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    In situ nanoscale refinement by highly controllable etching of the (111) silicon crystal plane and its influence on the enhanced electrical property of a silicon nanowire

    In situ nanoscale refinement by highly controllable etching of the (111) silicon crystal plane and its influence on the enhanced electrical property of a silicon nanowire von Gong, Yibin (宜彬龚), Dai, Pengfei (鹏飞戴), Gao, Anran (安然高), Li, Tie (铁李), Zhou, Ping (萍周), Wang, Yuelin (跃林王)

    Veröffentlicht in Journal of semiconductors

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