Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers von Cheng, Kai, Leys, M., Degroote, S., Van Daele, B., Boeykens, S., Derluyn, J., Germain, M., Van Tendeloo, G., Engelen, J., Borghs, G.

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The role of Al on Ohmic contact formation on n -type GaN and AlGaN ∕ GaN von Van Daele, B., Van Tendeloo, G., Ruythooren, W., Derluyn, J., Leys, M. R., Germain, M.

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Formation of metallic In in InGaN∕GaN multiquantum wells von Daele, B. Van, Tendeloo, G. Van, Jacobs, K., Moerman, I., Leys, M. R.

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Effective Work-Function Modulation by Aluminum-Ion Implantation for Metal-Gate Technology (\hbox) von Singanamalla, R., Yu, H.Y., Van Daele, B., Kubicek, S., De Meyer, K.

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SP-0093 ETHICAL VALUES IN MANAGING A DEPARTMENT von Van Daele, B, Haustermans, K

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CdSe quantum dot formation: alternative paths to relaxation of a strained CdSe layer and influence of the capping conditions von Robin, I C, Aichele, T, Bougerol, C, André, R, Tatarenko, S, Bellet-Amalric, E, Van Daele, B, Van Tendeloo, G

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Cesium near-surface concentration in low energy, negative mode dynamic SIMS von Berghmans, B., Van Daele, B., Geenen, L., Conard, T., Franquet, A., Vandervorst, W.

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Ripple morphologies on ion irradiated Si1−xGex von Sarkar, S., Van Daele, B., Vandervorst, W.

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Formation of germanium shallow junction by flash annealing von Satta, A., D’Amore, A., Simoen, E., Anwand, W., Skorupa, W., Clarysse, T., Van Daele, B., Janssens, T.

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Mechanism for Ohmic contact formation on Si3N4 passivated AlGaN∕GaN high-electron-mobility transistors von Van Daele, B., Van Tendeloo, G., Derluyn, J., Shrivastava, P., Lorenz, A., Leys, M. R., Germain, M.

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Low temperature epitaxy and the importance of moisture control von Leys, F.E., Hikavyy, A., Machkaoutsan, V., De Vos, B., Geenen, L., Van Daele, B., Loo, R., Caymax, M.

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Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures von Jacobs, K., Daele, B.Van, Leys, M.R., Moerman, I., Tendeloo, G.Van

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Engineering of an insulating buffer and use of AlN interlayers: two optimisations for AlGaN-GaN HEMT-like structures von Bougrioua, Z., Moerman, I., Nistor, L., Van Daele, B., Monroy, E., Palacios, T., Calle, F., Leroux, M.

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Single crystalline GaN grown on porous Si(111) by MOVPE von Cheng, Kai, Degroote, S., Leys, M., Van Daele, B., Germain, M., Van Tendeloo, G., Borghs, G.

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Observation of cyclotron resonance in an InAs/GaAs wetting layer with shallowly formed quantum dots von Janssen, G., Goovaerts, E., Bouwen, A., Partoens, B., Van Daele, B., Žurauskienė, N., Koenraad, P. M., Wolter, J. H.

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Impact of Fluorine co-implant on Boron Diffusion during Non-melt Laser Annealing von Noda, T, Felch, S, Parihar, V, Vrancken, C, Janssens, T, Bender, H, Van Daele, B, Vandervorst, W

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Morphology of CdSe/ZnSe quantum dots grown by MBE von Bougerol, C., André, R., Robin, I. C., Gilles, B., van Daele, B., van Tendeloo, G.

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Ripple morphologies on ion irradiated Si 1− x Ge x von Sarkar, S., Van Daele, B., Vandervorst, W.

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Investigation of AlN nucleation layers for AlGaN/GaN heterostructures on 4H-SiC von Boeykens, S., Leys, M. R., Germain, M., Cheng, K., Derluyn, J., Van Daele, B., Van Tendeloo, G., Belmans, R., Borghs, G.

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Relation between Microstructure and 2DEG Properties of AlGaN/GaN Structures von Van Daele, B., Van Tendeloo, G., Germain, M., Leys, M., Bougrioua, Z., Moerman, I.

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