers with built-in Si nanocrystals von Indutnyy, I. Z., Maĭdanchuk, I. Yu, Min’ko, V. I., Shepelyavyĭ, P. E., Dan’ko, V. A.

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Nanopatterning Au chips for SPR refractometer by using interference lithography and chalcogenide photoresist von Dan’ko, V. A.

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Visible photoluminescence of selectively etched porous nc-Si-Siox structures von Indutnyi, I. Z., Michailovska, E. V., Shepeliavyi, P. E., Dan’ko, V. A.

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Interference photolithography with the use of resists on the basis of chalcogenide glassy semiconductors von Dan’ko, V. A., Indutnyi, I. Z., Min’ko, V. I., Shepelyavyi, P. E.

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Investigation of thermal sensitivity and radiation resistance of SiOx metal-dielectric films von Shepeliavyi, P E, Indutnyi, I Z, Dan'ko, V A, Neimash, V B, Povarchuk, VYu

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Investigation of thermal sensitivity and radiation resistance of SiOx〈Ti〉 metal-dielectric films von Shepeliavyi, P.E., Indutnyi, I.Z., Dan’ko, V.A., Neimash, V.B., Povarchuk, V.Yu

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Photostimulated etching of germanium chalcogenide films von Dan’ko, V. A.

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Nickel-induced enhancement of photoluminescence in nc-Si-SiOx nanostructures von Michailovska, K.V.

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Controlling the photoluminescence spectra of porous nc-Si–SiOx structures by vapor treatment von Dan’ko, V. A.

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Doping the thin films by using the original Close Space Sublimation method von Khomchenko, V.S., Sopinskyy, M.V., Dan'ko, V.A., Olkhovik, G.P.

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Overexpressed pp60c-src can induce focus formation without complete transformation of NIH 3T3 cells von JOHNSON, P. J, COUSSENS, P. M, DANKO, A. V, SHALLOWAY, D

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Visible photoluminescence of selectively etched porous nc-Si-Sio{sub x} structures von Indutnyi, I. Z., Michailovska, E. V., Shepeliavyi, P. E., Dan'ko, V. A.

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Photodoping in As2S3-Ag structures von INDUTNYI, I. Z, DAN'KO, V. A, KUDRYAVTSEV, A. A, MICHAILOVSKAYA, E. V, MIN'KO, V. I

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Influence of Trap States on the Kinetics of Luminescence and Induced Light Absorption by Si Nanoparticles in a SiO2 Matrix at Their Excitation with Femtosecond Laser Pulses von Kadan, V.M., Indutnyi, I.Z., Dan’ko, V.A., Shepelyavyi, P.E., Dmitruk, I.M., Korenyuk, P.I., Blonsky, I.V.

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Effect of chemical treatment on photoluminescence spectra of SiO{sub x} layers with built-in Si nanocrystals von Indutnyy, I. Z., Maidanchuk, I. Yu, Min'ko, V. I., Shepelyavyi, P. E., Dan'ko, V. A.

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