Effect of growth temperature of an AlN intermediate layer on the growth mode of AlN grown by MOCVD von Tian, W, Yan, W Y, Dai, J N, Li, S L, Tian, Y, Hui, Xiong, Zhang, J B, Fang, Y Y, Wu, Z H, Chen, C Q

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Effects of Al0.3Ga0.7As interlayer with pulsed atomic layer epitaxy on heterogeneous integration of GaAs/Ge grown by MOCVD von Sun, S.C., Qi, Z.Q., Chen, H.Q., Huang, X.H., Tian, W., Wu, F., Wu, Z.H., Dai, J.N., Chen, C.Q.

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MOCVD growth of ZnO films on Si(1 1 1) substrate using a thin AlN buffer layer von Wang, L., Pu, Y., Chen, Y.F., Mo, C.L., Fang, W.Q., Xiong, C.B., Dai, J.N., Jiang, F.Y.

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Prognostic significance of preoperative radiotherapy in stage II and III rectal cancer patients: A Strobe-compliant study of SEER 18 registries database (1988-2011) von Wang, R, Zhao, D, Liu, Y J, Ye, C, Qian, J R, Dai, J N, Liu, S Y, Liu, J Y, Li, B, Wang, M J, Ping, J

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Comparative Study on MOCVD Growth of a-Plane GaN Films on r-Plane Sapphire Substrates Using GaN, AlGaN, and AlN Buffer Layers von Dai, J. N., Wu, Z. H., Yu, C. H., Zhang, Q., Sun, Y. Q., Xiong, Y. K., Han, X. Y., Tong, L. Z., He, Q. H., Ponce, F. A., Chen, C. Q.

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Double-resonance enhanced intersubband second-order nonlinear optical susceptibilities in GaN/AlGaN step quantum wells von Wu, F, Tian, W, Zhang, J, Wang, S, Wan, Q X, Dai, J N, Wu, Z H, Xu, J T, Li, X Y, Fang, Y Y, Chen, C Q

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Efficient optical coupling in AlGaN/GaN quantum well infrared photodetector via quasi-one-dimensional gold grating von Wang, S, Tian, W, Wu, F, Zhang, J, Dai, J N, Wu, Z H, Fang, Y Y, Tian, Y, Chen, C Q

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Effects of the AlN buffer layer thickness on the properties of ZnO films grown on c-sapphire substrate by pulsed laser deposition von Xiong, H., Dai, J.N., Hui, Xiong, Fang, Y.Y., Tian, W., Fu, D.X., Chen, C.Q., Li, Mingkai, He, Yunbin

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The Effect of AlN Nucleation Temperature on the Growth of AlN Films via Metalorganic Chemical Vapor Deposition von Wang, H., Li, S.L., Xiong, H., Wu, Z.H., Dai, J.N., Tian, Y., Fang, Y.-Y., Chen, C.Q.

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Tunability of intersubband transition wavelength in the atmospheric window in AlGaN/GaN multi-quantum wells grown on different AlGaN templates by metalorganic chemical vapor deposi... von Tian, W., Yan, W. Y., Hui, Xiong, Li, S. L., Ding, Y. Y., Li, Y., Tian, Y., Dai, J. N., Fang, Y. Y., Wu, Z. H., Yu, C. H., Chen, C. Q.

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High quality GaN epilayers grown on Si (111) with thin nonlinearly composition-graded AlxGa1-xN interlayers via metal-organic chemical vapor deposition von XIANG, R. F, FANG, Y.-Y, DAI, J. N, ZHANG, L, SU, C. Y, WU, Z. H, YU, C. H, XIONG, H, CHEN, C. Q, HAO, Y

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Numerical study of the advantages of ultraviolet light-emitting diodes with a single step quantum well as the electron blocking layer von Tian, W., Feng, Z. H., Liu, B., Xiong, H., Zhang, J. B., Dai, J. N., Cai, S. J., Chen, C. Q.

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All-optically controlled one-dimensional photonic crystal of AlGaN film via photorefractive effect von Hui, Xiong, Fang, Y.Y., Wu, Z.H., Dai, J.N., Tian, Wu, Chen, C.Q.

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Strong enhancement of terahertz response in GaAs/AlGaAs quantum well photodetector by magnetic field von Yu, C. H., Zhang, B., Lu, W., Shen, S. C., Liu, H. C., Fang, Y.-Y., Dai, J. N., Chen, C. Q.

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Prognostic value of diffuse high-risk plaque in patients with acute myocardial infarction: a three-vessel optical coherence tomography study von Fang, C, Zhao, J W, Chen, Y Z, Cui, L N, Guo, J Q, Wang, Y N, Hou, J B, Dai, J N, Yu, B

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Growth of non-polar ZnO films on a-GaN/r-Al2O3 templates by radio-frequency magnetron sputtering von DAI, J. N, HAN, X. Y, WU, Z. H, YU, C. H, XIANG, R. F, HE, Q. H, GAO, Y. H, CHEN, C. Q, XIAO, X. H, PENG, T. C

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Effects of Growth Temperature on Properties of Nonpolar a-Plane ZnO Films on GaN Templates by Pulsed Laser Deposition von Dai, J. N., Han, X. Y., Wu, Z. H., Fang, Y. Y., Xiong, H., Tian, Y., Yu, C. H., He, Q. H., Chen, C. Q.

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The effects of growth temperature of AlN buffer layers on a-plane GaN grown on r-plane sapphire by MOCVD von Sun, Y Q, Wu, Z H, Yin, J, Fang, Y Y, Wang, H, Dai, J N, Zhang, J, Yu, C H, Feng, C, Chen, C Q

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The effects of V/III ratio on nonpolar a-plane GaN films grown on r-plane sapphire by MOCVD von Yin, J, Wu, Z H, Sun, Y Q, Fang, Y Y, Wang, H, Feng, C, Zhang, J, Dai, J N, Chen, C Q

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Terahertz intersubband transition in GaN/AlGaN step quantum well von Wu, F., Tian, W., Yan, W. Y., Zhang, J., Sun, S. C., Dai, J. N., Fang, Y. Y., Wu, Z. H., Chen, C. Q.

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